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  rg-188 Datasheet PDF File

For rg-188 Found Datasheets File :: 529    Search Time::1.406ms    
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    47CTQ020-1 47CTQ020S 47CTQ020 47CTQ020-1PBF 47CTQ020STRR 47CTQ020STRL

Vishay Semiconductors
IRF[International Rectifier]
Part No. 47CTQ020-1 47CTQ020S 47CTQ020 47CTQ020-1PBF 47CTQ020STRR 47CTQ020STRL
OCR Text ... d = 25 V olt DUT IRFP460 Rg = 25 ohm + C URRENT M ON ITO R Fig. 8 - Unclamped Inductive Test Circuit (2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (I F(AV) / D) (see Fig. 6); Pd...
Description 20V 40A Schottky Common Cathode Diode in a D2-Pak package
20V 40A Schottky Common Cathode Diode in a TO-262 package
SCHOTTKY RECTIFIER 40 Amp

File Size 127.13K  /  7 Page

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    STS2DNF30L

STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. STS2DNF30L
OCR Text ... Conditions ID = 1 A VDD = 15 V RG = 4.7 VGS = 4.5 V (Resistive Load, Figure 3) VDD= 24V ID= 2A VGS= 10V Min. Typ. 19 20 4.5 1.7 0.9 Max. U...188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX...
Description N-CHANNEL 30V - 0.09 ohm - 3A SO-8 STripFETPOWER MOSFET N沟道30V 0.09欧姆-A的SO - 8 STripFET⑩功率MOSFET
Dual N-channel 30V - 0.09ohm - 3A SO-8 STripFET TM Power MOSFET
N-CHANNEL 30V - 0.09 OHM - 3A SO-8 STRIPFET POWER MOSFET
N-CHANNEL 30V - 0.09 OHM - 3A SO-8 STRIPFET POWER MOSFET

File Size 266.83K  /  8 Page

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    FQB47P06 FQI47P06 FQB47P06TMAM002 FQI47P06TU

Fairchild Semiconductor Corporation
Part No. FQB47P06 FQI47P06 FQB47P06TMAM002 FQI47P06TU
OCR Text ...) VDD = -30 V, ID = -23.5 A, RG = 25 (Note 4, 5) -------- 50 450 100 195 84 18 44 110 910 210 400 110 --- ns ns ns ns nC nC...188 -4.0 --- A A V ns C Notes: 1. Repetitive Rating : Pulse width limited by maximum junction ...
Description 60V P-Channel MOSFET
60V P-Channel QFET

File Size 717.54K  /  9 Page

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    FQP47P06

FAIRCHILD[Fairchild Semiconductor]
Part No. FQP47P06
OCR Text ...) VDD = -30 V, ID = -23.5 A, RG = 25 (Note 4, 5) -------- 50 450 100 195 84 18 44 110 910 210 400 110 --- ns ns ns ns nC nC...188 -4.0 --- A A V ns C Notes: 1. Repetitive Rating : Pulse width limited by maximum junction ...
Description    60V P-Channel MOSFET

File Size 712.73K  /  8 Page

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    IRFZ46NL IRFZ46NS IRFZ46NSTRR IRFZ46NSTRL

IRF[International Rectifier]
Part No. IRFZ46NL IRFZ46NS IRFZ46NSTRR IRFZ46NSTRL
OCR Text ...nd 13 VDD = 28V ID = 28A ns RG = 12 RD = 0.98, See Fig. 10 Between lead, nH 7.5 and center of die contact 1696 VGS = 0V 407 pF VDS =...188) 1.40 (.055) 1.14 (.045) 3X 5.08 (.200) 1.39 (.055) 1.14 (.045) 2.79 (.110) 2.29 (.090) 2.61 (.1...
Description    HEXFET POWER MOSFET
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package

File Size 251.37K  /  10 Page

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    IRGS14C40L IRGB14C40L IRGSL14C40L

IRF[International Rectifier]
Part No. IRGS14C40L IRGB14C40L IRGSL14C40L
OCR Text ... or IRGS14C40LTRL. Condition RG = 1K ohm VGE = 5V VGE = 5V VCES IC @ TC = 25C IC @ TC = 110C IG IGp VGE PD @ TC = 25C TJ TSTG VESD IL ...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) REF. 1.78 (.070) 1.27 (.050) ...
Description 430V Low-Vceon Discrete IGBT in a TO-262 package
430V Low-Vceon Discrete IGBT in a D2-Pak package
430V Low-Vceon Discrete IGBT in a TO-220AB package
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
INSULATED GATE BIPOLAR TRANSISTOR

File Size 154.13K  /  11 Page

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    IRL3102S

International Rectifier
Part No. IRL3102S
OCR Text ...- VDD = 10V --- ID = 35A ns --- RG = 9.0W VGS = 4.5V , --- RD = 0.28W , Between lead, nH 7.5 --- and center of die contact 2500 --- VGS = 0...188) 1.40 (.055) 1.14 (.045) 3X 5.08 (.200) 1.39 (.055) 1.14 (.045) 2.79 (.110) 2.29 (.090) 2.61 (.1...
Description HEXFET? Power MOSFET

File Size 126.03K  /  8 Page

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    LINEAR
Part No. LS5905
OCR Text ...= 20V ID= 30A ID= 30A VGS= 0 RG= 10M NBW= 6Hz ID= 30A f= 10Hz NF en --- -20 1 70 dB nV/Hz CISS CRSS CDD ---- ----...188 (4.78) 0.197 (5.00) S1 D1 SS G1 1 2 3 4 8 7 6 5 G2 SS D2 S2 0.228 (5.79) 0.244 (6...
Description Low Leakage, Low Drift, Monolithic Dual, N-channel JFET

File Size 25.41K  /  2 Page

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    STS2DPFS20V 2DPFS20V

ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STS2DPFS20V 2DPFS20V
OCR Text ... Conditions ID = 1 A VDD = 10 V RG = 4.7 VGS = 4.5 V (Resistive Load, Figure 3) VDD= 10V ID= 2A VGS=4.5V Min. Typ. 38 30 3.5 0.34 0.8 4.7 M...188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX...
Description P-CHANNEL 20V - 0.14 OHM - 2.5A SO-8 2.7V DRIVE STRIPFET II MOSFET PLUS SCHOTTKY DIODE
P-CHANNEL 20V - 0.14 ohm - 2.5A SO-8 2.7V-DRIVE STripFETII MOSFET PLUS SCHOTTKY DIODE
P-CHANNEL 20V - 0.14 OHM - 2.5A SO-8 2.7V DRIVE STRIPFET II MOSFET PLUS SCHOTTKY DIODE
P-CHANNEL 20V - 0.14 ohm - 2.5A SO-8 2.7V-DRIVE STripFET⑩ II MOSFET PLUS SCHOTTKY DIODE
P-CHANNEL 20V - 0.14 ohm - 2.5A SO-8 2.7V-DRIVE STripFET II MOSFET PLUS SCHOTTKY DIODE

File Size 291.93K  /  8 Page

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    IRL3303L IRL3303S IRL3103L

IRF[International Rectifier]
Part No. IRL3303L IRL3303S IRL3103L
OCR Text ... --- VDD = 15V --- ID = 20A --- RG = 6.5 --- RD = 0.7, See Fig. 10 Between lead, 7.5 --- nH and center of die contact 870 --- VGS = 0V 340 ...188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) ...
Description HEXFET? Power MOSFET
HEXFET Power MOSFET

File Size 154.16K  /  10 Page

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For rg-188 Found Datasheets File :: 529    Search Time::1.406ms    
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