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  to-247 isowatt218 Datasheet PDF File

For to-247 isowatt218 Found Datasheets File :: 59    Search Time::1.906ms    
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    ST Microelectronics
Part No. STW13NB60
OCR Text to-247/isowatt218 powermesh ? mosfet n typical r ds(on) = 0.48 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description ...
Description N-CHANNEL 600V - 0.48 OHM - 13A - to-247/isowatt218 POWERMESH MOSFET

File Size 320.17K  /  9 Page

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    ST Microelectronics
Part No. W10NC60
OCR Text to-247/isowatt218 powermesh?ii mosfet (1)i sd 10a, di/dt 100a/s, v dd v (br)dss , t j t jmax (*) limited only by maximum temperature allowed n typical r ds (on) = 0.6 w n extremely high dv/dt capability n 100% avalanche tested...
Description Search --To STW10NC60

File Size 261.18K  /  9 Page

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    W7NA80

STMicroelectronics
Part No. W7NA80
OCR Text to source voltage rating n 100% avalanche tested n repetitive avalanche data at 100 o c n low intrinsic capacitances n gate charge minimized...247 isowatt218 1 2 3 1 2 3 1/10 thermal data to-247 isowatt218 r thj-case thermal resistance jun...
Description Search --To STW7NA80

File Size 155.44K  /  10 Page

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    STW8NA80

STMicroelectronics
Part No. STW8NA80
OCR Text to source voltage rating n 100% avalanche tested n repetitive avalanche data at 100 o c n low intrinsic capacitances n gate gharge minimized...247 isowatt218 1 2 3 1 2 3 1/6 thermal data to-247 isowatt218 r thj-case thermal resistance junc...
Description N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

File Size 74.71K  /  6 Page

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    SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STW5NA90 5612 STH5NA90FI
OCR Text ...PICAL RDS(on) = 2.1 30 V GATE-TO-SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC GATE CHARGE MINIMISED REDUCED THRESHOLD VOLTAGE SPREAD to-247 3 2 1 3 2 1 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWI...
Description N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
From old datasheet system

File Size 53.72K  /  6 Page

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    STH8NA80FI STH8NA80 STW8NA80 4873

ST Microelectronics
Advanced Analogic Technologies
STMICROELECTRONICS[STMicroelectronics]
Part No. STH8NA80FI STH8NA80 STW8NA80 4873
OCR Text ...YPICAL RDS(on) = 1.3 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES...247 isowatt218 INTERNAL SCHEMATIC DIAGRAM Valu e STW 8NA80 ST H8NA80FI 800 800 30 o Un...
Description From old datasheet system
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

File Size 47.59K  /  6 Page

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    STMICROELECTRONICS[STMicroelectronics]
Part No. STGW39NC60VD GW39NC60VD
OCR Text to-247 Very Fast PowerMESHTM IGBT TARGET SPECIFICATION Table 1: General Features TYPE STGW39NC60VD Figure 1: Package IC @100C 40 A VCES VCE(sat) (Max) @25C 600V < 2.5 V HIGH CURRENT CAPABILITY HIGH FREQUENCY OPER...
Description N-CHANNEL 40A - 600V - to-247 Very Fast PowerMESH IGBT
N-CHANNEL 40A - 600V - to-247 Very Fast PowerMESH⑩ IGBT

File Size 116.09K  /  10 Page

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    BU941ZP BU941ZPFI BU941ZP08

STMicroelectronics
Part No. BU941ZP BU941ZPFI BU941ZP08
OCR Text ...gedness electronic ignitions to-247 Figure 1. TO-3PF Description The devices are bipolar Darlington transistors manufactured using Multi-Epitaxial Planar technology. They have been properly designed to be used in Automotive enviro...
Description High voltage ignition coil driver NPN power Darlington transistors

File Size 459.17K  /  11 Page

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    New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
Part No. STW8NA80 STH8NA80FI
OCR Text ...ical rds(0n) = 1.3 q + 30v gate to source voltage rating 100% avalanche tested repetitive avalanche data at 100c low intrinsic capacitances ...247 isowatt218 internal schematic diagram q(2) symbol vds vdgr vgs id id idm(') plot v,so tstg t, pa...
Description N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

File Size 130.14K  /  3 Page

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