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S0100 PA3034X1 CPC1030 AT89C51 38999 01907 BB130 ON1129
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    2SK3511 2SK3511-S 2SK3511-Z 2SK3511-ZJ

NEC, Corp.
NEC Corp.
Part No. 2SK3511 2SK3511-S 2SK3511-Z 2SK3511-ZJ
OCR Text ...valanche Energy Note2 Note2 ias EAS Notes 1. PW 10 s, Duty cycle 1% 2. Starting Tch = 25C, VDD = 35 V, RG = 25 , VGS = 20 0 V (TO-263, TO-220SMD) THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal...
Description 83 A, 75 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
SWITCHING N-CHANNEL POWER MOSFET 开关N沟道功率MOSFET

File Size 84.09K  /  8 Page

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    2SK3504-01

Fuji Electric
Part No. 2SK3504-01
OCR Text ...ch EAS=f(starting Tch):Vcc=50V ias=7A 200 400 350 150 300 ias=10A EAS [mJ] PD [W] 250 200 150 ias=16A 100 50 100 50 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 Tc [C] starting Tch [C] ...
Description N-CHANNEL SILICON POWER MOSFET

File Size 97.34K  /  4 Page

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    OWT4805-12 OWT4805-12S1 OWT4805-15 OWT4805-15S1 OWT2405-15 OWT1205 OWT1205-12 OWT1205-15 OWT2405-12

POWER-ONE[Power-One]
Part No. OWT4805-12 OWT4805-12S1 OWT4805-15 OWT4805-15S1 OWT2405-15 OWT1205 OWT1205-12 OWT1205-15 OWT2405-12
OCR Text ...LS, QBS, QES, QLS XWS, XWD, XWT ias, LES IAD, ias, LES, SMS ias, LES SMS Encapsulated EWS, IWS, OWS Standard Pin Length is 0.180" (4.6mm) 8 9 1H 1V 2H 2V 3H 3V All Units (Except SMS) All Units (Except SMS) All Units (Except DIP, HLS, HLD, Q...
Description TRIPLE OUTPUT / 25 WATT
TRIPLE OUTPUT, 25 WATT

File Size 252.24K  /  3 Page

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    FDS8874

Fairchild Semiconductor
Part No. FDS8874
OCR Text ... 1: Starting TJ = 25C, L = 1mH, ias = 23A, VDD = 30V, VGS = 10V. 2: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. ...
Description N-Channel PowerTrench MOSFET

File Size 375.11K  /  11 Page

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    SUF2001

AUK corp
Part No. SUF2001
OCR Text ... Symbol VDSS VGSS ID IDP PD ias EAS IAR EAR TJ Tstg Rating N-Ch P-Ch 30 20 5.8 23.2 2.0 5.8 72 5.8 3.4 -5.3 33 -5.3 1.6 -5.3 -21.2 -30 Unit V V A A W A mJ A mJ C Total Power dissipation Avalanche current (Single) Single ...
Description Dual N and P-channel Trench MOSFET

File Size 634.85K  /  13 Page

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    2SK3699-01MR

Fuji Electric
SANYO[Sanyo Semicon Device]
Part No. 2SK3699-01MR
OCR Text ... E(AS)=f(starting Tch):Vcc=90V ias=2A 300 tf 250 10 2 ias=3A EAS [mJ] td(off) 200 ias=3.7A 150 t [ns] td(on) 10 1 100 tr 50 10 0 0 -1 10 10 0 10 1 0 25 50 75 100 125 1...
Description N-CHANNEL SILICON POWER MOSFET

File Size 103.37K  /  4 Page

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ... TJ = 25C, L = 3.1mH RG = 25W, ias = 9.0A. (See Figure 12) ISD 9.0A, di/dt 180A/s, VDD V(BR)DSS, TJ 175C ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended soldering techniques refer to application note #A...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

File Size 174.65K  /  10 Page

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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text ...TIONS Unclamped inductive load, ias = 7.8 A; tp = 300 s; Tj prior to avalanche = 25C; VDD 25 V; RGS = 50 ; VGS = 10 V; refer to fig:14 MIN. MAX. 150 UNIT mJ ias - 17 A August 1999 1 Rev 1.100 Philips Semiconductors ...
Description N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 95.87K  /  7 Page

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    POWER-ONE INC
Part No. CUS1212-1V
OCR Text ... hes, hls, qbs, qes, qls trim 1 ias, les enable 2 iad, ias, les, sms trim and enable 3 ias, les pin length and heatsink options standard pin length is 0.180" (4.6mm) 0.110" (2.8mm) pin length 8 all leaded models 0.150" (3.8mm) pin length 9 ...
Description 1-OUTPUT 1 W DC-DC UNREG PWR SUPPLY MODULE

File Size 73.30K  /  2 Page

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    HMC6187LP4E

Hittite Microwave Corporation
Part No. HMC6187LP4E
OCR Text ...solute maximum ratings drain b ias voltage (vdd1, 2, 3) +5.5v gate b ias voltage (vgg1, 2) -2.5 to 0v gain control voltage (vctrl) -5 to 0v rf p ower i nput ( rfin ) +5 d b m channel temperature 175 c continuous p diss (t = 85 c) ...
Description VARIABLE GAIN AMPLIFIER

File Size 967.27K  /  8 Page

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