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  1 mbit 128kb x8 low voltage uv Datasheet PDF File

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    Renesas Electronics Corporation.
Renesas Electronics, Corp.
Part No. M38030F2L-XXXHP M38030F2L-XXXKP M38030F2L-XXXSP M38030F2L-XXXWG M38030MAL-XXXWG M38030MAL-XXXKP M38030FAL-XXXSP M38031FAL-XXXHP M38030FAL-XXXWG M38030MAL-XXXHP M38030FAL-XXXKP M38031FAL-XXXKP M38030FAL-XXXHP M38031FAL-XXXSP M38031FAL-XXXWG M38030MAL-XXXSP M38030F3L-XXXHP M38030F3L-XXXWG M38030M3L-XXXKP M38030F3L-XXXSP M38030F3L-XXXKP M38030M3L-XXXHP M38030FBL-XXXWG M38030MBL-XXXHP M38030FBL-XXXHP M38030FBL-XXXSP M38030MBL-XXXKP M38030M2L-XXXHP M38030M2L-XXXKP M38030M2L-XXXSP M38030M2L-XXXWG M38031F2L-XXXHP M38031F2L-XXXKP M38031F2L-XXXSP M38031F2L-XXXWG M38030FB-XXXHP M38031FBL-XXXSP M38035MBL-XXXSP M38038FBL-XXXSP M38039FBL-XXXSP M38030MBL-XXXSP M38036MBL-XXXSP M38037FBL-XXXSP M38037MBL-XXXSP M38036FBL-XXXSP M38038MBL-XXXSP M38031FC-XXXHP M38031FC-XXXKP M38031FC-XXXWG M38031FCL-XXXHP M38031FCL-XXXKP M38031FCL-XXXSP M38031FCL-XXXWG M38031F5-XXXKP M38031F5-XXXSP M38031F5-XXXWG M38031F5L-XXXHP M38031F5L-XXXKP M38031F5L-XXXSP M38031F5L-XXXWG M38030F1-XXXHP M38030F1-XXXKP M38030F1-XXXSP M38030F1-XXXWG M38030F1L-XXXHP M38030F1L-XXXKP M38030F1L-XXXSP M38030F1L-XXXWG M38031F1-XXXKP M38031F1-XXXWG M38031F1L-XXXHP M38031F1L-XXXKP M38031F6-XXXHP M38031F6-XXXKP M38031F6-XXXSP M38031F6-XXXWG M
Description 256 Kbit (32K x 8) nvSRAM; Organization: 32Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 256 Kb; Package: SOIC
3.3V Zero Delay Clock Buffer; voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C
256K (32K x 8) Static RAM; Density: 256 Kb; Organization: 32Kb x 8; Vcc (V): 4.50 to 5.50 V;
Three-PLL General Purpose FLASH Programmable Clock Generator; voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 1 MHz to 200 MHz; Outputs: 6
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 256; Vcc (V): 3.3; fMax (MHz): 66; tPD (ns): 12
8-mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V;
9-mbit (256K x 36/512K x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
9-mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
18-mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
Four Output PCI-X and General Purpose Buffer; voltage (V): 3.3 V; Frequency Range: 0 MHz to 140 MHz; Outputs: 4; Operating Range: 0 to 70 C
18-mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
9-mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
9-mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 2.4 to 2.6 V
4-mbit (512K x 8) Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.50 to 5.50 V;
4-mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 2.20 to 3.60 V;
64K x 16 Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V;
1-mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 4.5 to 5.5 V;
9-mbit (256K x 36/512K x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
1-mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V;
4 mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP
4 mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP
16-mbit (1M x 16 / 2M x 8) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 4.50 to 5.50 V;
4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT, BUSY; Density: 128 Kb; Organization: 8Kb x 16; Vcc (V): 4.5 to 5.5 V; Speed: 35 ns
9-mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
9-mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
9-mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 2.4 to 2.6 V
9-mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
8-mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 4.50 to 5.50 V;
9-mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 4.5 to 5.5 V;
9-mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM; Architecture: Standard Sync, Pipeline DCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
4-mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V;
8-mbit (1024K x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V;
18-mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V;
8-mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V;
3.3V Zero Delay Buffer; voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: -40 to 85 C
Programmable Skew Clock Buffer; voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C
18-mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
18-mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
512K x 8 Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.5 to 5.5 V;
18-mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 2.4 to 2.6 V
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C
3.3V Zero Delay Clock Buffer; voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C
2M x 8 Static RAM; Density: 16 Mb; Organization: 2Mb x 8; Vcc (V): 3.0 to 3.6 V;
16 mbit (512K X 32) Static RAM; Density: 16 Mb; Organization: 512Kb x 32; Vcc (V): 3.0 to 3.6 V;
3.3V Zero Delay Buffer; voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: 0 to 70 C
8-mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 3.0 to 3.6 V;
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6
2-mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 3.0 to 3.6 V;
16-mbit (1M x 16) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V;
4-mbit (256K x 18) Pipelined DCD Sync SRAM; Architecture: Standard Sync, Pipeline DCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V
512K (32K x 16) Static RAM; Density: 512 Kb; Organization: 32Kb x 16; Vcc (V): 3.0 to 3.6 V;
4-mbit (128K x 36) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 4 Mb; Organization: 128Kb x 36; Vcc (V): 3.1 to 3.6 V
1M x 16 Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V;
Programmable Skew Clock Buffer; voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
3.3V Zero Delay Clock Buffer; voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C
MoBL(R) 2 mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V;
Rambus(R) XDR(TM) Clock Generator; VDD: 2.5 V; Input Frequency: 100 MHz to 133 MHz; Output Frequency: 300 MHz to 800 MHz; # Out: 4
2-mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V;
4-mbit (128K x 36) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 4 Mb; Organization: 128Kb x 36; Vcc (V): 3.1 to 3.6 V
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 167; tPD (ns): 7
2.5V or 3.3V, 200-MHz, 1:10 Clock Distribution Buffer; voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 10; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 100; tPD (ns): 7
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 7
18-mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
low voltage Programmable Skew Clock Buffer; voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
Spread Spectrum Clock Generator; voltage(V): 3.3 V; Input Frequency Range: 25 MHz to 100 MHz; Output Frequency Range: 25 MHz to 100 MHz; Operating Range: 0 to 70 C; Package: SOIC
low Skew Clock Buffer; voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 143; tPD (ns): 9 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 154; tPD (ns): 6 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 3.3; fMax (MHz): 83; tPD (ns): 10 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6 单芯位CMOS微机
Three-PLL General-Purpose EPROM Programmable Clock Generator; voltage (V): 3.3/5.0 V; Input Range: 1 MHz to 30 MHz; Output Range: .077 MHz to 100 MHz; Outputs: 6 单芯位CMOS微机
8-mbit (512K x 16) MoBL(R) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
High Speed low voltage Programmable Skew Clock Buffer; voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V SDRAM Buffer for Mobile PCs with 4 SO-DIMMs; voltage (V): 3.3 V; Frequency Range: 0 MHz to 100 MHz; Outputs: 10; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: -40 to 85 C 单芯位CMOS微机
Programmable Skew Clock Buffer; voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机
2-mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 3.0 to 3.6 V; 单芯位CMOS微机
MoBL(R) 1 mbit (128K x 8) Static RAM; Density: 1 Mb; Organization: 128Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
18-mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
1-mbit (128K x 8) Static RAM; Density: 1 Mb; Organization: 128Kb x 8; Vcc (V): 4.50 to 5.50 V; 单芯位CMOS微机
4-mbit (256K x 18) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
2-mbit (64K x 32) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 2 Mb; Organization: 64Kb x 32; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
200-MHz Field Programmable Zero Delay Buffer; voltage (V): 2.5/3.3 V; Frequency Range: 10 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C 单芯位CMOS微机
2-mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
2-mbit (256K x 8) Static RAM; Density: 2 Mb; Organization: 256Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯8位CMOS微机
Very low Jitter Field and Factory Programmable Clock Generator; voltage (V): 3.3 V; Input Range: 10 MHz to 133 MHz; Output Range: 20 MHz to 200 MHz; Outputs: 2 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C 单芯位CMOS微机
Three-PLL General Purpose FLASH Programmable Clock Generator; voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 0 MHz to 200 MHz; Outputs: 3 单芯位CMOS微机
1:8 Clock Fanout Buffer; voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机
Quad PLL Clock Generator with 2-Wire Serial Interface; voltage (V): 2.5/3.3 V; Input Range: 27 MHz to 27 MHz; Output Range: 4.2 MHz to 166 MHz; Outputs: 5 单芯位CMOS微机
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C 单芯位CMOS微机
High Speed Multi-phase PLL Clock Buffer; voltage (V): 3.3 V; Operating Frequency: 24 MHz to 200 MHz; Outputs: 11; Operating Range: 0 to 70 C 单芯位CMOS微机
2.5V or 3.3V, 200-MHz, 1:18 Clock Distribution Buffer; voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 18; Operating Range: -40 to 85 C 单芯位CMOS微机
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 位AVR微控制器具有8K字节的系统内可编程闪
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C
1:8 Clock Fanout Buffer; voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: 0 to 70 C
Spread Spectrum Clock Generator; voltage(V): 3.3 V; Input Frequency Range: 4 MHz to 32 MHz; Output Frequency Range: 4 MHz to 32 MHz; Operating Range: 0 to 70 C; Package: SOIC
High Speed low voltage Programmable Skew Clock Buffer; voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9
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    DD28F032SA DD28F032SA-080 DD28F032SA-070 DD28F032SA-100 DD28F032SA-150

Intel Corporation
Intel Corp.
PROM
Intel, Corp.
Part No. DD28F032SA DD28F032SA-080 DD28F032SA-070 DD28F032SA-100 DD28F032SA-150
Description 32-mbit (2 mbit X 16/ 4 mbit X 8) FlashFile MEMORY
32-mbit (2 mbit X 16, 4 mbit X 8) FlashFileMEMORY
32-mbit (2 mbit X 16, 4 mbit X 8) FlashFile MEMORY 4M X 8 FLASH 12V PROM, 100 ns, PDSO56
File Size 719.71K  /  49 Page

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    ST Microelectronics
STMicroelectronics N.V.
意法半导
Part No. M29F200T-55M1R M29F200T-55M3R M29F200T-55N1R M29F200T-55N3R M29F200T-55N6R M29F200T-55M6R M295V200B-120M6R M295V200B-120N6R M295V200T-120N6R M295V200T-120M6R M29F200B-120N6R M29F200B-120M6R M29F200T-120M6R M29F200T-120N6R M29F200B-120N3TR M295V200B-120N3TR M29F200T-120M3TR M295V200T-120M3TR M295V200B-120M3TR M29F200B-120M3TR M295V200T-120N3TR M29F200T-120N3R M295V200T-120M3R M295V200T-120N3R M295V200T-55M3R M295V200T-55N3R M295V200T-70M3R M295V200T-70N3R M29F200T-120M3R M295V200T-90M3R M295V200T-90N3R M295V200B-70N1R M295V200B-70M1R M295V200B-55N6R M295V200T-55N6R M295V200T-90N6TR M295V200T-55N6TR M295V200T-120N6TR M295V200T-70N6TR M29F200T-90N6TR M29F200T-90M6TR M295V200B-120M1R M295V200B-120M1TR M295V200B-120M3R M295V200B-55M1R M295V200B-55M1TR M29F200B-90M3TR M29F200B-70M3TR M29F200B-55M3TR M29F200B-55M3R M29F200T-120M1R M29F200B-90M1R M29F200B-70M1R M29F200T-120N1R M295V200T-70M1R M29F200T-120N6TR M29F200T-55N6TR M29F200T-55N1TR M295V200B-90M3R M295V200B-90M3TR M295V200B-90N3TR M295V200B-55N3R M29F200B-55M6TR M295V200B-70N3TR M295V200T-70N3TR M29F200T-120N3TR M295V200T-55M1TR M295V200B-70M3TR M29F200B-90N6R M29F200T-70M6R M295V200T-90M6TR M295V200T-90M6R M295V200B-120N3R M295V2
Description Single SVS For 3.3V Systems W/Programmable Time Delay 8-PDIP -40 to 125 2兆位56Kb x828KB的x16插槽，启动座单电源闪
Adjustable Single SVS W/Programmable Time Delay 8-PDIP -40 to 125 2兆位56Kb x828KB的x16插槽，启动座单电源闪
2 mbit 256Kb x8 or 128Kb x16 / Boot Block Single Supply Flash Memory
Single 2-Input Positive-NOR Gate 5-SOT-23 -40 to 85 2兆位56Kb x828KB的x16插槽，启动座单电源闪
Single 2-Input Positive-OR Gate 5-SOT-23 -40 to 85 2兆位56Kb x828KB的x16插槽，启动座单电源闪
2 mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory 2兆位256Kb x828KB的x16插槽，启动座单电源闪
Single 2-Input Positive-NOR Gate 5-SOT -40 to 85 2兆位56Kb x828KB的x16插槽，启动座单电源闪
Single Inverter Buffer/Driver with Open-Drain Output 5-SOT-23 -40 to 85 2兆位56Kb x828KB的x16插槽，启动座单电源闪
CONNECTOR ACCESSORY 连接器附
2 mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory 2兆位56Kb x828KB的x16插槽，启动座单电源闪
Single Positive-Edge-Triggered D-Type Flip-Flop with Clear and Preset 8-US8 -40 to 85
Single Positive-Edge-Triggered D-Type Flip-Flop 5-SOT-23 -40 to 85
Micropower Supply voltage Supervisor 8-TSSOP
Adjustable Single SVS W/Programmable Time Delay 8-PDIP -40 to 85
Adjustable Single SVS W/Programmable Time Delay 8-TSSOP -40 to 85
Single SVS For 3.3V Systems W/Programmable Time Delay 8-TSSOP
Single SVS For 3.3V Systems W/Programmable Time Delay 8-SOIC -40 to 85
Micropower Supply voltage Supervisor 8-PDIP -40 to 85
Single Power SVS (5v) W/Pgmmable Time Delay & Push-Pull Outputs 8-CDIP -55 to 125
16-Bit Edge-Triggered D-Type Flip-Flop With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85
Single 2-Input Positive-NAND Gate 5-SC70 -40 to 85
8-Bit, 0.1 us Dual MDAC, Parallel Input, Fast Control Signalling for DSP 20-SOIC 0 to 70
8-Bit, 0.1 us Dual MDAC, Parallel Input, Fast Control Signalling for DSP, Easy Micro I/F 20-PDIP -25 to 85
File Size 232.32K  /  33 Page

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    IS25CD010 IS25LD020 IS25CD512

List of Unclassifed Manufacturers
List of Unclassifed Man...
Part No. IS25CD010 IS25LD020 IS25CD512
Description 512Kbit/1 mbit / 2 mbit Single Operating voltage Serial Flash Memory
512Kbit/1 mbit / 2 mbit Single Operating voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface
File Size 778.52K  /  40 Page

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    意法半导
STMicroelectronics N.V.
Part No. M36W108AT120ZM6T M36W108AB100ZM6T M36W108AT100ZM6T M36W108AB120ZM6T M36W108AB100ZM5T
Description Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:FEP; Leaded Process Compatible:Yes RoHS Compliant: Yes
low-Smoke Zero-Halogen (LSZH) Shipboard Precision low-Loss Serial Analog & Digital Video Coax Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid RoHS Compliant: Yes
8 mbit 1Mb x8, Boot Block Flash Memory and 1 mbit 128Kb x8 SRAM low voltage Multi-Memory Product 81兆8，启动块闪存1兆位128KB的x8 SRAM的低电压多媒体存储产
File Size 256.94K  /  36 Page

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    M27C2001 M27C2001-10B1TR M27C2001-10B1X M27C2001-10B6TR M27C2001-10B6X M27C2001-10C1TR M27C2001-10C1X M27C2001-10C6TR M2

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. M27C2001 M27C2001-10B1TR M27C2001-10B1X M27C2001-10B6TR M27C2001-10B6X M27C2001-10C1TR M27C2001-10C1X M27C2001-10C6TR M27C2001-10C6X M27C2001-10F1TR M27C2001-10F1X M27C2001-10F6TR M27C2001-10F6X M27C2001-10L1TR M27C2001-10L1X M27C2001-10L6TR M27C2001-10L6X M27C2001-10N1TR M27C2001-10N1X M27C2001-10N6TR M27C2001-10N6X M27C2001-10XB1TR M27C2001-10XB1X M27C2001-10XB6TR M27C2001-10XB6X M27C2001-10XC1TR M27C2001-1 2383 M27C2001-20XF1TR M27C2001-20XF1X M27C2001-20XF6TR M27C2001-20XF6X M27C2001-12XC6TR M27C2001-12XC6X M27C2001-15XN1TR M27C2001-15XN1X M27C2001-25F6TR M27C2001-25F6X M27C2001-12XB1TR M27C2001-12XB1X M27C2001-12XB6TR M27C2001-12XB6X M27C2001-12XC1TR M27C2001-25N6TR M27C2001-25N6X M27C2001-15XN6TR M27C2001-15XN6X M27C2001-15XB1TR M27C2001-15XB1X M27C2001-15XC1TR M27C2001-15XC1X M27C2001-20L1TR M27C2001-20L1X M27C2001-20L6TR M27C2001-20L6X M27C2001-25B1TR M27C2001-25B1X M27C2001-20XB1TR M27C2001-20XB1X M27C2001-20XB6TR M27C2001-20XB6X M27C2001-20XC1TR M27C2001-20XC1X M27C2001-20XC6TR M27C2001-25XN1TR M27C2001-25XN1X M27C2001-25XN6TR M27C2001-25XN6X M27C2001-10XC6TR M27C200199 M27C2001-10XC6X M27C2001-12L1TR M27C2001-12L1X M27C2001-12L6TR M27C2001-12L6X M27C2001-70XC6TR M27C2001
Description    2 mbit (256Kb x 8) uv EPROM and OTP EPROM
2 mbit 256Kb x 8 uv EPROM and OTP EPROM
From old datasheet system
1 mbit 128Kb x8 uv EPROM and OTP EPROM
File Size 112.40K  /  16 Page

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    ST Microelectronics
意法半导
STMicroelectronics N.V.
Part No. M48T129 M48T129Y-70PM1 M48T129V-85CS1 M48T129Y-85CS1 M48T129V-85PM1 M48T129V-70PM1 M48T129V-70CS1 M48T129Y-70CS1
Description 3.3V-5V 1 mbit 128Kb x8 TIMEKEEPER SRAM
Safety Sign; Legend:Danger Chlorine; External Height:7"; External Width:10"; Body Material:Polyester; Color:Red/Black RoHS Compliant: NA 3.3 - 5V兆位的SRAM 128KB的x8计时
File Size 143.61K  /  22 Page

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    M27C202-80F1 M27C202-70K6 M27C202-120F6 M27C202-90K3TR M27C202-80N3 M27C202-80N1 STMICROELECTRONICS-M27C202-70F3

STMICROELECTRONICS
ST Microelectronics
Part No. M27C202-80F1 M27C202-70K6 M27C202-120F6 M27C202-90K3TR M27C202-80N3 M27C202-80N1 STMICROELECTRONICS-M27C202-70F3
Description 128K X 16 OTPROM, 80 ns, PDSO40
128K X 16 OTPROM, 90 ns, PQCC44
128K X 16 uvPROM, 100 ns, CDIP40
2 mbit (128KB X16) uv EPROM AND OTP EPROM
File Size 160.15K  /  17 Page

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    LXT971ABE M25P64-VME6P M25P64-VMF6P M27C400206 M27W80106 M28W640FCB70N1E M28W640FCT70N1E M28W640FCT85N1E M28W640FCT06 M2

1N4728A
STMICROELECTRONICS[STMicroelectronics]
Part No. LXT971ABE M25P64-VME6P M25P64-VMF6P M27C400206 M27W80106 M28W640FCB70N1E M28W640FCT70N1E M28W640FCT85N1E M28W640FCT06 M29F400BT06 M40Z30005 M41T8106 M41T81M6F M41T81 M41T81M6E
Description Series One Watt Zeners
64 mbit, low voltage, Serial Flash Memory With 50MHz SPI Bus Interface
4 mbit (256Kb x16) uv EPROM and OTP EPROM
8 mbit 1Mb x8 low voltage uv EPROM and OTP EPROM
64 mbit (4Mbx16, Boot Block) 3V Supply Flash memory
4 mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory
5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs
Serial access Real-Time Clock with alarm
File Size 236.66K  /  30 Page

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    Chingis Technology
Part No. PM25LD512 PM25LD010 PM25LD020
Description 512Kbit/1 mbit / 2 mbit Single Operating voltage Serial Flash Memory
File Size 645.90K  /  33 Page

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Price & Availability of 1 mbit 128kb x8 low voltage uv

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