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Samsung Semiconductor Co., Ltd.
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| Part No. |
K4F171612D
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| OCR Text |
... lower data out buffer ras ucas lcas w vcc vss dq0 to dq7 a0-a11 (a0 - a9) *1 a0 - a7 (a0 - a9) *1 memory array 1,048,576 x16 cells samsung electronics co., ltd. reserves the right to change products and specifications without notice. 1m x... |
| Description |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode 100万16的CMOS动态随机存储器的快速页面模
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| File Size |
533.20K /
34 Page |
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it Online |
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Integrated Silicon Solution, Inc.
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| Part No. |
IC41LV16100A-50T
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| OCR Text |
...12 gnd i/o11 i/o10 i/o9 i/o8 nc lcas ucas oe a9 a8 a7 a6 a5 a4 gnd pin descriptions a0-a9 address inputs i/o0-15 data inputs/outputs we write enable oe output enable ras row address strobe ucas upper column address strobe lcas lower column ... |
| Description |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 100万166兆）动态与江户页面模式内存
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| File Size |
232.70K /
21 Page |
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it Online |
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Citizen Finetech Miyota
EPCOS AG
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| Part No. |
IC41C16256-35KI IC41LV16256-35T IC41LV16256-35TI IC41C16256-60K
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| OCR Text |
...cas upper column address strobe lcas lower column address strobe vcc power gnd ground nc no connection 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 v cc i/o0 i/o1 i/o2 i/o3 v... |
| Description |
256Kx16 bit Dynamic RAM with EDO Page Mode 256Kx16位动态RAM与江户页面模
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| File Size |
209.97K /
21 Page |
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it Online |
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NEC, Corp.
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| Part No. |
PD4265165
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| OCR Text |
...2
i/o11
i/o10
i/o9
nc
gnd
lcas
ucas
oe
nc
nc
nc
a11
a10
a9
a8
a7
a6
gnd
v cc
i/o1
i/o2
i/o3
i/o4
v cc
i/o5
i/o6
i/o7
i/o8
nc
v cc
we
ras
nc
nc
nc
nc
a0
a1
a2
a3
a4
a5
v cc
50-pin plastic tsop... |
| Description |
64 M-Bit Dynamic Ram(64M 动态存储器) 64 m位动态随机存储器6400动态存储器
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| File Size |
539.70K /
48 Page |
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it Online |
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Citizen Finetech Miyota
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| Part No. |
HY51V65173HGJT
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| OCR Text |
.../ras row address strobe /ucas, /lcas column address strobe /we write enable /oe output enable a0-a11 address inputs a0-a11 refresh address inputs i/o 0- i/o 15 data input / output vcc power (3.3v) vss ground nc no connection 1 vcc 2 io0 3 i... |
| Description |
4Mx16|3.3V|4K|6|FP/EDO DRAM - 64M 4Mx16 | 3.3 | 4K的| 6 |计划生育/ EDO公司的DRAM - 6400
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| File Size |
97.73K /
11 Page |
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Mitsubishi Electric, Corp.
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| Part No. |
M5M44260CJ-7
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| OCR Text |
...capabilities. early-write mode, lcas / ucas and oe to control output buffer impedance 512 refresh cycles every 8.2ms (a 0 ~a 8 ) 512 refresh cycles every 128ms (a 0 ~a 8 ) * byte or word control for read/write operation (2cas, 1w type) * :... |
| Description |
FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM 快速页面模194304位（262144字由16位）动态随机存储器
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| File Size |
287.51K /
29 Page |
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it Online |
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