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    IRF1405

International Rectifier
Part No. IRF1405
OCR Text ... screw Max. 169 118 680 330 2.2 20 560 See Fig.12a, 12b, 15, 16 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A ...LD LS Ciss Coss Crss Coss Coss Coss eff. Parameter Drain-to-Source Breakdown Voltage Breakdown Vo...
Description Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A)
Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=169A)

File Size 114.28K  /  9 Page

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    IRF1407L IRF1407S IRF1407STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF1407L IRF1407S IRF1407STRR
OCR Text ...istance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1407L) is available for lowprofile...LD LS Ciss Coss Crss Coss Coss Coss eff. Parameter Drain-to-Source Breakdown Voltage Breakdown Vo...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?)
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A)
Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)
TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五(巴西)直| 100号A(丁)|63AB

File Size 158.12K  /  11 Page

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    IRF1407

International Rectifier
Part No. IRF1407
OCR Text ...screw Max. 130V 92V 520 330 2.2 20 390 See Fig.12a, 12b, 15, 16 4.6 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A ...LD LS Ciss Coss Crss Coss Coss Coss eff. Parameter Drain-to-Source Breakdown Voltage Breakdown Vo...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?)
POWER MOSFET(VDSS=75V, RDS(ON)=0.0078OHM, ID=130Aㄌ)
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A)
Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)

File Size 126.10K  /  9 Page

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    IRF140SMD

International Rectifier
Seme LAB
Part No. IRF140SMD
OCR Text 2 ) M ax. 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4...LD LS Forward Transconductance VDS 15V VGS = 0 Zero Gate Voltage Drain Current Forward Gate -...
Description N-CHANNEL POWER MOSFET

File Size 22.30K  /  2 Page

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    IRF150SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF150SMD
OCR Text ...EL POWER MOSFET 3 .6 0 (0 .1 4 2 ) M ax. 1 3 0 .7 6 (0 .0 3 0 ) m in . VDSS ID(cont) RDS(on) FEATURES 100V 19A W 0.070W ...LD LS Forward Transconductance VDS 15V VGS = 0 Zero Gate Voltage Drain Current Forward Gate -...
Description N-CHANNEL POWER MOSFET

File Size 22.29K  /  2 Page

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    IRF1607

International Rectifier
Part No. IRF1607
OCR Text ... screw Max. 142 100 570 380 2.5 20 1250 See Fig.12a, 12b, 15, 16 5.2 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A...LD LS Ciss Coss Crss Coss Coss Coss eff. Parameter Drain-to-Source Breakdown Voltage Breakdown Vo...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)

File Size 179.50K  /  9 Page

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    IRF1704

International Rectifier
Part No. IRF1704
OCR Text ...Capacitance Min. 40 --- --- 2.0 110 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.036 --- --...LD) Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) Startin...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A??
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A)
POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?)
Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)

File Size 100.05K  /  8 Page

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    IRF2204

International Rectifier
Part No. IRF2204
OCR Text ... screw Max. 210 150 850 330 2.2 20 460 See Fig.12a, 12b, 15, 16 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/...LD LS Ciss Coss Crss Coss Coss Coss eff. Parameter Drain-to-Source Breakdown Voltage Breakdown Vo...
Description 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
AUTOMOTIVE MOSFET

File Size 138.67K  /  9 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ... DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow prop...LD Measured Between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the C...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF240SMD

SemeLAB
SEME-LAB[Seme LAB]
Air Cost Control
Part No. IRF240SMD
OCR Text 2 ) M ax. 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4...LD LS Forward Transconductance VDS 15V VGS = 0 Zero Gate Voltage Drain Current Forward Gate -...
Description    N.CHANNEL POWER MOSFET
N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)3.9A,的Rds(on):0.18Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)3.9A时,RDS(对):0.18Ω))

File Size 22.29K  /  2 Page

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