-0.8a pdf Datasheet P7 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : B89PV UV131 MCS441N RC2200MM ID106 FR302 OM9375SF G1000
	Product Description
	Full Text Search

-0.8a Datasheet PDF File

For -0.8a Found Datasheets File :: 17101 Search Time::1ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2SC4055
OCR Text	... Collector to EmitterV (sus)I = 0.2A Sustaining Voltage CEO C Collector Cutoff Current At rated Voltage I CBO I CEO Emitter Cutoff Current A...8A BE Thermal Resistance AEjcJunction to case Transition Frequency fT V = 10V,0.8A = CE C I Turn on ...
Description	Switching Power Transistor(8A NPN)
File Size	386.37K / 12 Page	View it Online	Download Datasheet

				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2SC4056
OCR Text	...12minute kV Mounting Torque TOR 0.5 Nm oeElectrical Characteristics (Tc=25Z) Item Symbol Conditions Ratings Unit Collector to Emitter Sust...8A Max 1.5 V BE B Thermal Resistance AEjc Junction to case Max 2.77 *Z/W Transition Frequency fT V =...
Description	Switching Power Transistor(8A NPN)
File Size	386.82K / 12 Page	View it Online	Download Datasheet

				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2SC4057
OCR Text	...0 150 600 450 600 7 8 16 4 8 80 0.8 Ratings Min 450 Max 0.1 Max 0.1 Max 0.1 Min 10 Min 5 Max 1.0 Max 1.5 Max 1.56 STD 20 Max 0.5 Max 2.0 Max...8A Junction to case VCE = 10V, IC = 0.8A IC = 4A IB1 = 0.8A, IB2 = 1.6A RL = 37.5, VBB2 = 4V Unit...
Description	Switching Power Transistor(8A NPN)
File Size	510.73K / 12 Page	View it Online	Download Datasheet

				SeCoS Halbleitertechnologie GmbH
Part No.	SSG4935P
OCR Text	...10v -7.8 35@v gs = -4.5v -6.0 maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit ...8a - 28 35 v gs = -4.5v, i d = -6.0a forward transconductance a g fs - 22 - s v ds = -10v, i d...
Description	P-Ch Enhancement Mode Power MOSFET
File Size	462.75K / 4 Page	View it Online	Download Datasheet

				New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conductor P...
Part No.	D45VH4 D45VH1 D45VH10 D45VH7
OCR Text	...1' ^ ? ? mm min 15.70 9.90 4.20 0.70 4.98 2.70 0.44 13.20 1 10 2.70 2.50 1.29 6.45 8.66 max 15.90 10.10 4.40 0.90 j.ou 5.18 2.90 0.46 13.40 ...8a;ib=-0.8a lc=-15a;lb=-3a;tc=100t: ic=-8a;ib=-0.8a ic=-8a;ib=-0.8a;tc=100c vce=ratedvce;vbe(om=-4v ...
Description	Silicon PNP Power Transistors
File Size	74.24K / 2 Page	View it Online	Download Datasheet

				SeCoS Halbleitertechnologie GmbH
Part No.	SSG8N10
OCR Text	... min. max. a 5.80 6.20 h 0.35 0.49 b 4.80 5.00 j 0.375 ref. c 3.80 4.00 k 45 d 0 8 l 1.35 1.75 e 0.40 0.90 ...8a , 100v , r ds(on) 48m n-ch enhancement mode power mosfet 25-apr-2013 rev. a page 2 of ...
Description	N-Ch Enhancement Mode Power MOSFET
File Size	453.31K / 4 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXTT16N10D2 IXTH16N10D2
OCR Text	...stg - 55 ... +175 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-247) ...8a, note 1 64 m i d(on) v gs = 0v, v ds = 25v, note 1 16 a depleti...
Description	Depletion Mode MOSFET Depletion Mode MOSFET
File Size	167.92K / 5 Page	View it Online	Download Datasheet

				Inchange Semiconductor Company Limited
Part No.	2N6371
OCR Text	...emitter sustaining voltage i c =0.2a ;i b =0 40 v v cesat-1 collector-emitter saturation voltage i c =8a ;i b =0.8a 1.5 v v cesat-2 collector-emitter saturation voltage i c =16a; i b =4a 4.0 v v be base-emitter on voltage i...
Description	Silicon NPN Power Transistors
File Size	34.58K / 3 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ530 2SJ530L 2SJ530S
OCR Text	... * Low on-resistance R DS(on) = 0.08 typ. * 4V gate drive devices. * High speed switching. Outline DPAK-2 4 D 4 12 G 3 12...8A, VGS = -10V Note4 I D = -8A, VGS = -4V Note4 I D = -8A, VDS = -10V Note4 VDS = -10V VGS = 0 f = 1...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	56.07K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ541
OCR Text	... * Low on-resistance R DS(on) = 0.075 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220AB D...8A, VGS = -10V Note4 I D = -8A, VGS = -4V Note4 I D = -8A, VDS = -10V Note4 VDS = -10V VGS = 0 f = 1...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	52.02K / 9 Page	View it Online	Download Datasheet

For -0.8a Found Datasheets File :: 17101 Search Time::1ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |