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190m Datasheet PDF File

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				Sumida Corporation
Part No.	CLS4D23B CLS4D28B
OCR Text	...2A 1.66A 132m(102m) 0.80A 1.54A 190m(146m) 1.16A 2.56A 80m(60m) 0.80A 1.64A 155m(121m) 0.68A 1.23A 220m(171m) 1.10A 2.30A 95m(72m) 0.96A 1.80A 145m(114m) 0.64A 1.20A 310m(240m) 2.40A 3.20A 35m(27m) 1.70A 2.00A 78m(60m) 1.44A 1.80A 100m(75m)...
Description	2 in 1 Inductor & 3 in 1 Inductor
File Size	300.83K / 3 Page	View it Online	Download Datasheet

				Anachip Corp ETC
Part No.	AF2301P AF2301PW AF2301PWA AF2301PWLA AF2301PWL
OCR Text	...RDS (on), VGS@-2.5V, IDS@-2.0A =190m. Pin Assignments 3 (Top View) 1. G 2. S 3. D Pin Descriptions Pin No. 1 2 3 Pin Name G S D Description Gate Source Drain 1 2 Ordering information AX Feature F :MOSFET PN 2301P X X X Pac...
Description	V(ds): -20V; V(gs): -8V; -2.3A; 20V P-channel enchancement mode MOSFET 20V P-Channel Enhancement Mode MOSFET Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:21-41 RoHS Compliant: No MS27467T21B41S
File Size	129.04K / 4 Page	View it Online	Download Datasheet

				ATMEL Corporation
Part No.	ATC18RHA08
OCR Text	...mitter: width= 3x95m and pitch= 190m LVDS Receiver and LVPECL Receiver : width= 2x95m and pitch=95m 3 4261F-AERO-08/08 PCI Buffers The PCI buffers are based on the 3.3V PCI standard where Inputs are required to be clamped to both ...
Description	Rad. Hard 0.18 μm CMOS Cell-based ASIC for Space Use Rad. Hard 0.18 楼矛m CMOS Cell-based ASIC for Space Use
File Size	155.62K / 22 Page	View it Online	Download Datasheet

				Sirectifier Global Corp.
Part No.	RTM2301CX RTM2301
OCR Text	...n), Vgs @ - 2.5V, Ids @ - 2.0A =190m Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Block Diagram ...
Description	20V P-Channel Enhancement Mode MOSFET
File Size	179.29K / 4 Page	View it Online	Download Datasheet

				SUMIDA[Sumida Corporation]
Part No.	CDC4D20 CDC5D23B
OCR Text	...m 350m 330m 320m 260m 230m 210m 190m Rated Current (A) 1 D.C.R.() : Max. 39m( 30m) 44m( 34m) 49m( 38m) 56m( 43m) 62m( 48m) 78m( 60m) 91m( 70m) Rated Current (A) 1 2.16 2.08 1.90 1.84 1.60 1.44 1.36 CDC5D23B Measuring Freq. (L) CDC4D...
Description	POWER INDUCTORS
File Size	95.15K / 2 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APTM60A23FT1G
OCR Text	190m typ @ Tj = 25C ID = 20A @ Tc = 25C Application * * * * Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features * Power MOS 8TM FREDFETs - Low RDSon - Low input and Miller capacitance - ...
Description	Phase leg MOSFET Power Module
File Size	184.40K / 5 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APTM60H23FT1G
OCR Text	190m typ @ Tj = 25C ID = 20A @ Tc = 25C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Power MOS 8TM FREDFETs - Low RDSon - Low input and Miller capacitance - Low...
Description	Full - Bridge MOSFET Power Module
File Size	186.63K / 5 Page	View it Online	Download Datasheet

				Chino-Excel Technology
Part No.	CEM735008
OCR Text	190m @VGS = 10V. -100V, -2.0A, RDS(ON) = 320m @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8 D1 7 D2 6 D2 5 SO-8...
Description	Dual Enhancement Mode Field Effect Transistor (N and P Channel)
File Size	543.06K / 7 Page	View it Online	Download Datasheet

				Diodes Incorporated
Part No.	ZXMP6A17N8TC ZXMP6A17N8-15
OCR Text	... RDS(on) 125m @ VGS = -10V -60V 190m @ VGS = -4.5V -2.8A ID TA = 25C -3.4A Features and Benefits * * * * Fast switching speed Low input capacitance "Green" component and RoHS compliant (Note 1) Qualified to AEC-Q101 Standards for High R...
Description	60V P-CHANNEL ENHANCEMENT MODE MOSFET
File Size	664.18K / 8 Page	View it Online	Download Datasheet

				Diodes Incorporated Diodes Inc. Diodes, Inc.
Part No.	DMP3160L DMP3160L-7
OCR Text	...GS = -10V, ID = -2.7A RDS(ON) < 190m @ VGS = -4.5V, ID = -2.0A Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2, 4 and 6) ...
Description	P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 2.7 A, 20 V, 0.122 ohm, P-CHANNEL, Si, POWER, MOSFET GREEN, PLASTIC PACKAGE-3
File Size	101.82K / 4 Page	View it Online	Download Datasheet

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