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  0.0017 Datasheet PDF File

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    2N3904CSM

SemeLAB
SEME-LAB[Seme LAB]
Part No. 2N3904CSM
OCR Text ...ILITY APPLICATIONS FEATURES 0.51 0.10 (0.02 0.004) 0.31 rad. (0.012) * SILICON PLANAR EPITAXIAL NPN TRANSISTOR * HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) * CECC SCREENING OPTIONS A 1.40 (0.055) max. 2.54 0....
Description GENERAL PURPOSE NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
General Purpose NPN Transistor In a Hermetic Surface Mount Package For High Reliability Application(通用NPN晶体管(高可靠性、表贴型封装

File Size 20.62K  /  2 Page

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    2N3904

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. 2N3904
OCR Text ...DC current gain CONDITIONS IE = 0; VCB = 30 V IC = 0; VEB = 6 V VCE = 1 V; note 1 IC = 0.1 mA IC = 1 mA IC = 10 mA IC = 50 mA IC = 100 mA VCEsat VBEsat Cc Ce fT F collector-emitter saturation voltage IC = 10 mA; IB = 1 mA; note 1 IC = 50 mA...
Description NPN switching transistor

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    2N5401

NXP Semiconductors
Philips Semiconductors
Part No. 2N5401
OCR Text ...DC current gain CONDITIONS IE = 0; VCB = -120 V IE = 0; VCB = -120 V; Tamb = 100 C IC = 0; VEB = -4 V IC = -1 mA; VCE = -5 V; see Fig.2 IC = -10 mA; VCE = -5 V; see Fig.2 IC = -50 mA; VCE = -5 V; see Fig.2 VCEsat Cc fT F collector-emitter s...
Description PNP high-voltage transistor

File Size 43.55K  /  8 Page

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    2N5884 2N5886 5054

STMICROELECTRONICS[STMicroelectronics]
Part No. 2N5884 2N5886 5054
OCR Text ...j Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c 25 o C Storage Temperature Max. Operating Junction Tempera...
Description From old datasheet system
COMPLEMENTARY SILICON HIGH POWER TRANSISTORS

File Size 67.99K  /  4 Page

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    2SA1859 2SA1859A

SANKEN[Sanken electric]
Part No. 2SA1859 2SA1859A
OCR Text ... VEB=-6V IC=-10mA VCE=-10V, IC=-0.7A IC=-0.7A, IB=-70mA VCE=-12V, IE=0.7A VCB=-10V, f=1MHz Conditions External Dimensions FM20(TO220F) 4.00.2 10.10.2 4.20.2 2.8 c0.5 2SA1859 2SA1859A -10max -150 -10max -180min -150min 60 to 240 -1.0m...
Description Silicon PNP Transistor
Silicon PNP Epitaxial Planar Transistor(Audio Output Driver and TV Velocity-modulation)

File Size 22.81K  /  1 Page

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    2SB1548 2SB1548A 2SD2374A 2SD2374

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1548 2SB1548A 2SD2374A 2SD2374
OCR Text ...13.70.2 4.20.2 1.40.2 1.60.2 0.80.1 3.00.5 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with...
Description Silicon PNP epitaxial planar type(For power amplification)

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    2SC1623 2SC1623L5 2SC1623L6

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. 2SC1623 2SC1623L5 2SC1623L6
OCR Text ...t Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) * High Voltage: VCEO = 50 V ABSOLUTE MAXIMUM RATINGS PACKAGE DIMENSIONS in millimeters 2.8 0.2 0.4 +0.1 -0.05 1.5 0.65 +0.1 -0.15 0.95 Maximum Voltages and Current (TA = 25 C) Co...
Description FILTER PLATE 音频通用放大器NPN硅外延晶体管微型模具
SC70/&#181;DFN, Single/Dual Low-Voltage, Low-Power &#181;P Reset Circuits 晶体
BJT
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

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    2SC1921

HITACHI[Hitachi Semiconductor]
Part No. 2SC1921
OCR Text ...- -- -- -- 130 3 Max -- -- -- 1.0 300 1.0 -- 4 V MHz pF Unit V V V A Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCE = 120 V, RBE = VCE = 6 V, IC = 10 mA I C = 10 mA, IB = 1 mA VCE = 6 V, IC = 10 mA VCB = 6 V, ...
Description Silicon NPN Triple Diffused

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    2SC2547 2SC2545 2SC2546

HITACHI[Hitachi Semiconductor]
Part No. 2SC2547 2SC2545 2SC2546
OCR Text ...IEBO 1 2SC2546 Max -- -- -- 0.1 0.1 Min 90 90 5 -- -- Typ Max -- -- -- -- -- -- -- 0.6 90 3.0 0.5 -- -- -- 0.1 0.1 1200 0.2 -- -- -- -- 2SC2547 Min 120 120 5 -- -- 250 -- -- -- -- -- Typ Max -- -- -- -- -- -- -- 0.6 90 3.0 0.5 -- -- ...
Description Silicon NPN Epitaxial

File Size 40.54K  /  8 Page

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    2SC3356 2SC3356S 2SC3356R24 2SC3356R25 2SC3356R23 2SC3356-VM 2SC3356-T1B 2SC3356-T2B

NEC[NEC]
NEC Corp.
NEC, Corp.
Part No. 2SC3356 2SC3356S 2SC3356R24 2SC3356R25 2SC3356R23 2SC3356-VM 2SC3356-T1B 2SC3356-T2B
OCR Text ...d good current characteristic. 0.4 -0.05 +0.1 PACKAGE DIMENSIONS (Units: mm) 2.80.2 1.5 0.65 -0.15 +0.1 FEATURES * Low Noise and High Gain 0.95 0.95 2.90.2 NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz...
Description For amplify low noise and high frequency
MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR)
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-346
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
SC70/&#181;DFN, Single/Dual Low-Voltage, Low-Power &#181;P Reset Circuits 晶体管|晶体管|叩| 12V的五(巴西)总裁| 100mA的一(c)|的SOT - 346

File Size 100.80K  /  8 Page

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