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400v-0.48-10a- Datasheet PDF File

For 400v-0.48-10a- Found Datasheets File :: 346 Search Time::2.141ms
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				Alpha & Omega Semiconductors
Part No.	AOB20S60 AOT20S60 AOTF20S60 AOB20S60L
OCR Text	...9 w q g,typ 20nc e oss @ 400v 4.9 m j 100% uis tested 100% r g tested for halogen free add "l" suffix to part number: aot20s...0.5 -- 65 -- continuous drain current t c =25c i d aotf20s60 thermal characteristics parameter maxim...
Description	600V 20A a MOS TM Power Transistor 600V 20A a MOS Power Transistor
File Size	322.00K / 7 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STTH10LCD06
OCR Text	...11 12 10 100 1000 if = 10a v r =400v t j = 125 c t j = 25 c i (a) rm di /dt(a/s) f 0 20 40 60 80 100 120 140 160 180 200 220 0 50 100 150 200 250 300 350 400 450 500 if = 10a v r =400v t j = 125 c t j = 25 c t (ns) rr di /dt(a/s) f ...
Description	Ultrafast Rectifiers
File Size	194.11K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SKW30N60HS SKW30N60HS08
OCR Text	...gy e ts t j =25 c, v cc =400v, i c =30a, v ge =0/15v, r g =11 ? l 2) =60nh, c 2) =40pf energy losses include ?tail? and diode reverse recovery. - 1.15 mj anti-parallel diode characteristic diode reverse recovery...
Description	High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
File Size	347.82K / 14 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AOT10B60D
OCR Text	...anding time v ge = 15v, v ce 400v, delay between short circuits 1.0s, t c =150c junction and storage temperature range t c =25c therma...0.92 maximum igbt junction-to-case g c e top view aot10b60d to-220 g c e rev1: nov 2012 ...
Description	600V, 10A Alpha IGBT with Diode
File Size	638.47K / 9 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AOTF10B60D
OCR Text	...anding time v ge = 15v, v ce 400v, delay between short circuits 1.0s, t c =150c junction and storage temperature range t c =25c therma...0.26 - mj e off - 0.07 - mj e total - 0.33 - mj t rr - 105 - ns q rr - 0.25 - m c i rm - 5 - a t d(o...
Description	AOTF10B60D
File Size	651.01K / 9 Page	View it Online	Download Datasheet

				Supertex, Inc.
Part No.	LR8N3-P002 LR8N3-P013 LR8N3-P003-G LR8N3-P014-G LR8N3-P002-G LR8N3-P013-G
OCR Text	...1.14 1.20 1.26 v 13.2v < v in < 400v, r1 = 2.4k, r2 = 0 v out overall output voltage regulation 375 400 425 v r1 = 2.4k, r2 = 782k v out line regulation - 0.003 0.01 %/v 17v < v in < 400v, v out = 5v, i out = 0.5ma v out load regulation...
Description
File Size	1,058.72K / 10 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IGW40T120 Q67040-S4519 GW40T120
OCR Text	...J 50C 100C 150C 0mJ 400V 500V 600V 700V 800V TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses ...0/15V, IC=40A, RG=15, Dynamic test circuit in Figure E) VCE, COLLECTOR-EMITTER VOLTAGE Figure 16....
Description	From old datasheet system Low Loss IGBT in Trench and Fieldstop technology IGBTs & DuoPacks - 40A 1200V TO247 IGBT
File Size	407.11K / 12 Page	View it Online	Download Datasheet

				Infineon
Part No.	SKB06N60HS
OCR Text	...d time 1) v ge = 15v, v cc 400v, t j 150 c t sc 10 s power dissipation t c = 25 c p tot 68 w operating junction and storage te...0.063 in.) from case for 10s - 260 c 1) allowed number of short circuits: <1000; time between shor...
Description	IGBTs & DuoPacks - 6A 600V TO263 IGBT Diode
File Size	422.36K / 14 Page	View it Online	Download Datasheet

				Isocom Components
Part No.	4N40 4N39
OCR Text	... High Blocking Voltage (200V1, 400V1) l Low Turn on Current (5mA typical) l All electrical parameters 100% tested l Custom electrical selections available 0.5 min. 0.48 5.1 max. 3.9 3.1 0.25 15 Max ABSOLUTE MAXIMUM RATINGS (25C u...
Description	Photo Coupled Isolator GaAs Infrared Emitting Diode & Light Activated SCR(正向峰值电00V的光耦合/隔离器（由GaAs红外发光二极光活性硅控整流器组成
File Size	67.85K / 4 Page	View it Online	Download Datasheet

				ShenZhen FreesCale Electronics. Co., Ltd
Part No.	AOT20S60
OCR Text	...9 w q g,typ 20nc e oss @ 400v 4.9 m j symbol v ds v gs i dm i ar e ar e as mosfet dv/dt ruggedness peak diode recovery dv/dt h t j ,...0.5 -- 65 -- continuous drain current t c =25c i d aotf20s60 thermal characteristics parameter maxim...
Description	600V 20A a MOS TM Power Transistor
File Size	746.21K / 7 Page	View it Online	Download Datasheet

For 400v-0.48-10a- Found Datasheets File :: 346 Search Time::2.141ms
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