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Infineon Technologies A...
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| Part No. |
BSV236SP
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| OCR Text |
...=-1.5a - -1.6 - v reverse diode inverse diode continuous forward current i s t a =25c - - -0.11 a inverse diode direct current, pulsed i sm - - -6 inverse diode forward voltage v sd v gs =0, | i f | = | i d | - 0.88 1.3 v reverse recovery ... |
| Description |
OptiMOS -P Small-Signal-Transistor
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| File Size |
79.85K /
8 Page |
 View
it Online |
Download Datasheet
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPD04N50C3
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| OCR Text |
...s otherwise specified Parameter inverse diode continuous forward current inverse diode direct current, pulsed inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of rev... |
| Description |
for lowest Conduction Losses & fastest Switching
Cool MOS Power Transistor
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| File Size |
257.64K /
11 Page |
View
it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPD03N50C3
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| OCR Text |
...s otherwise specified Parameter inverse diode continuous forward current inverse diode direct current, pulsed inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of rev... |
| Description |
for lowest Conduction Losses & fastest Switching
Cool MOS Power Transistor
Cool MOS& Power Transistor
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| File Size |
259.54K /
11 Page |
View
it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPD02N50C3
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| OCR Text |
...s otherwise specified Parameter inverse diode continuous forward current inverse diode direct current, pulsed inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of rev... |
| Description |
for lowest Conduction Losses & fastest Switching
Cool MOS Power Transistor
Cool MOS& Power Transistor
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| File Size |
264.79K /
11 Page |
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it Online |
Download Datasheet |
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Siemens Semiconductor G...
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| Part No. |
BUZ80
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| OCR Text |
...it min. typ. max. reverse diode inverse diode continuous forward current t c = 25 c i s - - 3.1 a inverse diode direct current,pulsed t c = 25 c i sm - - 12.5 inverse diode forward voltage v gs = 0 v, i f = 6.2 a v sd - 1 1.3 v rev... |
| Description |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
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| File Size |
182.33K /
9 Page |
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it Online |
Download Datasheet |
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SEMIKRON[Semikron International]
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| Part No. |
SKM800GA176D
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| OCR Text |
... IGBT Modules
SKM 800GA176D
inverse diode
Characteristics Symbol Conditions IGBT
min.
typ.
max.
Units
Preliminary Data
Features
Typical Applications
inverse diode
Remarks
Thermal characteristics
Mechani... |
| Description |
Trench IGBT Modules
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| File Size |
660.03K /
4 Page |
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it Online |
Download Datasheet |
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SEMIKRON[Semikron International]
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| Part No. |
SKM800GA126D
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| OCR Text |
... IGBT Modules
SKM 800GA126D
inverse diode
Characteristics Symbol Conditions IGBT
min.
typ.
max.
Units
Preliminary Data
Features
Typical Applications
inverse diode
Remarks
Thermal characteristics
Mechani... |
| Description |
Trench IGBT Modules
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| File Size |
603.47K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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