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Advanced Semiconductor, Inc.
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| Part No. |
HF5-12F
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| OCR Text |
...c = 50 ma 36 v bv ebo i e = 5.0 ma 4.0 v i ces v ce = 15 v 5.0 ma h fe v ce = 5.0 v i c = 1.0 a 10 200 --- c ob v cb = 12...12f description: the asi hf5-12f is designed for features: p g = 20 db min. at 5 w/30 mhz i... |
| Description |
NPN SILICON RF POWER TRANSISTOR
NPN Silicon RF Power Transistor(Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0V)(NPN 硅型射频功率晶体Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0V)) HF BAND, Si, NPN, RF POWER TRANSISTOR
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| File Size |
17.47K /
1 Page |
 View
it Online |
Download Datasheet
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ASI[Advanced Semiconductor]
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| Part No. |
HF20-12F
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| OCR Text |
... TJ T STG JC 4.5 A 36 V 18 V 4.0 V 80 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +150 OC 2.2 C/W
O
PACKAGE STYLE .380" 4L FLANGE
1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER
CHARACTERISTICS
SYMBOL
BV CBO BV CES BV CEO BV EBO ICES hFE... |
| Description |
NPN SILICON RF POWER TRANSISTOR
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| File Size |
18.20K /
1 Page |
View
it Online |
Download Datasheet |
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Advanced Semiconductor, Inc.
ADVANCED SEMICONDUCTOR INC
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| Part No. |
HF50-12F
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| OCR Text |
...ce = 15 v 10 ma h fe v ce = 5.0 v i c = 5.0 a 10 --- --- c ob v cb = 12.5 v f = 1.0...12f description: the asi hf50-12f is designed for features: p g = 16 db min. at 50 w/30 mhz ... |
| Description |
NPN Silicon RF Power Transistor(Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)) HF BAND, Si, NPN, RF POWER TRANSISTOR
NPN Silicon RF Power Transistor(Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)(NPN 纭??灏??????朵?绠?Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V))
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| File Size |
17.42K /
1 Page |
View
it Online |
Download Datasheet |
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