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400 600 800 1200v Datasheet PDF File

For 400 600 800 1200v Found Datasheets File :: 1579 Search Time::1.813ms
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				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	QM100DY-24 QM100DY-24K
OCR Text	... -- -- -- -- -- -- Max. 2.0 2.0 400 3.0 3.5 1.8 -- 3.0 15 3.0 0.155 0.65 0.075 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MI...600 400 200 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 10 0 10 -1 10 0 2 3 4 5 7 10 1 2 ...
Description	100 A, 2 CHANNEL, NPN, Si, POWER TRANSISTOR MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
File Size	100.52K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM150DY-24BK QM150
OCR Text	...0 80 40 0 0 Tj=125C -IB2=3A 200 400 600 800 1000 1200 1400 tf VCC=600V IC=150A IB1=300mA Tj=25C Tj=125C 3 4 5 7 10 1 2 3 4 5 7 10 2 23 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERA...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	82.55K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM150DY-24K QM150
OCR Text	... -- -- -- -- -- -- Max. 2.0 2.0 400 3.0 3.5 1.8 -- 3.0 15 3.0 0.125 0.60 0.075 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MI...600 400 200 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 Irr (A), Qrr (c) REVERSE RECOVERY CHARACTERISTIC...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	81.86K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM300DY-24B
OCR Text	...CTOR CURRENT IC (A) IB=400mA 400 IB=100mA 300 IB=50mA 200 100 DC CURRENT GAIN hFE IB=200mA Tj=25C Tj=125C 2 3 4 5 7 10 ...600 COLLECTOR CURRENT IC (A) ts, tf (s) Tj=125C IB2=-6A 500 400 300 200 100 0 ts SWIT...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	83.90K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM300HA-24B
OCR Text	...B=400mA DC CURRENT GAIN hFE 400 IB=200mA IB=100mA 300 IB=50mA 10 4 7 5 4 3 2 10 3 7 5 4 3 2 10 2 VCE=4V 200 100 Tj=...600 COLLECTOR CURRENT IC (A) ts, tf (s) Tj=125C IB2=-6A ts 500 400 300 200 100 0 S...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	72.24K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM300HA-2HB
OCR Text	...B=400mA DC CURRENT GAIN hFE 400 IB=200mA IB=100mA 300 IB=50mA 10 4 7 5 4 3 2 10 3 7 5 4 3 2 VCE=4V 200 100 0 0 ...600 COLLECTOR CURRENT IC (A) ts, tf (s) Tj=125C IB2=-6A ts 500 400 300 200 100 0 S...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	72.15K / 5 Page	View it Online	Download Datasheet

				http:// FUJI[Fuji Electric]
Part No.	7MBR35SB120 7MBR35SB-120
OCR Text	...E [ V ] 600 15 1000 400 10 Coes Cres 200 5 100 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 0 0 100 200 Gate charge : Qg [ nC ] 300 0 400 IGBT Modules 7MBR35SB120 [ Inverter ] Switc...
Description	IGBT(1200v/35A/PIM)
File Size	559.44K / 7 Page	View it Online	Download Datasheet

				Infineon
Part No.	BSM200GA120DN2 200A12N2
OCR Text	...rrent, tp = 1 ms ICpuls 600 400 TC = 25 C TC = 80 C Power dissipation per IGBT Ptot 1550 W + 150 -55 ... + 150 0.08 0.15 2500 20 11 F 55 / 150 / 56 Vac mm K/W C TC = 25 C Chip temperature Storage temperature Thermal res...
Description	IGBT Power Module From old datasheet system
File Size	122.84K / 9 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	CM1000HA-24H
OCR Text	...800 1200 3 800 2 400 9 87 400 1 Tj = 25C Tj = 125C 0 0 2 4 6 8 10 0 0 4 8 12 16 20 VGE, (VOLTS) 0 0 400 800 1200 1600 2000 VCE, (VOLTS) IC, (AMPERES) COLLECTOR-...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	48.69K / 4 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STTA806G-TR STTA806DIRG STTA806DI STTA806 STTA806D STTA806G
OCR Text	... dIF/dt(A/ s) 0.0 0 100 200 300 400 500 600 700 800 900 1000 Fig. 5: Reverse recovery time versus dIF/dt. trr(ns) 90% CONFIDENCE Tj=125 oC Fig. 6: Softness factor (tb/ta) versus dIF/dt. 1.6 S factor Typical values Tj=125 oC IF<2x...
Description	TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
File Size	263.23K / 9 Page	View it Online	Download Datasheet

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