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31.75 Datasheet PDF File

For 31.75 Found Datasheets File :: 65014 Search Time::2.141ms
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				International Rectifier
Part No.	IRF1405
OCR Text	...Units C/W www.irf.com 1 3/25/01 IRF1405 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/T...175 C 1 10 100 1 0.1 10 0.1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Vol...
Description	Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A? Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?) Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A) Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=169A)
File Size	114.28K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF1407L IRF1407S IRF1407STRR
OCR Text	...0 seconds Max. 100V 70V 520 3.8 200 1.3 20 390 See Fig.12a, 12b, 15, 16 4.6 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient(PCB Mou...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?) Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A) Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A) TRANSISTOR \| MOSFET \| N-CHANNEL \| 75V V(BR)DSS \| 100A I(D) \| TO-263AB 晶体管\| MOSFET的\| N沟道\| 75V的五（巴西）直\| 100号A（丁）\|63AB
File Size	158.12K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1407
OCR Text	...S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 78A, VGS = 0VT --- 110 170 ns TJ = 25C, IF = 78A --- 390 590 nC di/dt = 100A/s T Intrinsi...175 TC , Case Temperature ( C) Fig 9. Maximum Drain Current vs. Case Temperature 10% VGS...
Description	Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A? Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?) POWER MOSFET(VDSS=75V, RDS(ON)=0.0078OHM, ID=130Aㄌ) Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A) Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)
File Size	126.10K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1607
OCR Text	...S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 85A, VGS = 0V --- 130 200 ns TJ = 25C, IF = 85A --- 690 1040 nC di/dt = 100A/s Intrinsi...175 C 1 10 100 VDS, Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. T...
Description	Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)
File Size	179.50K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1704
OCR Text	...srew Max. 170 120 680 230 1.3 20 670 100 23 1.9 -55 to + 200 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V mJ A mJ V/ns C C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased ...
Description	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A) POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?) Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)
File Size	100.05K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF2204
OCR Text	... Features RDS(on) = 3.6m ID = 210A Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFE...175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V mJ A mJ C Thermal Resistance P...
Description	40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package AUTOMOTIVE MOSFET
File Size	138.67K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2804S-7P
OCR Text	...ther applications. S (Pin 2, 3 ,5,6,7) G (Pin 1) Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C ID @ TC = 25C IDM...175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A c Maximum Power Dissipation Linear D...
Description	AUTOMOTIVE MOSFET
File Size	260.32K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2804 IRF2804L IRF2804S
OCR Text	...40 5350 1520 2210 --- --- 2.0 2.3 4.0 --- 20 250 200 -200 240 62 99 --- --- --- --- --- --- --- --- --- --- --- --- pF nH ns nC nA V S A V m...175 T C , Case Temperature (C) RDS(on) , Drain-to-Source On Resistance ID = 75A VGS = 10V 1...
Description	40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	273.77K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2805L IRF2805S
OCR Text	...nds Max. 135V 96V 700 200 1.3 20 380 1220 See Fig.12a, 12b, 15, 16 2.0 -55 to + 175 300 (1.6mm from case ) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient(PCB Mounted, s...
Description	55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET
File Size	221.43K / 11 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text	...tput Characteristics 1000 3.0 ID = 71A RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.5 TJ = 25 C TJ = 175 C 2.0 100 1.5 1.0 0.5 10 4.0 V DS = 25V 20...
Description	HEXFET Power MOSFET HEXFET功率MOSFET 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
File Size	122.50K / 10 Page	View it Online	Download Datasheet

For 31.75 Found Datasheets File :: 65014 Search Time::2.141ms
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