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900-1200 Datasheet PDF File

For 900-1200 Found Datasheets File :: 10640 Search Time::1.688ms
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				IXYS Corporation
Part No.	MIO600-65E11
OCR Text	... C + 0.61 0 0 300 600 IC [A] 900 1200 0 0 10 20 RG [ohm] 30 40 Fig. 7 Typical switching energies per pulse versus collector current 10 VCC = 3600 V RGon = 3.9 ohm RGoff = 2.7 ohm VGE = 15 V Tvj = 125 C L = 280 nH td(on), tr, td(of...
Description	IGBT Module Single switch
File Size	145.22K / 5 Page	View it Online	Download Datasheet

				Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
Part No.	DFM900FXM18-A000
OCR Text	...z RMS Test Conditions Max. 1800 900 1800 270 3700 4 10 Units V A A A2s W kV pC THERMAL AND MECHANICAL RATINGS Internal insulation: Basep...1200 900 600 300 0 0 100 Transient thermal impedance, Zth (j-c) - (C/kW ) 10 0.5 2.0 1....
Description	Fast Recovery Diode Module Preliminary Information
File Size	99.54K / 7 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPP20N60CFD
OCR Text	...ymbol dv/dt di F/dt Value 80 900 Unit V/ns A/s Maximum diode commutation speed V DS = 480 V, ID = 20.7 A, Tj = 125 C Thermal Ch...1200 1400 1100 1000 Tj = 25C 1300 900 800 1200 700 1100 600 500 1000 25 50 75 C T...
Description	for lowest Conduction Losses & fastest Switching Cool MOS Power Transistor Cool MOS⑩ Power Transistor
File Size	164.33K / 12 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SPW20N60CFD
OCR Text	...ymbol dv/dt di F/dt Value 80 900 Unit V/ns A/s Maximum diode commutation speed V DS = 480 V, ID = 20.7 A, Tj = 125 C Thermal Ch...1200 1400 1100 1000 Tj = 25C 1300 900 800 1200 700 1100 600 500 1000 25 50 75 C T...
Description	Cool MOSPower Transistor 酷马鞍山⑩功率晶体管 Cool MOS?/a> Power Transistor Cool MOS Power Transistor Cool MOS⑩ Power Transistor for lowest Conduction Losses & fastest Switching
File Size	161.83K / 12 Page	View it Online	Download Datasheet

				Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
Part No.	DFM900FXM12-A000
OCR Text	...z RMS Test Conditions Max. 1200 900 1800 150 3700 4 10 Units V A A kA2s W kV pC THERMAL AND MECHANICAL RATINGS Internal insulation: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): AlN AlSiC 20mm 10mm 175...
Description	Fast Recovery Diode Module Preliminary Information
File Size	99.41K / 7 Page	View it Online	Download Datasheet

				HuaXinAn Electronics CO.,LTD HuaXinAn Electronics CO.,LT...
Part No.	3R90DF 3R-230 3R-250 3R150DF
OCR Text	... 20 1 3r-300 300 2 0 % < 800 900 > 1 20ka 25ka 20 1 3r-350 350 2 0 % < 900 1000 > 1 20ka 25ka 20 1 3r-400 400 2 0 % < 900 1000 > 1 ...1200 > 1 20ka 25ka 20 1 3r-500 500 2 0 % < 1100 1200 > 1 20ka 25ka 20 1 3r-600 600 2 0 % < 1 2 ...
Description	3-Electrode Gas Discharge Tubes
File Size	172.30K / 2 Page	View it Online	Download Datasheet

				Fuji Electric Eudyna Devices Inc
Part No.	FMM5057X
OCR Text	...0 1500 1400 1300 1200 1100 1000 900 Drain Current [mA] Pin=4dBm Power Added Efficiency vs. Frequency VDD=10V, IDD(DC)=1200mA 32 Power Added Efficiency [%] 28 24 20 16 12 8 4 0 6.3 6.7 7.1 Pin=0dBm Pin=4dBm Pin=8dBm Pin=12dBm P1dB ...
Description	7100 MHz - 8500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER C-Band Power Amplifier MMIC
File Size	617.08K / 14 Page	View it Online	Download Datasheet

				HuaXinAn Electronics CO.,LTD HuaXinAn Electronics CO.,LT... HuaXinAn Electronics CO...
Part No.	3R90 3R90CF 3R150 3R150CF 3R350 3R300 3R300CF
OCR Text	...a 10 1 3r300 300 2 0 % < 800 900 > 1 10ka 15ka 10 1 3r350 350 2 0 % < 900 1000 > 1 10ka 15ka 10 1 3r400 400 2 0 % < 900 1000 > 1 10...1200 > 1 10ka 15ka 10 1 3r500 500 2 0 % < 1100 1200 > 1 10ka 15ka 10 1 3r600 600 2 0 % < 1 2 00...
Description	3-Electrode Gas Discharge Tubes
File Size	166.10K / 2 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SC5179 2SC5179-T2 2SC5179-T1
OCR Text	...0000 600.0000 700.0000 800.0000 900.0000 1000.0000 1100.0000 1200.0000 1300.0000 1400.0000 1500.0000 1600.0000 1700.0000 1800.0000 1900.0000 2000.0000 MAG 0.982 0.983 0.973 0.955 0.946 0.918 0.900 0.873 0.845 0.827 0.799 0.776 0.753 0.718 0...
Description	NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
File Size	55.86K / 12 Page	View it Online	Download Datasheet

				HuaXinAn Electronics CO.,LTD HuaXinAn Electronics CO.,LT... HuaXinAn Electronics CO...
Part No.	3R90FH 3R150F 3R150FH 3R300F 3R350FH
OCR Text	... 10 1 3r300f 300 2 0 % < 800 900 > 1 10ka 15ka 10 1 3r350f 350 2 0 % < 900 1000 > 1 10ka 15ka 10 1 3r400f 400 2 0 % < 900 1000 > 1 ...1200 > 1 10ka 15ka 10 1 3r500f 500 2 0 % < 1100 1200 > 1 10ka 15ka 10 1 3r600f 600 2 0 % < 1 2 ...
Description	3-Electrode Gas Discharge Tubes
File Size	145.94K / 2 Page	View it Online	Download Datasheet

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