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MICROSEMI POWER PRODUCTS GROUP
MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM100SKM90G
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| OCR Text |
...S Compliant
G1 OUT S1 CR2
0/VBUS
G1 S1
VBUS
0/VBUS
OUT
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EA...78A Inductive switching @ 125C VGS = 15V VBus = 670V ID = 78A R G =1.2 Inductive switching @ 25C VGS... |
| Description |
30V N-Channel PowerTrench MOSFET
Buck chopper MOSFET Power Module
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| File Size |
269.31K /
6 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BAS78D BAS78 BAS78A BAS78B BAS78C
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| OCR Text |
...eristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time trr , 1 CD 10 -
Unit max. V
typ.
V(BR) 50 100 200 400 VF IR IR...78A...D EHB00047
1200 mA 1000 900 800
F
A 10 0
IF
700 600 500 400 300 200 100 0 0 15 30... |
| Description |
Silicon Switching Diodes
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| File Size |
32.74K /
3 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BAW78D BAW78A BAW78B BAW78C
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| OCR Text |
...eristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time measured at IR = 20mA trr , 1 CD 10 -
Unit max. V
typ.
V(BR) 5...78A...D EHB00095
1200
F
mA
A
10 0
800
IF
600
10 -1
400
10 -2
200
0 ... |
| Description |
Silicon Switching Diodes
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| File Size |
35.76K /
3 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BAW78M
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| OCR Text |
...eristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time trr , 1 s CD 10 pF
Symbol min. V(BR) VF IR IR 400
Values typ. max...78A...D EHB00047
Reverse current IR = f (TA)
VR = 400V
BAS 78A...D EHB00048
10
5
F
... |
| Description |
Silicon Switching Diode
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| File Size |
41.58K /
4 Page |
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it Online |
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Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDD6676AS_NL FDD6676A FDD6676AS FDD6676ASNL
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| OCR Text |
...Body Leakage
(Note 2)
VGS = 0 V, ID = 1 mA ID = 10 mA, Referenced to 25C VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ=125C VGS = 20 V...78A VGS =10V
ID = 39A
1.4
0.016
1.2
0.012
TA = 125 C
o
1
0.8
0.008
TA =25... |
| Description |
30V N-Channel PowerTrench SyncFET
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| File Size |
116.40K /
8 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDD6676S
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| OCR Text |
...tures
* 78 A, 30 V RDS(ON) = 6.0 m @ VGS = 10 V RDS(ON) = 7.1 m @ VGS = 4.5 V
* Low gate charge * Fast Switching * High performance tren...78A VGS =10V
ID = 8.0A 0.016
1.4
1.2
0.012 TA = 125oC 0.008 TA =25oC 0.004
1
0.8
... |
| Description |
30V N-Channel PowerTrench MOSFET
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| File Size |
118.30K /
6 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRG4PSH71KD IRG4PSH71
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| OCR Text |
...10 20 350 140 -55 to +150 300 (0.063 in. (1.6mm) from case)
Units
V
A
s V W
C
Thermal Resistance\ Mechanical
Parameter
RJ...78A IC = 42A, TJ = 150C VCE = VGE, IC = 250A VCE = VGE, IC = 1.5mA VCE = 50V, IC = 42A VGE = 0V, VCE... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A)
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| File Size |
195.78K /
10 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRG4PSH71K IRG4PSH71
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| OCR Text |
...0 170 350 140 -55 to + 150 300 (0.063 in. (1.6mm from case )
Units
V
A s V mJ W
C
Thermal Resistance\ Mechanical
Parameter
RJ...78A See Fig.2, 5 V --- IC = 42A , TJ = 150C 6.0 VCE = VGE, IC = 250A --- mV/C VCE = VGE, IC = 1.5mA ... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A)
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| File Size |
137.57K /
8 Page |
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it Online |
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SIEMENS[Siemens Semiconductor Group]
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| Part No. |
Q62702-A3471 BAW78M
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| OCR Text |
...-
10 1
-
pF ns
VR = 0 V, f = 1 MHz
Reverse recovery time
IF = 200 mA, IR = 200 mA, RL = 100 ,
measured at IR = 20mA
Test...78A...D EHB00047
BAS 78A...D EHB00048
10
5
F
A
nA
R
10 0
10 5
4
max
10 -... |
| Description |
From old datasheet system
Silicon Switching Diode (Switching applications High breakdown voltage)
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| File Size |
31.87K /
4 Page |
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it Online |
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Price and Availability
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