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  vge Datasheet PDF File

For vge Found Datasheets File :: 5672    Search Time::0.781ms    
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    PP225D120

POWEREX[Powerex Power Semiconductors]
Part No. PP225D120
OCR Text ...ce trr Qrr VCC = 600V IC = 225A vge = 15V RG = 4.2 Test Conditions VCE = VCES, vge = 0V IC = 225A, Tj = 25C IC = 225A, Tj = 125C IE = 225A Min Typ 1.8 1.9 3.1 3300 Max 1 2.4 3.2 100 50 400 300 150 Units mA Volts Volts Volts ns ns ns ns ns C...
Description POW-R-PAK 225A / 1200V Half Bridge IGBT Assembly

File Size 360.25K  /  6 Page

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    BSM75GD120DN2 075D12N2 C67070-A2516-A67

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BSM75GD120DN2 075D12N2 C67070-A2516-A67
OCR Text ...6-A67 1200V 103A VCE VCGR vge IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 103 75 TC = 25 C TC = 80 C Pulsed collector current, tp = 1 ms ICpuls 206 150 TC = 25 C TC = 80 C Power dissipation per IGB...
Description IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) 103 A, 1200 V, N-CHANNEL IGBT
From old datasheet system

File Size 185.11K  /  9 Page

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    BUK553-48C

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK553-48C
OCR Text ...DSR 5V ID VDS VGS D.U.T. RG vge Id measure t P,E PDS = ID x VDS E = PDS dt WDSR 0V 0R1 t Fig.17. Inductive clamping test circuit. Fig.18. Typical Inductive Clamping waveforms August 1994 6 Rev 1.000 Phil...
Description PowerMOS transistor Voltage clamped logic level FET

File Size 65.33K  /  9 Page

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    CM100DY-28H

POWEREX[Powerex Power Semiconductors]
Part No. CM100DY-28H
OCR Text ...ration Voltage Symbol ICES IGES vge(th) VCE(sat) QG Test Conditions VCE = VCES, vge = 0V vge = vgeS, VCE = 0V IC = 10mA, VCE = 10V IC = 100A, vge = 15V IC = 100A, vge = 15V, Tj = 125C Total Gate Charge VCC = 800V, IC = 100A, vge = 15V * Pu...
Description Dual IGBTMOD 100 Amperes/1400 Volts

File Size 67.61K  /  4 Page

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    CM150DY-28H

Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Part No. CM150DY-28H
OCR Text ...ration Voltage Symbol ICES IGES vge(th) VCE(sat) QG Test Conditions VCE = VCES, vge = 0V vge = vgeS, VCE = 0V IC = 15mA, VCE = 10V IC = 150A, vge = 15V IC = 150A, vge = 15V, Tj = 125C Total Gate Charge VCC = 800V, IC = 150A, vge = 15V * Pu...
Description Dual IGBTMOD 150 Amperes/1400 Volts

File Size 69.57K  /  4 Page

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    CM200DY-28H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM200DY-28H
OCR Text ...ration Voltage Symbol ICES IGES vge(th) VCE(sat) QG VEC Test Conditions VCE = VCES, vge = 0V vge = vgeS, VCE = 0V IC = 20mA, VCE = 10V IC = 200A, vge = 15V IC = 200A, vge = 15V, Tj = 150C Total Gate Charge Emitter-Collector Voltage VCC = 80...
Description IGBT Modules:1400V
HIGH POWER SWITCHING USE INSULATED TYPE

File Size 49.59K  /  4 Page

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    CM300DY-28H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM300DY-28H
OCR Text ...ration Voltage Symbol ICES IGES vge(th) VCE(sat) QG VEC Test Conditions VCE = VCES, vge = 0V vge = vgeS, VCE = 0V IC = 30mA, VCE = 10V IC = 300A, vge = 15V IC = 300A, vge = 15V, Tj = 150C Total Gate Charge Emitter-Collector Voltage VCC = 80...
Description IGBT Modules:1400V
HIGH POWER SWITCHING USE INSULATED TYPE

File Size 49.35K  /  4 Page

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    CM50DY-28H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM50DY-28H
OCR Text ...ration Voltage Symbol ICES IGES vge(th) VCE(sat) QG VEC Test Conditions VCE = VCES, vge = 0V vge = vgeS, VCE = 0V IC = 5mA, VCE = 10V IC = 50A, vge = 15V IC = 50A, vge = 15V, Tj = 150C Total Gate Charge Emitter-Collector Voltage VCC = 800V,...
Description IGBT Modules:1400V
MEDIUM POWER SWITCHING USE INSULATED TYPE

File Size 48.00K  /  4 Page

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    CM75DY-28H

Mitsubishi Electric Sem...
Powerex Power Semiconductors
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Part No. CM75DY-28H
OCR Text ...ration Voltage Symbol ICES IGES vge(th) VCE(sat) QG VEC Test Conditions VCE = VCES, vge = 0V vge = vgeS, VCE = 0V IC = 7.5mA, VCE = 10V IC = 75A, vge = 15V IC = 75A, vge = 15V, Tj = 150C Total Gate Charge Emitter-Collector Voltage VCC = 800...
Description HIGH POWER SWITCHING USE INSULATED TYPE
IGBT Modules:1400V

File Size 47.54K  /  4 Page

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    IXST35N120B IXSH35N120B

IXYS[IXYS Corporation]
Part No. IXST35N120B IXSH35N120B
OCR Text ...C = 25C TC = 90C TC = 25C, 1 ms vge = 15 V, TJ = 125C, RG = 5 Clamped inductive load Maximum Ratings 1200 1200 20 30 70 35 140 ICM = 90 @ 0.8 VCES 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A A s W C C C C g g TO-247 AD (IXSH) ...
Description IGBT

File Size 81.21K  /  2 Page

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