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GeneSiC Semiconductor, ...
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| Part No. |
GA10JT06-CAL
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| OCR Text |
...e temperature co-efficient of r ds,on ? suitable for connecting an anti-parallel diode ? advantages applic...spice model parameters this is a secure document. please copy this code from the spice model pdf ... |
| Description |
Normally ?OFF Silicon Carbide Junction Transistor
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| File Size |
371.42K /
6 Page |
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it Online |
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Directed Energy
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| Part No. |
DE475-102N21A
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| OCR Text |
... = 1000 v i d25 = 21 a r ds(on) = 0.52 ? ? ? ? p dhs = 600w symbol test conditions maximum ratings v dss t j = 25c to ...spice model (preliminary) the de-series spice model is illustrated in figure 1. the model is an e... |
| Description |
RF Power MOSFET
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| File Size |
81.18K /
3 Page |
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it Online |
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Vishay Intertechnology,Inc.
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| Part No. |
SUM90P10-19L
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| OCR Text |
...reshold voltage v gs(t h ) v ds = v gs , i d = ? 250 a 1 . 9 v on-state drain current a i d ( on) v ds = ? 5 v, v gs = ...spice device model sum90p10-19l comparison of model wit h measured dat a (t j =2 5 c unless ot ... |
| Description |
P-Channel 100-V (D-S) MOSFET
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| File Size |
184.16K /
3 Page |
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it Online |
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