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  dig.storage Datasheet PDF File

For dig.storage Found Datasheets File :: 2342    Search Time::2.359ms    
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    PWB60A

SANREX[SanRex Corporation]
Part No. PWB60A
OCR Text ...mA Tj 25 VD 1 2VDRM dIG/dt 1A/ s 30 30 50 150 125 Recommended Value 2.5 3.9 25 40 Recommended Value 1.5 2.5 15 25 4.7 48 2.7 28 170 N fB g Electrical Characteristics Symbol IDRM IRRM VTM IGT VGT VGD tgt dv dt IH ...
Description THYRISTOR MODULE

File Size 384.09K  /  2 Page

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    PWB80A30 PWB80A40

SANREX[SanRex Corporation]
Part No. PWB80A30 PWB80A40
OCR Text ...mA Tj 25 VD 1 2VDRM dIG/dt 1A/ s 30 30 50 150 125 Recommended Value 2.5 3.9 25 40 Recommended Value 1.5 2.5 15 25 4.7 48 2.7 28 170 N fB g Electrical Characteristics Symbol IDRM IRRM VTM IGT VGT VGD tgt dv dt IH ...
Description THYRISTOR MODULE (NON-ISOLATED TYPE)

File Size 383.23K  /  2 Page

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    TXN112 TXN412 TXN612 TYN0512 TYN1012 TYN112 TYN212 TYN412 TYN812 TXN1012 TXN0512 TXN212 TXN812 TYN612

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
Part No. TXN112 TXN412 TXN612 TYN0512 TYN1012 TYN112 TYN212 TYN412 TYN812 TXN1012 TXN0512 TXN212 TXN812 TYN612
OCR Text ...rrent Gate supply : IG = 100 mA diG/dt = 1 A/s Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter TXN TYN TXN TYN Tc=80C Tc=90C Tc=80C Tc=90C tp=8.3 ms tp=10 ms ...
Description IBM AT-AT NULL MODEM CABL50FT MF 高浪涌能力高通态电流高稳定性和可靠
   HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY

File Size 69.78K  /  5 Page

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    BT258U-800R BT258U-600R BT258U BT258U-500R

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BT258U-800R BT258U-600R BT258U BT258U-500R
OCR Text ...= 10 ms ITM = 10 A; IG = 50 mA; dIG/dt = 50 mA/s -40 MAX. -500R -600R -800R 5001 6001 800 5 8 75 82 28 50 2 5 5 5 0.5 150 1252 UNIT V A A A ...Storage temperature Operating junction temperature 1 Although not recommended, off-state voltages...
Description Thyristors logic level 8 A, 800 V, SCR, TO-251

File Size 50.55K  /  6 Page

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    TXDV408 TXDV608 TXDV808

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
Part No. TXDV408 TXDV608 TXDV808
OCR Text ...urrent Gate supply : IG = 500mA diG/dt = 1A/s tp = 10 ms Repetitive F = 50 Hz Non Repetitive A2s A/s Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from c...
Description    ALTERNISTORS

File Size 302.44K  /  5 Page

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    BTH151S-650R

NXP
Philips Semiconductors
Part No. BTH151S-650R
OCR Text ...= 10 ms ITM = 20 A; IG = 50 mA; dIG/dt = 50 mA/s MIN. -40 MAX. 1 UNIT V A A A A A A2s A/s A V V W W C C 650 7.5 12 ITRM I2t dIT/dt...Storage temperature Operating junction temperature 110 121 60 61 50 2 5 5 5 0.5 150 125 1 Alth...
Description Thyristor High Repetitive Surge

File Size 38.74K  /  6 Page

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    STLC2500

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. STLC2500
OCR Text ... VDD_HV 2 VSS_ANA 1 VSS_DIG A VSS_ANA VSS_ANA ABUS_ QN_IN ABUS_ IP_QP VSS_ ANA VDD_RF ANA_2 VSS_ANA VDD_DIG JTAG_TDO B ANA_3 VDD_HV VSS_ANA VSS_ANA VDD_T VSS_ANA VSS_ANA VDD_DIG JTAG_ NTRST JTAG_TDI C VDD_HV ANA_4 VSS_AN...
Description BLUETOOTH™ SINGLE CHIP
BLUETOOTH?/a> SINGLE CHIP
BLUETOOTH SINGLE CHIP
BLUETOOTH⑩ SINGLE CHIP

File Size 172.56K  /  23 Page

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    TIC236 TIC236D TIC236M TIC236N TIC236S TIC236SERIES

Power Innovations Limited
POINN[Power Innovations Ltd]
Part No. TIC236 TIC236D TIC236M TIC236N TIC236S TIC236SERIES
OCR Text ... = 0.5 IT(RMS)/ms VD = Rated VD diG/dt = 50 mA/s IGT = 50 mA TEST CONDITIONS (see Note 5) IG = 0 TC = 110C TC = 80C IT = 1.4 IT(RMS) TC = 110C 1.2 400 9 100 MIN TYP MAX 80 -80 UNIT mA V/s V/s A/s All voltages are with respect to Main Te...
Description SILICON TRIACS

File Size 103.65K  /  5 Page

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    TIC246 TIC246D TIC246M TIC246N TIC246S

Power Innovations International, Inc.
POINN[Power Innovations Limited]
POINN[Power Innovations Ltd]
Part No. TIC246 TIC246D TIC246M TIC246N TIC246S
OCR Text ... = 0.5 IT(RMS)/ms VD = Rated VD diG/dt = 50 mA/s IGT = 50 mA TEST CONDITIONS (see Note 5) IG = 0 TC = 110C TC = 80C IT = 1.4 IT(RMS) TC = 110C 1.2 400 9 100 MIN TYP MAX 80 -80 UNIT mA V/s V/s A/s All voltages are with respect to Main Te...
Description SILICON TRIACS

File Size 103.64K  /  5 Page

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    TIC253 TIC253D TIC253M TIC253N TIC253S

Power Innovations International, Inc.
Power Innovations Limited
POINN[Power Innovations Ltd]
Part No. TIC253 TIC253D TIC253M TIC253N TIC253S
OCR Text ... = 0.5 IT(RMS)/ms VD = Rated VD diG/dt = 50 mA/s IGT = 50 mA TEST CONDITIONS (see Note 5) IG = 0 TC = 110C TC = 80C IT = 1.4 IT(RMS) TC = 110C MIN TYP 20 -20 450 1 200 MAX UNIT mA V/s V/s A/s All voltages are with respect to Main Termin...
Description SILICON TRIACS

File Size 102.50K  /  5 Page

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For dig.storage Found Datasheets File :: 2342    Search Time::2.359ms    
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