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				TRANSYS Electronics Limited
Part No.	1SS422
OCR Text	...VF IR CT trr Min. Typ. Max. 1.2 0.1 3.0 4 Unit V A pF ns Conditions IF=150mA VR=85V VR=0.5V, f=1MHZ VR=6V,IF=10mA,RL=100 Typical Characteristics 1SS422
Description	Plastic-Encapsulated Diodes
File Size	97.28K / 2 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	1SS422
OCR Text	...tions Low forward voltage VF = 0.23 V (typ.)@IF = 5 mA * Small package suitable for mounting on a small space Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristic Maximum (peak) reverse voltage Reverse voltage Maximum (peak) for...
Description	High-Speed Switching Applications
File Size	134.81K / 3 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	1SS423
OCR Text	...e Low forward voltage: VF (3) = 0.56 V (typ.) Low reverse current: IR = 5 A (max) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristic Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward ...
Description	Ultra-High-Speed Switching Applications
File Size	128.31K / 3 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	1SS424
OCR Text	... Low forward voltage : VF (3) = 0.50 V (typ.) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristic Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10 ms) Power ...
Description	High-Speed Switching Applications
File Size	119.65K / 3 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC
Part No.	2MBI150UB-120
OCR Text	....90 - 2.15 - 1.75 - 2.00 - 17 - 0.36 - 0.21 - 0.03 - 0.37 - 0.07 - 1.75 - 1.85 - 1.60 - 1.70 - - - 0.97 Unit Max. 2.0 400 8.5 2.25 - 2.10 - - 1.20 0.60 - 1.00 0.30 2.05 - 1.90 - 0.35 - mA nA V V Input capacitance Turn-on time nF s ...
Description	IGBT Module U-Series 1200V / 150A 2 in one-package
File Size	101.08K / 4 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SA129607 2SA1296
OCR Text	...aturation voltage: VCE (sat) = -0.5 V (max) @IC = -2 A Complementary to 2SC3266. Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base c...
Description	Power Amplifier Applications Power Switching Applications
File Size	362.35K / 3 Page	View it Online	Download Datasheet

				TRANSYS Electronics Limited
Part No.	2SA1296
OCR Text	0.75 W (Tamb=25) 2. COLLECTOR TRANSISTOR (PNP) TO-92 1. EMITTER Collector current : -2 A ICM Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range TJ, Tstg: -55 to +150 3. BASE 123 ELECT...
Description	Plastic-Encapsulated Transistors
File Size	60.63K / 1 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SA129707 2SA1297
OCR Text	...aturation voltage: VCE (sat) = -0.5 V (max) @IC = -2 A Complementary to 2SC3267. Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base c...
Description	Power Amplifier Applications Power Switching Applications
File Size	375.38K / 3 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SA129807
OCR Text	...aturation voltage: VCE (sat) = -0.4 V (max) (IC = -500 mA, IB = -20 mA) Suitable for driver stage of small motor Complementary to 2SC3265 Small package Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage ...
Description	Low Frequency Power Amplifier Application Power Switching Applications
File Size	306.81K / 4 Page	View it Online	Download Datasheet

				TRANSYS Electronics Limited
Part No.	2SA1318
OCR Text	...NSISTOR (PNP) TO-92 PCM : 0.5 W (Tamb=25) 2. COLLECTOR Collector current : -0.2 A ICM Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range TJ, Tstg: -55 to +150 3. BASE 123 ELECTRICA...
Description	Plastic-Encapsulated Transistors
File Size	60.04K / 1 Page	View it Online	Download Datasheet

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