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  ptot Datasheet PDF File

For ptot Found Datasheets File :: 18243    Search Time::1.515ms    
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    SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BCR135W Q62702-C2287 BCR135WQ62702C2287
OCR Text ...t V VCEO VCBO VEBO Vi(on) IC ptot Tj Tstg Thermal Resistance Junction ambient 1) RthJA RthJS 240 105 K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 ...
Description NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit)
TRANSISTOR DIGITAL SOT323
NPN Silicon Digital Transistor (Switching circuit inverter interface circuit driver circuit)
From old datasheet system
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

File Size 34.81K  /  4 Page

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    NXP Semiconductors N.V.
Part No. BZV55-B75 BZV55-B27 BZV55-B6V8 BZV55-B33
OCR Text ...ion temperature -65 to +175 250 ptot 500 ts storage temperature range -65 to +175 parameter symbol value unit c ma mw c mar - 08 zener current (see table "characteristics") mechanical data weight: approx. 0.05g case: minimelf glass case (so...
Description 75 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE GLASS, MINI MELF-2
27 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE GLASS, MINI MELF-2
6.8 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
33 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

File Size 712.95K  /  6 Page

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    INFINEON[Infineon Technologies AG]
Part No. BF2040R BF2040W BF2040
OCR Text ... Symbol VDS ID IG1/2SM +VG1SE ptot Value 8 20 10 7 200 200 Unit V mA V mW Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS 76 C, BF2040, BF2040R TS ...
Description RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB
Silicon N-Channel MOSFET Tetrode

File Size 259.60K  /  6 Page

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    Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
Part No. BF723 BF721 Q62702-F1309 Q62702-F1239
OCR Text ... 721 VCE0 VCER VCB0 VEB0 IC ICM ptot Tj Tstg - 300 300 5 Values BF 723 250 - 250 5 50 100 1.5 150 Unit V mA W C - 65 ... + 150 87 27 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on...
Description From old datasheet system
PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) 进步党硅高压晶体管在电视机的视频输出级(适合开关电源和高击穿电压)

File Size 130.02K  /  4 Page

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    SPD35N10

INFINEON[Infineon Technologies AG]
Part No. SPD35N10
OCR Text ...TC=25C ID puls EAS dv/dt VGS ptot Tj , Tstg 140 245 6 20 150 -55... +175 55/175/56 mJ kV/s V W C Avalanche energy, single pulse ID =35 A , VDD =25V, RGS =25 Reverse diode dv/dt IS =35A, VDS =80V, di/dt=200A/s, Tjmax =175C G...
Description Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=45mOhm, 35A, NL
SIPMOS Power-Transistor

File Size 477.75K  /  8 Page

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    ST Microelectronics
Part No. TDA7297SA
OCR Text ...urrent (internally limited) 2 a ptot total power dissipation (t case = 70c) 30 w t op operating temperature 0 to 70 c t stg, t j storage and junction temperature -40 to 150 c symbol parameter value unit r th j-case thermal resistance junc...
Description DUAL BRIDGE AMPLIFIER

File Size 521.98K  /  11 Page

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    SDT04S60 SDD04S60 SDP04S60 Q67040-S4368 Q67040-S4369 Q67040-S4445

INFINEON[Infineon Technologies AG]
Part No. SDT04S60 SDD04S60 SDP04S60 Q67040-S4368 Q67040-S4369 Q67040-S4445
OCR Text ....1 IFRM IFMAX i2dt VRRM VRSM ptot Tj , Tstg Non repetitive peak forward current tp=10s, TC=25C i 2t value, TC=25C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25C Operating and storage ...
Description Heat Sink; Package/Case:TO-220; Thermal Resistance:20.3 C/W; Mounting Type:Through Hole; Body Material:Plastic; Color:Black; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Sink Material:Plastic RoHS Compliant: No
Heat Sink; Package/Case:TO-220; Thermal Resistance:20.3 C/W; Mounting Type:Through Hole; Length:18.03mm; Height:12.7mm; Width:25.4mm; Body Material:Plastic; Color:Black; Leaded Process Compatible:Yes RoHS Compliant: Yes
Silicon Carbide Schottky Diodes - 4A diode in TO220-3 package
Silicon Carbide Schottky Diodes - 4A diode in TO252 package
Silicon Carbide Schottky Diodes - 4A diode in TO220-2 package

File Size 268.40K  /  9 Page

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    ST Microelectronics
Part No. TDA7563
OCR Text ... ) 0 10 20 30 40 50 60 70 80 90 ptot (w) 0 10 20 30 40 50 60 70 80 90 n (%) ptot standard mode vs = 14.4 v rl = 4 x 4 ohm f = 1 khz sine n po ( w ) 0.1 1 10 0 10 20 30 40 50 60 70 80 90 ptot (w) 0 10 20 30 40 50 60 70 80 90 n (%) n pto...
Description MULTIFUNCTION QUAD POWER AMPLIFIER WITH BUILT-IN DIAGNOSTICS FEATURES

File Size 246.30K  /  20 Page

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    ST Microelectronics
Part No. TDA7562
OCR Text ... ) 0 10 20 30 40 50 60 70 80 90 ptot (w) 0 10 20 30 40 50 60 70 80 90 n (%) vs = 14.4 v rl = 4 x 4 ohm f = 1 khz sine n ptot figure 11. power dissipation & efficiency vs. output power (4 w , sine) 012345 po ( w ) 5 10 15 20 25 30 35 40 ...
Description MULTIFUNCTION QUAD POWER AMPLIFIER WITH BUILT-IN DIAGNOSTICS FEATURES

File Size 187.98K  /  17 Page

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    BSO4420

INFINEON[Infineon Technologies AG]
Part No. BSO4420
OCR Text ...Symbol ID ID puls EAS dv/dt VGS ptot Tj , Tstg Value 13 52 230 6 20 2.5 -55... +150 55/150/56 Unit A Pulsed drain current TA=25C Avalanche energy, single pulse ID =13 A , VDD=25V, RGS =25 mJ kV/s V W C Reverse diode dv/d...
Description Low Voltage MOSFETs - OptiMOS Small Signal MOSFET, 30V, SO-8, RDSon = 7.8mOhm, 13A, LL
OptiMOS Small-Signal-Transistor

File Size 97.39K  /  8 Page

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For ptot Found Datasheets File :: 18243    Search Time::1.515ms    
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