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MICROSEMI CORP-LAWRENCE
CDI-DIODE[Compensated Deuices Incorporated]
Compensated Devices Incorporated
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| Part No. |
CD5356B CD5364B CD5349B CD5339B CD5345B CD5360B CD5361B CD5362B CD5363B CD5365B CD5366B CD5367B CD5368B CD5369B CD5370B CD5371B CD5372B CD5373B CD5374B CD5375B CD5376B CD5377B CD5378B CD5379B CD5333B CD5334B CD5335B CD5336B CD5337B CD5338B CD5340B CD5341B CD5342B CD5343B CD5344B CD5346B CD5347B CD5348B CD5350B CD5351B CD5352B CD5353B CD5354B CD5355B CD5357B CD5358B CD5359B CD5334 CD5339A D5337A CD5350A CD5350 CD5370 CD5333
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| OCR Text |
... 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 47 51 56 60 62 68 75 82 87 91 100 110 MAXIMUM ZENER IMPEDANCE ZZT (Note 2) OHMS 3.0 2.5 2.0 2.0 2.0 1.5 1.0 1.0 1.0 1.0 1.5 1.5 2.0 2.0 2.0 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 ... |
| Description |
surface mount silicon Zener diodes
4.7 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5.6 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
3.6 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
ZENER DIODE CHIPS
13 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
56 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
3.3 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
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| File Size |
81.71K /
2 Page |
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HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
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| Part No. |
IRF234 IRF235 IRF236 IRF237
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| OCR Text |
...S IG(REF) = 1.5mA, (Figures 14, 19, 20) Gate Charge is Essentially Independent of Qgs Operating Temperature Qgd VDS 50V, ID = 4.1A, (Figure...68 14 35 47 29 35
S ns ns ns ns nC
-
5.1 12
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nC nC
5-2
IRF234, IRF235, IRF23... |
| Description |
8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
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| File Size |
68.51K /
7 Page |
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it Online |
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IRF[International Rectifier]
International Rectifier, Corp.
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| Part No. |
IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
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| OCR Text |
...-- --- --- --- --- --- Typ. --- 19 8.1 6.4 16 8.4 98 12 5.0 1996 1085 155 Max. Units Conditions --- S VDS = 10V, ID = 57A --- ID = 28.4A ---...68 62 75 V ns nC ns nC
VSD trr Qrr trr Qrr
--- 0.88 --- 0.82 --- 38 --- 45 --- 41 --- 50
Co... |
| Description |
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?)
Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A)
CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 77A条?
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB
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| File Size |
123.62K /
10 Page |
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it Online |
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