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2SA2016 F2010 AX787C NTE994M 364709 STP5NB90 G8194 OM8508SC
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    Panasonic
Part No. UN06A08
OCR Text ...taff in advance for information on the following applications:? special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment, life support systems and safety devices) in w...
Description Power Amplifier for Handset (PA)

File Size 1,307.09K  /  14 Page

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    2SA794 2SA794A 2SA0794 2SC1567A 2SA0794A 2SC1567

PANASONIC[Panasonic Semiconductor]
Part No. 2SA794 2SA794A 2SA0794 2SC1567A 2SA0794A 2SC1567
OCR Text ... 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q 90 to 155 R 130 to 220 Note) The part numbers in the parenthesis show conventional part n...
Description Silicon PNP epitaxial planar type

File Size 83.58K  /  4 Page

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    Alpha & Omega Semiconductor
Part No. AON6234
OCR Text on) (at v gs =10v) < 3.4 m r ds(on) (at v gs = 4.5v) < 5.0 m 100% uis tested 100% r g tested symbol v ds drain-source voltage 40 the aon6234 uses trench mosfet technology that is uniquely optimized to provide the most efficien...
Description Single MV MOSFETs (40V - 400V)

File Size 344.13K  /  6 Page

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    Alpha & Omega Semiconductor
Part No. AON6144
OCR Text on) (at v gs =10v) < 2.4m? r ds(on) (at v gs =4.5v) < 3.5m? applications 100% uis tested 100% rg tested ? synchronous rectification for ac-dc/dc-dc conv erter ? motor drive for 12v-24v systems ? oring switches aon6144 dfn...
Description Single MV MOSFETs (40V - 400V)

File Size 319.72K  /  6 Page

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    2SA886 2SA0886

PANASONIC[Panasonic Semiconductor]
Part No. 2SA886 2SA0886
OCR Text ... 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q 80 to 160 R 120 to 220 Note) The part numbers in the parenthesis show conventional part n...
Description Power Device - Power Transistors - Others
Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)

File Size 89.38K  /  5 Page

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    TOSHIBA
Part No. TK3A65DA
OCR Text ...ations ? low drain-source on-resistance: r ds (on) = 2.3 (typ.) ? high forward transfer admittance: |y fs | = 2.2 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 650 v) ? enhancement mode: v th = 2.4 to 4.4 v (...
Description Power MOSFET (N-ch 500V<VDSS≤700V)

File Size 201.17K  /  6 Page

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    IRHMB57Z60

International Rectifier
Part No. IRHMB57Z60
OCR Text ...low-ohmic features: low r ds(on) fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed ceramic eyelets electrically isolate...
Description 30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package

File Size 169.98K  /  8 Page

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    2SB1011 B1011

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1011 B1011
OCR Text ...te) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 16.01.0 1: Emitter 2: Collector 3: Base TO-126B-A1 Package 3.050.1 Publication date: March 2003 SJD00036BED 1 ...
Description 2SB1011
Silicon PNP triple diffusion planar type

File Size 77.42K  /  4 Page

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    RBR2L60ATE25

ROHM
Part No. RBR2L60ATE25
OCR Text ...served. notice precaution on using rohm products 1. our products are designed and manufac tured for application in ordinary elec tronic equipments (such as av equipment, oa equipment, telecommunication equipment, home electroni c a...
Description Schottky Barrier Diode

File Size 240.14K  /  8 Page

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    Alpha & Omega Semiconductor
Part No. AOTF288L
OCR Text ...at v gs =10v) 46a / 43a r ds(on) (at v gs =10v) < 9.2m (< 8.9m *) r ds(on) (at v gs =6v) <12.5m (< 12.2m *) 100% uis tested 100% r g tested symbol v ds v gs 80v aot288l/aob288l aotf288l drain-source voltage 80 the aot288l & ao...
Description Single MV MOSFETs (40V - 400V)

File Size 376.85K  /  7 Page

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