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  diode-24v Datasheet PDF File

For diode-24v Found Datasheets File :: 6397    Search Time::2.062ms    
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    IRF[International Rectifier]
Part No. IRHNJ58Z30 IRHNJ53Z30 IRHNJ54Z30 IRHNJ57Z30
OCR Text ...petitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight * Cur...24V ,VGS=0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 22A VDS = 15V VDD = 1...
Description 30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
30V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package

File Size 111.04K  /  8 Page

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    IRF[International Rectifier]
Part No. IRHNB8Z60 IRHNB3Z60 IRHNB4Z60 IRHNB7Z60
OCR Text ...petitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weig...24V ,VGS=0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 75A VDS = 15V VDD =15...
Description TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT
RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
30V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package

File Size 116.72K  /  8 Page

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    IRF[International Rectifier]
Part No. IRHNA8Z60 IRHNA3Z60 IRHNA4Z60 IRHNA7Z60
OCR Text ...petitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weig...24V ,VGS=0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 75A VDS = 15V VDD =15...
Description 30V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package
30V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2)

File Size 121.96K  /  8 Page

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    IRF[International Rectifier]
Part No. IRHNA597Z60 IRHNA593Z60
OCR Text ...etitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight * Cu...24V ,VGS=0V VDS = -24V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS = -12V, ID = -56A VDS = -15V VD...
Description RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

File Size 192.52K  /  8 Page

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    IRF[International Rectifier]
Part No. IRHMS597Z60 IRHMS593Z60
OCR Text ...etitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight * Current is lim...24V ,VGS=0V VDS = -24V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS =-12V, ID = -45A VDS = -15V VDD...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

File Size 175.97K  /  8 Page

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    MIC2171WU MIC2171WT MIC217107

Micrel Semiconductor
Part No. MIC2171WU MIC2171WT MIC217107
OCR Text ...saturation the anti-saturation diode (d1) increases the usable duty cycle range of the mic2171 by eliminating the base to collector stored charge which would delay q1?s turnoff. compensation loop stability compensation of the mic2171...
Description 100kHz 2.5A Switching Regulator

File Size 184.40K  /  12 Page

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    IRF[International Rectifier]
Part No. IRHMB58Z60 IRHMB53Z60 IRHMB54Z60 IRHMB57Z60
OCR Text ...etitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight * Current is lim...24V ,VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 45A VDS = 15V VDD =...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)

File Size 169.03K  /  8 Page

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    http://
NAIS[Nais(Matsushita Electric Works)]
NAIS[Matsushita Electric Works(Nais)]
SIEMENS AG
Panasonic, Corp.
Part No. S2EB-L2-6V S2EB-L2-48V S2EB-L2-3V S2EB-48V S2EB-24V S2EB-12 S2EB-12V S2EB-3V S2EB-5V S2EB-6V S2EB-L2-12V S2EB-L2-24V S2EB-L2-5V S4EB-L2-6V S3EB-12V S3EB-24V S3EB-3V S3EB-48V S3EB-5V S3EB-6V S3EB-L2-12V S3EB-L2-24V S3EB-L2-3V S3EB-L2-48V S3EB-L2-5V S3EB-L2-6V S4EB-12V S4EB-24V S4EB-3V S4EB-48V S4EB-5V S4EB-6V S4EB-L2-12V S4EB-L2-24V S4EB-L2-3V S4EB-L2-48V S4EB-L2-5V
OCR Text ...)(at 20C) Release time (without diode)*3 (at nominal voltage)(at 20C) Set time*3 (latching) (at nominal voltage)(at 20C) Reset time*3 (latch...24V SuEB-48V Nominal voltage, V DC 3 5 6 12 24 48 Pick-up voltage, V DC (max.) 2.1 3.5 4.2 8.4 16.8 ...
Description CONN RCPT 11POS .100 SGL STR PCB
4 AMP POLARIZED HIGH DENSITY RELAY WITH HIGH SENSITIVITY 4安培高密度继电器偏振灵敏度高

File Size 83.23K  /  4 Page

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    IRF7201 IRF7201PBF IRF7201TR

International Rectifier
Part No. IRF7201 IRF7201PBF IRF7201TR
OCR Text ...gle Pulse Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. 30 7.3 5.8 58 2.5 1.6 0.02 20 30 70 5...24V, VGS = 0V A 25 VDS = 24V, VGS = 0V, TJ = 125C -100 VGS = -20V nA 100 VGS = 20V 28 ID = 4.6A 3.5 ...
Description Generation V Technology
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 111.54K  /  7 Page

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    IRF9952QPBF10 IRF9952QTRPBF

International Rectifier
Part No. IRF9952QPBF10 IRF9952QTRPBF
OCR Text ...rent Continuous Source Current (Diode Conduction) TA = 25C Maximum Power Dissipation TA = 70C Single Pulse Avalanche Energy Avalanche Curre...24V, VGS = 0V VDS = -24V, V GS = 0V VDS = 24V, V GS = 0V, TJ = 125C VDS = -24V, V GS = 0V, TJ = 125C...
Description HEXFETPOWERMOSFET
Advanced Process Technology

File Size 263.10K  /  10 Page

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For diode-24v Found Datasheets File :: 6397    Search Time::2.062ms    
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