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Part No. |
JANS3SF2 JANS3SF6
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OCR Text |
... features revision: september , 2010 quick reference datav r = 50 - 600v i f = 4.5a t rr = 150 - 400ns i r = 1.0 a u v ery low reverse recovery time u hermetically sealed non-cavity construction. u low switching losses u lo... |
Description |
4.5 A, 200 V, SILICON, RECTIFIER DIODE 4.5 A, 600 V, SILICON, RECTIFIER DIODE
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File Size |
129.71K /
5 Page |
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TOSHIBA
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Part No. |
TPCP8008-H
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OCR Text |
2010-03-09 1 toshiba field effect transistor silicon n-channel mos type (u-mos -h) tpcp8008-h high-efficiency dc-dc converter applications notebook pc applications portable equipment applications ? small footprint due to a s... |
Description |
Power MOSFET (N-ch single VDSS≤30V)
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File Size |
203.82K /
7 Page |
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it Online |
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TOSHIBA
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Part No. |
TPCA8A04-H
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OCR Text |
2010-01-19 1 toshiba field effect transistor wi th built-in scho ttky barrier diode silicon n-channel mos type (u-mos v-h) tpca8a04-h high efficiency dc-dc converter applications notebook pc applications portable equipment applica... |
Description |
Power MOSFET (N-ch single VDSS≤30V)
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File Size |
216.05K /
8 Page |
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it Online |
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TOSHIBA
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Part No. |
TPCA8A02-H
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OCR Text |
2010-01-19 1 toshiba field effect transistor wi th built-in scho ttky barrier diode silicon n-channel mos type (u-mos v-h) tpca8a02-h high efficiency dc-dc converter applications notebook pc applications portable equipment applica... |
Description |
Power MOSFET (N-ch single VDSS≤30V)
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File Size |
223.73K /
8 Page |
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it Online |
Download Datasheet
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Price and Availability
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