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Part No.	MT46H8M16LFCF-75
OCR Text	...arge option is supported ? auto refresh and self refresh modes ? 1.8v lvcmos-compatible inputs ? on-chip temperature sensor to control refre...4 banks) 8m16 ?plastic package ? 60-ball vfbga (lead-free) 8mm x 10mm cf ? timing ? cycle time ? 7.5...
Description	8M X 16 DDR DRAM, 6 ns, PBGA60
File Size	2,731.42K / 66 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HIP4083 HIP4083AB HIP4083AP
OCR Text	...dic basis by initiating a short refresh pulse. In most bridge applications, this will happen automatically every time the lower FETs turn-on...4 VSS 5 AHB 6 AHO 7 AHS 8 GND CAUTION: These devices are sensitive to electrostatic dischar...
Description	80V/ 300mA Three Phase High Side Driver 80V, 300mA Three Phase High Side Driver 30000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN
File Size	69.83K / 10 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HIP4086 HIP4086AB HIP4086AP
OCR Text	...pplies * Programmable Bootstrap refresh Time * Drives 1000pF Load with Typical Rise Time of 20ns and Fall Time of 10ns * DIS (Disable) Overr...4 24 BHO 23 BHS 22 BLO 21 ALO 20 VDD 19 CLO 18 AHS 17 AHO 16 AHB 15 CHS 14 CHO 13 CHB * Switched ...
Description	80V 0.5A Three Phase Driver 80V, 0.5A Three Phase Driver 80V/ 0.5A Three Phase Driver
File Size	74.89K / 9 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-B K4E170411D-F K4E170412D-F K4E170412D-B
OCR Text	...upply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and pac...4,194,304 x4 Cells refresh refresh period cycle Normal L-ver 4K 64ms 128ms RAS CAS W Contro...
Description	4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
File Size	254.50K / 21 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F
OCR Text	...upply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and pac...4,194,304 x 4 Cells Row Decoder Sense Amps & I/O Buffer * Performance Range Speed -50 -60 DQ0 ...
Description	4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
File Size	223.25K / 20 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	HM514400B HM514400BL HM514400C HM514400CL HM514400CLS-6 HM514400CLS-7 HM514400CLS-8 HM514400BLTT-6 HM514400BLTT-7 HM514400BLTT-8 HM514400CLTT-6 HM514400CLTT-7 HM514400CLTT-8
OCR Text	...ast page mode capability * 1024 refresh cycles : 16 ms 1024 refresh cycles : 128 ms (L-version) * 3 variations of refresh -- RAS-only refres...4 I/O1 6 WE 8 A9 5 22 OE A9 10 11 A0 A0 9 A1 10 A2 11 A3 12 VCC 13 18 A8 17 A7 16 A6 15 A5 14 A4 A1 ...
Description	1,048,576-word x 4-bit dynamic random access memory, 80ns 1,048,576-word x 4-bit dynamic random access memory, 60ns 1/048/576-word X 4-bit Dynamic Random Access Memory 1,048,576-word x 4-bit dynamic random access memory, 70ns
File Size	231.12K / 27 Page	View it Online	Download Datasheet

				Hynix
Part No.	HY57V641620LTP HY57V641620STP
OCR Text	...nal four banks operation ? auto refresh and self refresh ? 4096 refresh cycles / 64ms ? programmable burst length and burst type - 1, 2, 4, 8 or full page for sequential burst - 1, 2, 4 or 8 for interleave burst ? programmable cas laten...
Description	Synchronous DRAM Memory 64Mbit
File Size	156.31K / 13 Page	View it Online	Download Datasheet


Part No.	MT41J1G4THD-15 MT41J512M8THD-187E MT41J512M8THD-15
OCR Text	... of 0c to 95c ? 0c to 85c: 8192 refresh cycles in 64ms ? 85c to 95c: 8192 refresh cycles in 32ms notes: 1. cl = cas (read) latency. options marking ? configuration ? 64 meg x 4 x 8 banks x 2 ranks 1g4 ? 32 meg x 8 x 8 banks x 2 ranks 512m8 ...
Description	64M X 4 DDR DRAM, 1.5 ns, PBGA78 32M X 8 DDR DRAM, 1.87 ns, PBGA78 32M X 8 DDR DRAM, 1.5 ns, PBGA78
File Size	455.80K / 14 Page	View it Online	Download Datasheet

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