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Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
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| Part No. |
DCR504ST14 DCR504ST DCR504ST10 DCR504ST11 DCR504ST12 DCR504ST13
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| OCR Text |
...id for Tj = 125C for IT 500A to 1800a Where
5/8
www.dynexsemi.com
DCR504ST
10000
IT QR tp dIT/dt 0.25xIRM
Conditions: Tj = 125C VR = 50V tp = 1ms
100
0W 10 W 50
IRM
20 W
10
Recovered charge, QR - (C)
G... |
| Description |
Phase Control Thyristor 717 A, 1000 V, SCR
Phase Control Thyristor 717 A, 1100 V, SCR
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| File Size |
106.85K /
8 Page |
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it Online |
Download Datasheet
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IRF[International Rectifier]
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| Part No. |
IRKDL450-25S20 IRKDL450 IRKDL450-16S20 IRKDL450-20S20
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| OCR Text |
...IF(AV)), T J = T J max. V Ipk = 1800a, TJ = 25C, tp = 10ms sine pulse
VF(TO)1 Low level value of threshold voltage VF(TO)2 High level value of threshold voltage rf1 rf2 VFM Low level value of forward slope resistance High level value of ... |
| Description |
1600V Fast Recovery Diode in a Super MAGN-A-Pak package
2500V Fast Recovery Diode in a Super MAGN-A-Pak package
SUPER MAGN-A-PAK Power Modules
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| File Size |
101.56K /
7 Page |
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it Online |
Download Datasheet |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
QIQ0645001
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| OCR Text |
...VGE2=15V RG=1.6 IF=900A diF/dt=-1800a/S Min. Typ. 2.43 Max. 45 15.9 9 350 600 350 300 110 Units nF nF ns ns ns ns ns ns C
Thermal and Mechanical Characteristics, Tj=25C unless otherwise specified
Characteristic Thermal Resistance, Junc... |
| Description |
Low side Chopper IGBT Module 600V 450A IGBT / 600V 450A Fast Diode
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| File Size |
72.29K /
3 Page |
View
it Online |
Download Datasheet |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
QIQ0645002
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| OCR Text |
...VGE2=15V RG=4.2 IF=900A diF/dt=-1800a/S Min. Typ. 8.4 Max. 123 8.1 4.5 TBD TBD TBD TBD 150 Units nF nF ns ns ns ns ns ns C
Thermal and Mechanical Characteristics, Tj=25C unless otherwise specified
Characteristic Thermal Resistance, Jun... |
| Description |
Low side Chopper IGBT Module 600V 450A IGBT / 600V 450A Fast Diode
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| File Size |
75.92K /
2 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SIDC06D60C6
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| OCR Text |
...
max.
Unit
IRM
di/dt=1800a/ s V R =300V V GE = - 1 5 V I F =20A
A
Recovered charge Qr
di/dt=1800a/ s V R =300V V GE = - 1 5 V I F =20A
C
Reverse recovery energy E rec
di/dt=1800a/ s V R =300V V GE = - 1 5 V
m... |
| Description |
Fast switching diode chip in EMCON 3 -Technology
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| File Size |
58.74K /
4 Page |
View
it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
TIP147T TIP145T TIP146T TIP147TTU
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| OCR Text |
...
hFE, DC CURRENT GAIN
IB = -1800a IB = -1600A IB = -1400A IB = -1200A IB = -1000A IB = -800A
10000
1000
IB = -600A
IB = -400A
100 -0.1
-1
-10
-100
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
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| Description |
PNP Epitaxial Silicon Darlington Transistor
Monolithic Construction With Built In Base-Emitter Shunt Resistors
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| File Size |
49.81K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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