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  50v 4a Datasheet PDF File

For 50v 4a Found Datasheets File :: 2635    Search Time::1.687ms    
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    IRFG5210 IRFG5210N IRFG5210P IRFG5210-15

International Rectifier
Part No. IRFG5210 IRFG5210N IRFG5210P IRFG5210-15
OCR Text ... IF = 0.68A, di/dt 100A/s VDD 50v Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Therm...4a VGS = -10V, ID =- 0.68A VDS = VGS, ID = -0.25mA VDS > -15V, IDS = -0.4a VDS= -160V, VGS= 0V VDS...
Description Simple Drive Requirements
200V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY
200V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
200V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
200V Single P-Channel Hi-Rel MOSFET in a MO-036AB package

File Size 189.96K  /  12 Page

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International Rectifier
Part No. IRFS59N10DPBF IRFB59N10DPBF IRFB59N10DPBF-15
OCR Text ...onductance 18 ??? ??? s v ds = 50v, i d = 35.4a q g total gate charge ??? 76 114 i d = 35.4a q gs gate-to-source charge ??? 24 36 nc v ds = 80v q gd gate-to-drain ("miller") charge ??? 36 54 v gs = 10v, t d(on) turn-...
Description 59 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
High frequency DC-DC converters

File Size 227.93K  /  12 Page

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    IRF[International Rectifier]
Part No. IRFB59N10DPBF IRFSL59N10DPBF IRFS59N10DPBF
OCR Text ...x. Units Conditions --- S VDS = 50v, ID = 35.4a 114 ID = 35.4a 36 nC VDS = 80V 54 VGS = 10V, --- VDD = 50v --- ID = 35.4a ns --- RG = 2.5 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VG...
Description HEXFET Power MOSFET

File Size 221.36K  /  11 Page

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    SamHop Microelectronics...
Part No. STM121N
OCR Text ...switching characteristics v dd =50v i d =1a v gs =10v r gen =6ohm total gate charge rise time turn-off delay time fall time turn-on delay time v ds =10v , i d =1.4a input capacitance output capacitance dynamic characteristics forward transc...
Description    Super high dense cell design for low RDS(ON).
Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 100.91K  /  7 Page

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    AVX
Part No. FPC
OCR Text ...g 125V 125V 125V 125V 125V 125V 50v 50v 50v 50v 50v 50v 50v 50v 50v 50v 50v 50v 50v 50v 50v 50v 50v 50v 50v 50v 50v APPLICATION Flat fle...4a Max. 50v Max. 200Vrms 6222 LIF R/A SMT Bottom 1.95mm 5-30 0.4a Max. 50v Max. 200Vrms 6223 ...
Description Connector

File Size 2,235.28K  /  71 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDM3622_07 FDM3622 FDM362207
OCR Text ..."Miller" Charge VGS = 10V VDD = 50v ID = 4.4a VDD = 50v, ID = 4.4a VGS = 10V, RGEN = 24 11 25 35 26 13 3.6 3.4 20 40 56 42 17 ns ns ns ns nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reve...
Description N-Channel PowerTrench? MOSFET 100V, 4.4a, 60mΩ
N-Channel PowerTrench㈢ MOSFET 100V, 4.4a, 60mヘ

File Size 174.85K  /  7 Page

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    IRHY7130CMPBF IRHY7130CM-15

International Rectifier
Part No. IRHY7130CMPBF IRHY7130CM-15
OCR Text ...overy charge ? ? 2.5 c v dd 50v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially contro...4a v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconduc...
Description Simple Drive Requirements

File Size 122.35K  /  8 Page

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    Cystech Electonics Corp...
Part No. MTEA0N10Q8 MTEA0N10Q8-0-T3-G
OCR Text ... *1, 2 - 3.8 - nc v ds =50v, v gs =10v, i d =5.6a t d(on) *1, 2 - 22 - tr *1, 2 - 21 - t d(off) *1, 2...4a, v gs =0v trr - 30 - ns qrr - 18 - nc i f =4a, di f /dt=100a/ s note : *1.pulse t...
Description N-Channel Enhancement Mode Power MOSFET

File Size 319.53K  /  9 Page

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    ZXMP10A17G ZXMP10A17GTA

Diodes Incorporated
Part No. ZXMP10A17G ZXMP10A17GTA
OCR Text ... iss ? 424 ? pf v ds = -50v, v gs = 0v f = 1mhz output capacitance c oss ? 36.6 ? pf reverse transfer capacitance c rss ...4a total gate charge (note 7) q g ? 10.7 ? nc v gs = -10v gate-source charge (note 7) q ...
Description 100V P-CHANNEL ENHANCEMENT MODE MOSFET

File Size 630.57K  /  8 Page

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    IRHY57234CMSE

International Rectifier
Part No. IRHY57234CMSE
OCR Text ...5 0.1 5 6 7 8 15 V DS = 50v 20s PULSE WIDTH 9 10 11 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( C) Fig 3. Typical Transfer Characteristics F...
Description RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-257AA)
250v 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package

File Size 111.73K  /  8 Page

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For 50v 4a Found Datasheets File :: 2635    Search Time::1.687ms    
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