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IRF[International Rectifier]
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| Part No. |
SD700C
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| OCR Text |
... I2t for fusing voltage
2810 0.88
KA2s
t = 0.1 to 10ms, no voltage reapplied (16.7% x x IF(AV) < I < x IF(AV)), TJ = TJ max.
V...046 Single Side Double Side 0.008 0.014 0.019 0.027 0.046 0.008 0.014 0.019 0.028 0.046
Units
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| Description |
STANDARD RECOVERY DIODES Hockey Puk Version
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| File Size |
144.70K /
6 Page |
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it Online |
Download Datasheet
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Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
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| Part No. |
SGF9
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| OCR Text |
...e mounting is available.
.05 0 1.8
0.5 0.05
2
1.8 0 .05
2
1 0.4
+0.1 0.1 --0.015
0.02
0 to 0.1
Specifications
Abs...046 0.046 0.041 0.037 0.036 0.033 0.033 0.034 0.025 0.027 0.024 0.021 Mason's U dB 26.521 24.262 22.... |
| Description |
For C to X-band Local Oscillator and Amplifier
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| File Size |
65.47K /
8 Page |
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it Online |
Download Datasheet |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MRF282 MRF282S MRF282Z
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| OCR Text |
...S PD Tstg TJ
Value 65 20 60 0.34 - 65 to +150 200
Unit Vdc Vdc Watts W/C C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resis...046 ID, 26 AWG, Enamel 3 Turns, 0.048 ID, 25 AWG, Enamel
R1, R2, R3, R4, R5, R6 Z1 Z2 Z3 Z4 Z5 Z6... |
| Description |
LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
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| File Size |
140.31K /
11 Page |
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it Online |
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MACOM[Tyco Electronics]
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| Part No. |
MAPL-000817-015CPC-072706
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| OCR Text |
...Source Breakdown Voltage (VGS = 0 Vdc, ID = 30 Adc) Gate Quiescent Voltage (Vds = 26 Vdc, Id = 100 mA) Drain-Source On-Voltage (Vgs = 10 Vdc...046" Distributed Microstrip Element, 0.092" x 0.046" Distributed Microstrip Element, 0.532" x 0.046"... |
| Description |
RF Power Field Effect Transistor LDMOS, 800-1700 MHz, 15W, 26V
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| File Size |
195.54K /
5 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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