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  150c Datasheet PDF File

For 150c Found Datasheets File :: 101724    Search Time::5.281ms    
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    AON6710

Alpha & Omega Semiconductors
Part No. AON6710
OCR Text ...sipation PD is based on TJ(MAX)=150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsink is used. C: Repetitive rating, pulse width limited by junction te...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 182.50K  /  5 Page

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    IRFP21N60L IRFP21N60LPBF SIHFP21N60L SIHFP21N60L-E3

Vishay Siliconix
Part No. IRFP21N60L IRFP21N60LPBF SIHFP21N60L SIHFP21N60L-E3
OCR Text ...0 100 10 BOTTOM T J = 150c 10 1 1 0.1 T J = 25C 0.1 5.5V 0.01 20s PULSE WIDTH Tj = 25C 0.001 0.1 1 10 100 1000 0.01 4 6 8 VDS = 50V 20s PULSE WIDTH 10 12 14 16 VDS, Drain-to-Source Voltage (V) VGS ,...
Description Power MOSFET

File Size 158.46K  /  8 Page

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    IRFP22N60K IRFP22N60KPBF SIHFP22N60K SIHFP22N60K-E3

Vishay Siliconix
Part No. IRFP22N60K IRFP22N60KPBF SIHFP22N60K SIHFP22N60K-E3
OCR Text ...-to-Source Current (A) T J = 150c 10.00 1 1.00 0.1 T J = 25C 5.0V 0.01 0.10 20s PULSE WIDTH Tj = 25C 0.001 0.1 1 10 100 0.01 5.0 6.0 7.0 VDS = 50V 20s PULSE WIDTH 8.0 9.0 10.0 VDS, Drain-to-Source Voltag...
Description Power MOSFET

File Size 146.50K  /  8 Page

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    Alpha & Omega Semiconductor
Part No. AOB15S65L
OCR Text ...tice. i d =250a, v gs =0v, t j =150c bv dss electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions v gs =10v, v ds =400v, i d =7.5a, r g =25 turn-off fall time total gate charge v gs =10v, v ds ...
Description Single HV MOSFETs (500V - 1000V)

File Size 478.47K  /  7 Page

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    IRFP26N60LPBF

International Rectifier
Part No. IRFP26N60LPBF
OCR Text .../dt 480A/s, VDD V(BR)DSS, TJ 150c. Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V DSS . Coss eff.(ER) is a fixed capacitance that st...
Description HEXFET Power MOSFET ( VDSS = 600V , RDS(on)typ. = 210mΩ , Trr typ. = 170ns , ID = 26A )
HEXFET Power MOSFET ( VDSS = 600V , RDS(on)typ. = 210mヘ , Trr typ. = 170ns , ID = 26A )

File Size 200.75K  /  9 Page

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    IRFR430A SIHFR430A SIHFR430A-E3 IRFR430APBF SIHFR430AT SIHFR430AT-E3 SIHFR430ATL SIHFR430ATL-E3 IRFR430ATR SIHFR430ATR S

Vishay Siliconix
Part No. IRFR430A SIHFR430A SIHFR430A-E3 IRFR430APBF SIHFR430AT SIHFR430AT-E3 SIHFR430ATL SIHFR430ATL-E3 IRFR430ATR SIHFR430ATR SIHFR430ATR-E3 IRFR430ATRL IRFR430ATRLPBF IRFR430ATRPBF IRFR430ATRR IRFR430ATRRPBF IRFU430A SIHFU430A SIHFU430A-E3 IRFU430APBF
OCR Text ...e Current (A) 10.00 T J = 150c 1 1.00 0.1 4.5V 0.01 0.10 T J = 25C VDS = 100V 20s PULSE WIDTH 4.0 6.0 8.0 10.0 12.0 14.0 16.0 20s PULSE WIDTH Tj = 25C 0.001 0.1 1 10 100 0.01 VDS, Drain-to-Source Voltage (V...
Description Power MOSFET

File Size 154.70K  /  8 Page

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    Alpha & Omega Semiconductor
Part No. AOB11S65
OCR Text ... dss v gs =10v, i d =5.5a, t j =150c v gs =10v, i d =5.5a, t j =25c v ds =5v,i d =250 a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions a v ds =0v, v gs =30v bv dss v drain-source breakd...
Description Single HV MOSFETs (500V - 1000V)

File Size 310.66K  /  7 Page

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    ISL6719 ISL6719ARZ

Intersil, Corp.
Intersil Corporation
Part No. ISL6719 ISL6719ARZ
OCR Text ...S ENABLE + BG + GND COMPA TMON +150c TRIP +95C CLEAR INT. BIAS COMPB VPWR OK TEMP OK VSW INT. BIAS + _ 1.5V REF VSW_FB AUXIN + - 2 START/STOP UV COMPARATOR POR + BG FN6555.1 October 1, 2007 ISL6719 ENABLE INT-ENABLE ENABLE_...
Description 100V Linear Bias Supply 0.4 A SWITCHING REGULATOR, PDSO9

File Size 168.33K  /  9 Page

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