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-17a Datasheet PDF File

For -17a Found Datasheets File :: 1389 Search Time::1.422ms
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				International Rectifier, Corp.
Part No.	IRFZ24V
OCR Text	... = 60v r ds(on) = 60m w i d = 17a s d g to-220ab advanced hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with th...
Description	Power MOSFET(Vdss=60V, Rds(on)=60mohm, Id=17A) 功率MOSFET（减振钢板基本\u003d 60V的，的Rds（on）\u003d 60mohm，身份证\u003d 17A条）
File Size	199.76K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4BC30FD
OCR Text	... = 1.59v @v ge = 15v, i c = 17a parameter min. typ. max. units r q jc junction-to-case - igbt ------ ------ 1.2 r q jc junction-to-case - diode ------ ------ 2.5 c/w r q cs case-to-sink, flat, greased surface ------ 0.50 ...
Description	600V Fast 1-8 kHz Copack IGBT in a TO-220AB package
File Size	422.76K / 10 Page	View it Online	Download Datasheet

				Samtec, Inc.
Part No.	SPW17N80C2
OCR Text	... ar limited by t jmax 1) i d =17a, v dd =50v e ar 0.5 avalanche current, repetitive t ar limited by t j max i ar 17 a reverse diode d v /d t i s =17a, v ds < v dd , d i /d t =100a/s, t jmax =150c d v /d t 6 v/ns gate source volt...
Description	TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 17A I(D) \| TO-247VAR 晶体管\| MOSFET的\| N沟道\| 800V的五（巴西）直\| 17A条（丁）\|47VAR
File Size	140.00K / 11 Page	View it Online	Download Datasheet

				Inchange Semiconductor Company Limited
Part No.	2SC3970 2SC3970A
OCR Text	...tion voltage i c =0.6a; i b =0.17a 1.0 v v besat base-emitter saturation voltage i c =0.6a; i b =0.17a 1.5 v 2sc3970 v cb =800v; i e =0 i cbo collector cut-off current 2sc3970a v cb =900v; i e =0 0.1 ma i ebo emitter c...
Description	Silicon NPN Power Transistors
File Size	62.64K / 4 Page	View it Online	Download Datasheet

				Quanzhou Jinmei Electronic Co.,Ltd.
Part No.	2SC3970 2SC3970A
OCR Text	...tion voltage i c =0.6a; i b =0.17a 1.0 v v besat base-emitter saturation voltage i c =0.6a; i b =0.17a 1.5 v 2sc3970 v cb =800v; i e =0 i cbo collector cut-off current 2sc3970a v cb =900v; i e =0 0.1 ma i ebo emitter c...
Description	Silicon NPN Power Transistors
File Size	64.93K / 4 Page	View it Online	Download Datasheet

				Savantic, Inc.
Part No.	2SC3970 2SC3970A
OCR Text	...ation voltage i c =0.6a; i b =0.17a 1.0 v v besat base-emitter saturation voltage i c =0.6a; i b =0.17a 1.5 v 2sc3970 v cb =800v; i e =0 i cbo collector cut-off current 2sc3970a v cb =900v; i e =0 0.1 ma i ebo emitter cu...
Description	Silicon NPN Power Transistors
File Size	131.47K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFZ24S IRFZ24L
OCR Text	...60V RDS(on) = 0.10 G ID = 17A Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swi...
Description	HEXFET Power MOSFET
File Size	354.95K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFZ24V
OCR Text	...0V RDS(on) = 60m G S ID = 17A Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switch...
Description	Power MOSFET(Vdss=60V, Rds(on)=60mohm, Id=17A)
File Size	146.27K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFZ34E IRFZ34EPBF
OCR Text	...CC CCC 1.3 v t j = 25c, i s = 17a, v gs = 0v ? t rr reverse recovery time CCC 63 95 ns t j = 25c, i f = 17a q rr reverse recovery charge CCC 130 200 nc di/dt = 100a/s ? t on forward turn-on time ? repetitive rating; pulse width li...
Description	60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	127.53K / 8 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
Part No.	M28C17-15BS6 M28C17-15KA6 M28C17-15MS6 M28C17-15NS6 M28C17-15WBS6 M28C17-15WKA6 M28C17-15WMS6 M28C17-15WNS6 M28C17-20BS6 M28C17-20KA6 M28C17-20MS6 M28C17-20NS6 M28C17-20WBS6 M28C17-20WKA6 M28C17-20WMS6 M28C17-20WNS6 M28C17-25BS6 M28C17-25KA6 M28C17-25MS6 M28C17-25NS6 M28C17-25WBS6 M28C17-25WKA6 M28C17-25WMS6 M28C17-25WNS6 M28C17-30BS6 M28C17-30KA6 M28C17-30MS6 M28C17-30NS6 M28C17-30WBS6 M28C17-30WKA6 M28C17-30WMS6 M28C17-30WNS6 M28C17A M28C16-15BS6 M28C16-15KA6 M28C16-15MS6 M28C16-15NS6 M28C16-15WBS6 M28C16-15WKA6 M28C16-15WMS6 M28C16-15WNS6 M28C16-20BS6 M28C16-20KA6 M28C16-20MS6 M28C16-20NS6 M28C16-20WBS6 M28C16-20WKA6 M28C16-20WMS6 M28C16-20WNS6 M28C16-25BS6 M28C16-25KA6 M28C16-25MS6 M28C16-25NS6 M28C16-25WBS6 M28C16-25WKA6 M28C16-25WMS6 M28C16-25WNS6 M28C16-30BS6 M28C16-30KA6 M28C16-30MS6 M28C16-30NS6 M28C16-30WBS6 M28C16-30WKA6 M28C16-30WMS6 M28C16-30WNS6 M28C16A 5190 -M28C16-20WBS6 -M28C16-20WKA6 M28C16A-W M28C17A-W
OCR Text	...ing and Toggle Bit. The M28C16A/17A supports 32 byte page write operation. PIN DESCRITPION Addresses (A0-A10). The address inputs select an 8-bit memory location during a read or write operation. Chip Enable (E). The chip enable input must ...
Description	16K (2K X8) PARALLEL EEPROM From old datasheet system Dual 4-Input Positive-AND Gates 14-PDIP 0 to 70 Dual 4-Input Positive-NAND Gates 14-SO 0 to 70 16 Kbit 2Kb x8 Parallel EEPROM 16千位2KB的x8并行的EEPROM Dual 4-Input Positive-AND Gates 14-SOIC 0 to 70 16千位2KB的x8并行的EEPROM
File Size	132.90K / 19 Page	View it Online	Download Datasheet

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