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Icemos Technology
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| Part No. |
ICE10N65FP
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| OCR Text |
... d v /d t v ds =480v, i d =9.5a, t j =125 o c 50 v/ns gate source voltage v gs static 20 v ac ( f >1hz) 30 power d...650v min r ds(on) v gs =10v 0.35 typ q g v ds =480v 41nc typ icemos and its ... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
521.33K /
9 Page |
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it Online |
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Icemos Technology
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| Part No. |
ICE15N65FP
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| OCR Text |
... single pulse e as i d =7.5a 460 mj avalanche current, repetitive i ar limited by t j max 7.5 a mosfet d v /d t ...650v, v gs =0v, t j =25 o c - 0.1 1 a v ds =650v, v gs =0v, t j =150 o c - - ... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
521.12K /
9 Page |
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it Online |
Download Datasheet |
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Icemos Technology
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| Part No. |
ICE10N65
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| OCR Text |
...summary i d t a =25 o c 9.5a max v ( br)dss i d =250ua 650v min r ds(on) v gs =10v 0.35 typ q g v ds =480v 41nc typ icemos and its sister company 3 d semi own the fundamental patents f... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
555.33K /
9 Page |
View
it Online |
Download Datasheet |
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Icemos Technology
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| Part No. |
ICE13N65
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| OCR Text |
... single pulse e as i d =6.5a 460 mj avalanche current, repetitive i ar limited by t j max 6.5 a mosfet d v /d t ...650v, v gs =0v, t j =25 o c - 0.1 1 a v ds =650v, v gs =0v, t j =150 o c - - ... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
556.12K /
9 Page |
View
it Online |
Download Datasheet |
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|
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Icemos Technology
|
| Part No. |
ICE13N65FP
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| OCR Text |
... single pulse e as i d =6.5a 460 mj avalanche current, repetitive i ar limited by t j max 6.5 a mosfet d v /d t ...650v, v gs =0v, t j =25 o c - 0.1 1 a v ds =650v, v gs =0v, t j =150 o c - - ... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
521.21K /
9 Page |
View
it Online |
Download Datasheet |
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Icemos Technology
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| Part No. |
ICE11N65FP
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| OCR Text |
... single pulse e as i d =7.5a 460 mj avalanche current, repetitive i ar limited by t j max 7.5 a mosfet d v /d t ...650v min r ds(on) v gs =10v 0.25 typ q g v ds =480v 59nc typ icemos and its ... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
517.30K /
9 Page |
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it Online |
Download Datasheet |
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http://
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| Part No. |
SSD02N65
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| OCR Text |
... mj v dd =50v,l=1mh , i as =1.5a source-drain diode diode forward voltage 2 v sd - - 1 v i s =1a, v gs =0 , t j =25c, continu...650v , r ds(on) 8 n-ch enhancement mode power mosfet elektronische bauelemente 24-nov-2011 ... |
| Description |
2A , 650v , RDS(ON) 8 N-Ch Enhancement Mode Power MOSFET
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| File Size |
1,443.51K /
4 Page |
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it Online |
Download Datasheet |
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Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FS6S0965RC-YDTU FS6S0965RC FS6S0965RC-TU
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| OCR Text |
...DS=25V, f = 1MHz VDD=325V, ID=6.5a (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=6.5a, VDS=520V (...650v, Ta=25C Vdrain = 650v, Ta=25C 3500 650 300 V V uA VSTART VSTOP VFB=GND VFB=GND 14 8 15 9 16 10 ... |
| Description |
Fairchild Power Switch(SPS) 32.4 A SWITCHING REGULATOR, 150 kHz SWITCHING FREQ-MAX, PSFM5
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| File Size |
131.80K /
12 Page |
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it Online |
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