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INFINEON[Infineon Technologies AG]
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| Part No. |
SPI80N08S2-07R
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| OCR Text |
...jmax 2) Reverse diode dv/dt
IS=80a, VDS=60V, di/dt=200A/s, T jmax=175C
Gate source voltage Power dissipation
TC=25C
Operating and st...40v, VGS =10V, ID =80a, RG =2.4
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21 61 138 4.7
28 92 185 -
nC
V(plateau) VDD =60V, I... |
| Description |
Low Voltage MOSFETs - TO262; 80 A; 75V; NL; 7.3 mOhm; integrated Rg OptiMOS Power-Transistor
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| File Size |
324.92K /
8 Page |
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it Online |
Download Datasheet
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N04S2-H4 SPB80N04S2-H4 SPI80N04S2-H4
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| OCR Text |
...jmax 2) Reverse diode dv/dt
IS=80a, VDS=32V, di/dt=200A/s, T jmax=175C
kV/s V W C
Gate source voltage Power dissipation
TC=25C
Op...40v, VGS=0V, Tj=25C V DS=40v, VGS=0V, Tj=125C 2)
A 0.01 1 1 3.4 1 100 100 4 nA m
Gate-source l... |
| Description |
OptiMOS Power-Transistor 的OptiMOS功率晶体 Low Voltage MOSFETs - TO220/262/263; 80a; 40v; NL; 4mOhm
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| File Size |
415.24K /
8 Page |
View
it Online |
Download Datasheet
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Infineon Technologies AG
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| Part No. |
SPP80N04S2L-04
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| OCR Text |
... mj reverse diode d v /d t i s =80a, v ds =32v, d i /d t =200a/s, t jmax =175c d v /d t 6 kv/s gate source voltage v gs 20 v power dissipa...40v, v gs =0v, t j =25c v ds =40v, v gs =0v, t j =125c i dss - - 0.01 1 1 100 a gate-sour... |
| Description |
80 A, 40 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET PLASTIC, TO-220, 3 PIN
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| File Size |
99.77K /
8 Page |
View
it Online |
Download Datasheet
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