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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
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Part No. |
IRFS240B IRFS240BFP001
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OCR Text |
...ol.
Features
* * * * * * 12.8A, 200V, RDS(on) = 0.18 @VGS = 10 V Low gate charge ( typical 45 nC) Low Crss ( typical 45 pF) Fast switchi...18A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% ... |
Description |
200V N-Channel B-FET / Substitute of IRFS240 & IRFS240A 200V N-Channel MOSFET 12.8 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
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File Size |
681.78K /
8 Page |
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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Part No. |
RFP12N06RLE RFP12N06 RFD12N06RLESM RFD12N06RLE
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OCR Text |
... VGS = 10V (Figures 9, 10) ID = 8A, VGS = 5V (Figure 9) ID = 8A, VGS = 4.5V (Figure 9) THERMAL SPECIFICATIONS Thermal Resistance Junction to...18A VGS = 10V, RGS = 24 (Figures 16, 21, 22) VDD = 30V, ID = 8A VGS = 4.5V, RGS = 22 (Figures 15, 21... |
Description |
17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 18 A, 60 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET 17A 60V 0.071 Ohm N-Channel Logic Level UltraFET Power MOSFET
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File Size |
212.88K /
10 Page |
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INFINEON[Infineon Technologies AG]
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Part No. |
IKP06N60T IKA15N60T
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OCR Text |
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0,1 mJ
2A
4A
6A
8A
10A
0,0 mJ
10
30
55
80
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=175C, VCE=400V, VGE=0/15V, RG=23, Dynamic... |
Description |
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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File Size |
356.41K /
13 Page |
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