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Mitsubishi Electric Corporation
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| Part No. |
CM800HB-66H
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| OCR Text |
...VGE = 0V IE = 800A, die / dt = -1600a / s Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied Min -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ -- 6.0 -- 3.80 4.00 120 12.0 3... |
| Description |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
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| File Size |
50.54K /
4 Page |
 View
it Online |
Download Datasheet
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NIEC[Nihon Inter Electronics Corporation]
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| Part No. |
PHMB800A6
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| OCR Text |
...al)
TC=25
16
TC=25 IC=320A 1600a
VGE=20V
12V
Collector to Emitter Voltage V CE (V)
15V 10V
14
800A
12 10 8 6 4 2 0
Collector Current I C (A)
1200
800
9V
400
8V 7V
0 0 2 4 6 8 10
0
4
8
1... |
| Description |
IGBT MODULE Single 800A 600V
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| File Size |
107.90K /
3 Page |
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it Online |
Download Datasheet |
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Dynex Semiconductor, Ltd.
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| Part No. |
DIM200PKM33-F000
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| OCR Text |
...IF = 200A, VR = 1800V, dlF/dt = 1600a/s Diode arm Min. Typ. 1950 170 220 1180 225 5 290 80 144 75 Max. Units ns ns mJ ns ns C mJ C A mJ
Tcase = 125 unless stated otherwise. C
Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter T... |
| Description |
IGBT Chopper Module 200 A, 3300 V, N-CHANNEL IGBT
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| File Size |
231.79K /
10 Page |
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it Online |
Download Datasheet |
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http://
POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM800HB-66H
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| OCR Text |
...VGE = 0V IE = 800A, die / dt = -1600a / s Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied Min -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ -- 6.0 -- 3.80 4.00 120 12.0 3... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE
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| File Size |
45.62K /
4 Page |
View
it Online |
Download Datasheet |
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Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM800HB-50H
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| OCR Text |
...VGE = 0V IE = 800A, die / dt = -1600a / s Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied Min -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ -- 6.0 -- 2.80 3.15 120 13.2 4... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE
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| File Size |
45.57K /
4 Page |
View
it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
CM800HA-50H
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| OCR Text |
... VGE = 0V IE = 800A die / dt = -1600a / s Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied
Min -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
Limits Typ -- 6.0 -- 3.20 3.60 80 8... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE
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| File Size |
39.42K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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