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5KP20A 103KA 100CT TK63135H 1D9MSM RB480 BA4558N 34063A
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  33a Datasheet PDF File

For 33a Found Datasheets File :: 1041    Search Time::2.312ms    
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    IRGP50B60PD

International Rectifier
Part No. IRGP50B60PD
OCR Text ...) typ. = 2.00V @ VGE = 15V IC = 33a Applications * * * * Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies G E Features * * * * * * * NPT Technology, Positive Tem...
Description IGBT (Insulated-Gate Bipolar Transistor) - Datasheet Reference

File Size 476.76K  /  10 Page

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    AP70T03GP AP70T03GS AP70T03GP-14

Advanced Power Electronics Corp.
Advanced Power Electronics ...
Part No. AP70T03GP AP70T03GS AP70T03GP-14
OCR Text ...e on-resistance v gs =10v, i d =33a - - 9 m ? v gs =4.5v, i d =20a - - 18 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs v ds =10v, i d =33a - 35 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 1 ua ...
Description Simple Drive Requirement, Low Gate Charge

File Size 95.15K  /  4 Page

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    AP70T03GJ-HF AP70T03GH-HF-14 AP70T03GJ-HF-14

Advanced Power Electronics Corp.
Advanced Power Electronics ...
Part No. AP70T03GJ-HF AP70T03GH-HF-14 AP70T03GJ-HF-14
OCR Text ...on-resistance 2 v gs =10v, i d =33a - - 9 m ? v gs =4.5v, i d =20a - - 18 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs v ds =10v, i d =33a - 35 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 1 ua ...
Description Simple Drive Requirement, Low Gate Charge

File Size 95.32K  /  4 Page

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    AP70T03GI AP70T03GI-14

Advanced Power Electronics Corp.
Advanced Power Electronics ...
Part No. AP70T03GI AP70T03GI-14
OCR Text ...on-resistance 2 v gs =10v, i d =33a - - 9 m v gs =4.5v, i d =20a - - 18 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =33a - 35 - s i dss drain-source leakage current v ds...
Description Fast Switching Performance, Single Drive Requirement

File Size 118.32K  /  5 Page

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    AP70T03AS

Advanced Power Electronics Corp.
Part No. AP70T03AS
OCR Text ...e on-resistance v gs =10v, i d =33a - - 9 m v gs =4.5v, i d =20a - - 18 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs v ds =10v, i d =33a - 35 - s i dss drain-source leakage current (t j =25 o c) v ds =30v, v gs =...
Description Simple Drive Requirement, Low Gate Charge

File Size 73.21K  /  4 Page

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    MES30B MES30B-0 MES30B-0P1J MES30B-1 MES30B-1-1 MES30B-1-1P1J MES30B-1P1J MES30B-2 MES30B-2P1J MES30B-3 MES30B-3P1J MES3

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Mean Well Enterprises Co., Ltd.
Part No. MES30B MES30B-0 MES30B-0P1J MES30B-1 MES30B-1-1 MES30B-1-1P1J MES30B-1P1J MES30B-2 MES30B-2P1J MES30B-3 MES30B-3P1J MES30B-6P1J MES30B-8P1J MES30B-4P1J MES30B-5P1J
OCR Text ...% MES30B-1-1 MES30B-2 7.5V 3.33a 0 ~ 3.33a 25W 40mVp-p 4.0% 1.0% 4.0% 9V 3.33a 0 ~3.33a 30W 50mVp-p 4.0% 1.0% 4.0% MES30B-3 12V 2.5A 0 ~ 2.5A 30W 50mVp-p 3.0% 1.0% 3.0% MES30B-4 15V 2.0A 0 ~ 2.0A 30W 60mVp-p 2.0% 1.0% 2.0% MES30...
Description 16.5~30WAC-DC Single Output and Medical Type Desktop

File Size 126.99K  /  2 Page

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    AP70T03AJ AP70T03AH

Advanced Power Electronics Corp.
Part No. AP70T03AJ AP70T03AH
OCR Text ...e on-resistance v gs =10v, i d =33a - - 9 m v gs =4.5v, i d =20a - - 18 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs v ds =10v, i d =33a - 35 - s i dss drain-source leakage current (t j =25 o c) v ds =30v, v gs =...
Description Simple Drive Requirement, Low Gate Charge

File Size 72.09K  /  4 Page

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    AP70L02GJ AP70L02GH

Advanced Power Electronics Corp.
Part No. AP70L02GJ AP70L02GH
OCR Text ...e on-resistance v gs =10v, i d =33a - - 9 m v gs =4.5v, i d =20a - - 18 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =33a - 28 - s i dss drain-source leakage current (t j =...
Description Low Gate Charge, Simple Drive Requirement

File Size 80.56K  /  6 Page

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    ATP207

Sanyo Semicon Device
Part No. ATP207
OCR Text ... Note : *1 VDD=10V, L=50H, IAV=33a *2 L50H, Single pulse Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditio...
Description N-Channel Silicon MOSFET General-Purpose Switching Device Applications

File Size 251.81K  /  4 Page

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