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  300-960 Datasheet PDF File

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    MRF174

MOTOROLA[Motorola, Inc]
Part No. MRF174
OCR Text ... 1000 900 800 700 600 500 400 300 200 100 Coss Ciss Crss 0 4 8 12 16 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 24 28 VGS = 0 V f = 1 MHz 1.1...960 0.956 0.955 - 133 - 160 - 170 - 175 - 177 - 177 - 178 - 178 - 178 - 178 - 178 - 178 - 178 - 178...
Description N-CHANNEL MOS BROADBAND RF POWER FET

File Size 166.51K  /  10 Page

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    Q67100-Q2099 HYM328025GS-60 HYM328025GS-50 HYM328025S-60 HYM328025S-50 Q67100-Q2098 Q67100-Q2330 HYM328025S

Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
Part No. Q67100-Q2099 HYM328025GS-60 HYM328025GS-50 HYM328025S-60 HYM328025S-50 Q67100-Q2098 Q67100-Q2330 HYM328025S
OCR Text ...n HYB 5117405BJ 4M x 4 DRAMs in 300 mil wide SOJ-packages mounted together with sixteen 0.2 F ceramic decoupling capacitors on a PC board. E...960 880 32 mA mA mA 2) 3) 4) ICC2 ICC3 - - - 960 880 mA mA 2) 4) Semicond...
Description 8M x 32 Bit DRAM Module
8M x 32-Bit EDO-DRAM Module

File Size 55.87K  /  11 Page

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    SML40J93 SML100J22 SML120J15 SML20J122 SML20J175

SemeLAB
SEME-LAB[Seme LAB]
Part No. SML40J93 SML100J22 SML120J15 SML20J122 SML20J175
OCR Text ...93 372 30 40 700 5.6 -55 to 150 300 93 50 3600 V A A V W W/C C A mJ 1) Repetitive Rating: Pulse Width limited by maximum junction temp...960 710 85 360 25 23 88 11 ns nC pF SOURCE - DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD ...
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 22.91K  /  2 Page

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    TK73230 TK73230M TK73230MCLH TK73230MILH TK73245MCL TK73222MILH TK73227 TK73227MCLH TK73227M TK73227MILH TK73239MCLH TK7

TOKO, Inc.
TOKO Inc.
TOKO[TOKO, Inc]
TOKO[TOKO Inc]
http://
Part No. TK73230 TK73230M TK73230MCLH TK73230MILH TK73245MCL TK73222MILH TK73227 TK73227MCLH TK73227M TK73227MILH TK73239MCLH TK73249 TK73228 TK73224M TK73239M TK73239MCLH_39 TK73239MILH TK73239MILH_39 TK73246MILH TK73246 TK73249M TK73249MCLH_49 TK73249MILH TK73249MILH_49 TK73255 TK73250MILH TK73250MCLH TK73250 TK73229 TK73231 TK73230MCLH_30 TK73230MILH_30 TK73247M TK73211 TK73211M TK73211MCLH TK73211MCLH_11 TK73211MILH TK73211MILH_11 TK73231M TK73231MCLH TK73231MCLH_31 TK73233MILH TK73233MILH_33 TK732XX TK73220 TK73220M TK73220MCLH TK73220MCLH_20 TK73220MILH TK73220MILH_20 TK73221 TK73221M TK73221MCLH TK73221MCLH_21 TK73221MILH TK73221MILH_21 TK73222 TK73222M TK73222MCLH TK73222MCLH_22 TK73222MILH_22 TK73223 TK73223M TK73223MCLH TK73223MCLH_23 TK73223MILH TK73223MILH_23 TK73224 TK73224MCLH TK73224MCLH_24 TK73224MILH TK73224MILH_24 TK73225 TK73225M TK73225MCLH TK73225MCLH_25 TK73225MILH TK73225MILH_25 TK73226 TK73226M TK73226MCLH TK73226MCLH_26 TK73226MILH TK73226MILH_26 TK73227MCLH_27 TK73227MILH_27 TK73228M TK73228MCLH TK73228MCLH_28 TK73228MILH TK73228MILH_28 TK73229M TK73229MCLH TK73229MCLH_29 TK73229MILH TK73229MILH_29 TK73231MILH TK73231MILH_31 TK73232 TK73232M TK73232MCLH TK73232MCLH
OCR Text ... VOUT(MIN) VOUT(MAX) 2.300 V 2.400 V 2.500 V 2.600 V 2.700 V 2.800 V 2.900 V 3.000 V 3.095 V 3.190 V 3.290 V 3.385 V 3.485 V 3.580 V 3.675 V 3.770 V 3.870 V 3.965 V 4.060 V 4.160 V 4.255 V 4.350 V 4.450 V 4.545 V 4.640 V 4.740 V 4....
Description 2.8V Low dropout regulator
DIODE ZENER SINGLE 150mW 15Vz 8.5mA-Izt 0.05 0.1uA-Ir 11 SOT-523 3K/REEL 低压差稳压器
Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection 无电容,NMOS管,150mA的低压差稳压器的反向电流保护

File Size 117.61K  /  16 Page

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    TZA3033 TZA3033T TZA3033U

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. TZA3033 TZA3033T TZA3033U
OCR Text ... - -65 - -40 +2.5 +15 +0.2 +2.5 300 +150 150 +85 -0.5 -0.5 -0.5 -0.5 +2 PARAMETER MIN. -0.5 TZA3033 MAX. +5.5 V V V V V UNIT VCC + 0.5 VCC + 0.5 VCC + 0.5 mA mA mA mA mW C C C THERMAL CHARACTERISTICS SYMBOL Rth(j-s) Rth(j-...
Description SDH/SONET STM1/OC3 transimpedance amplifier

File Size 88.36K  /  16 Page

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    UPA803 UPA803T UPA803T-T1

NEC[NEC]
Part No. UPA803 UPA803T UPA803T-T1
OCR Text ...0 FREQUENCY MHz 100.00 200.00 300.00 400.00 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 170...960 1.956 1.846 1.815 1.768 1.726 1.706 1.668 1.625 1.568 1.523 1.461 1.421 1.376 1.331 1.293 1.261 ...
Description NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

File Size 56.84K  /  8 Page

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    Unisem Group
UNISEM[UNISEM]
Part No. US3022 US3022CW
OCR Text ... 1.980 1.960 -2 150 2.000 2.000 300 2.020 2.040 600 V V % Ohm VID0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 Vs 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 Table 1 - Set point voltage vs. VID codes PIN ...
Description 4 BIT PROGRAMMABLE SYNCHRONOUS BUCK PLUS FOUR LDO CONTROLLER

File Size 60.07K  /  7 Page

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    BSP171 Q67000-S224

Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BSP171 Q67000-S224
OCR Text ...de direct current,pulsed A -0.9 300 0.82 -1.7 -6.8 V -1.2 ns C Values typ. max. Unit ISM VSD trr Qrr TA = 25 C Inverse diode forward voltage VGS = 0 V, IF = -3.4 A, Tj = 25 C Reverse recovery time VR = 30 V, IF=lS = 0 , diF/dt...
Description From old datasheet system
SIPMOS ? Small-Signal Transistor
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level Avalanche rated)

File Size 100.08K  /  8 Page

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    CGY2010G CGY2011G

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. CGY2010G CGY2011G
OCR Text ... (ETSI) GSM documents, the "ETS 300 577 specification", which are defined as follows: * ton = 542.8 s * T = 4.3 ms * Duty cycle = 1/8 The de...960 MHz at Pout(max) H2 H3 Stab 2nd harmonic level 3rd harmonic level stability note 2 RL = 100 ; re...
Description GSM 4 W power amplifiers

File Size 73.43K  /  12 Page

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    CGY2013G CGY2013GC1

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. CGY2013G CGY2013GC1
OCR Text ... (ETSI) GSM documents, the "ETS 300 577 specification", which are defined as follows: * ton = 542.8 s * T = 4.3 ms * Duty cycle = 1/8. The d...960 MHz at Po(max) -2 880 33.5 32 42 - - - - - - - - 35.5 - 52 -20 - - - - - PARAMETER CONDITIONS MI...
Description GSM 4 W power amplifier

File Size 86.11K  /  12 Page

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