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				Taiwan Semiconductor Company, Ltd
Part No.	TSC5802DCPROG TSC5802DCHC5G
OCR Text	... version: a13 to - 251 (ipak) to - 252 (dpak) product summary bv ceo 450v bv cbo 1050v i c 2a v ce(sat) 0.5v @ i c =0.7a, i b =0.14a features high voltage capability high switching s...
Description	High Voltage Fast-Switching NPN Power Transistor
File Size	129.85K / 5 Page	View it Online	Download Datasheet

				SamHop Microelectronics
Part No.	STU630S
OCR Text	...ged and reliable. to-252 and to-251 package. n-channel logic level enhancement mode field effect transistor absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous -pulsed a a www.samhop.com.tw jan,1...
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
File Size	115.05K / 8 Page	View it Online	Download Datasheet

				Pan Jit International Inc.
Part No.	PJU1N60
OCR Text	...a ta ? ca se: t o-220ab / t o-251 molded pla stic ? t ermin als : soldera ble per mil-st d-750,method 2026 or dering informa tion 600v n-channel enhancement mode mosfet m axi mum ra tings a nd thermal chara cteristics (t a =25 o c ...
Description	600V N-Channel Enhancement Mode MOSFET
File Size	239.96K / 5 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	BULD39D-1 BULD39DT4 -BULD39D-1
OCR Text	...fix "T4") Through-hole IPAK (TO-251) power package in tube (suffix "-1") In compliance with the 2002/93/EC European Directive 1 2 3 1 3 IPAK TO-251 (suffix "-1") DPAK TO-252 (suffix "T4") Description The device in manufac...
Description	High Voltage Fast-Switching NPN Power Transistor
File Size	230.03K / 12 Page	View it Online	Download Datasheet

				??『绉???′唤?????? Unisonic Technologies Co., Ltd. 友顺科技股份有限公司 UTC[Unisonic Technologies]
Part No.	2N60-TM3-T 2N60 2N60-TF3-R 2N60-TF3-T 2N60-TA3-R 2N60-TA3-T 2N60L-TN3-T 2N60L-TA3-R 2N60L-TA3-T 2N60L-TF3-R 2N60L-TF3-T 2N60L-TM3-R 2N60L-TM3-T 2N60L-TN3-R 2N60-TM3-R 2N60-TN3-R 2N60-TN3-T
OCR Text	...uits. 1 Power MOSFET TO- 251 1 TO-252 1 TO-220 FEATURES * RDS(ON) = 3.8@VGS = 10V. * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (Crss = typical 5.0 pF) * Fast switching capability * Avala...
Description	2 Amps, 600 Volts N-CHANNEL MOSFET 2安培00伏特N通道MOSFET
File Size	139.24K / 8 Page	View it Online	Download Datasheet

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