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x4-bank Datasheet PDF File

For x4-bank Found Datasheets File :: 1304 Search Time::0.828ms
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				FUJITSU[Fujitsu Media Devices Limited]
Part No.	MB90P634A MB90P634APF MB90P634APFV MB90632A MB90632APF MB90632APFV MB90634A MB90634APF MB90634APFV
OCR Text	...onversion time (at 4 MHz with a x4 multiplier) RC successive approximation, 8 channels (multiplexed inputs) 8-bit resolution R-2R type, 2 ch...bank register Data bank register User stack bank register System stack bank register Additional data...
Description	16-bit Proprietary Microcontroller
File Size	498.80K / 107 Page	View it Online	Download Datasheet

				MOSEL[Mosel Vitelic, Corp]
Part No.	V54C365164VD V54C365164
OCR Text	...d Array (or BGA) WBGA SDRAM (X4/X8/X16) 56 PINS ASSIGNMENT (Top View) X4 X8 VSS VSSQ DQ6 NC VSSQ DQ4 NC NC CLK - A9 A7 A5 VSS DQ15 DQ14 ...Bank 0 Column decoder Sense amplifier & I(O) bus Bank 1 Column decoder Sense amplifier & I(...
Description	HIGH PERFORMANCE 225/200/166/143 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16
File Size	614.70K / 56 Page	View it Online	Download Datasheet

				MOSEL[Mosel Vitelic, Corp]
Part No.	V54C365404VD
OCR Text	...gh. One DQM input it present in x4 SDRAMs. Power and ground for the input buffers and the core logic. VCC, VSS Supply VDDQ VSSQ Supply --...bank designated by BS0, BS1 signals. 4. Device state is Full Page Burst operation 5. Power Down Mode...
Description	HIGH PERFORMANCE 143/133/125 MHz 3.3 VOLT 16M X 4 SYNCHRONOUS DRAM 4 BANKS X 4Mbit X 4
File Size	553.87K / 54 Page	View it Online	Download Datasheet

				MOSEL[Mosel Vitelic, Corp]
Part No.	V54C365804VC
OCR Text	...gh. One DQM input is present in x4 and x8 DRAMs. Power and ground for the input buffers and the core logic. VCC, VSS Supply VCCQ VSSQ Sup...bank designated by BS0, BS1 signals. 4. Device state is Full Page Burst operation 5. Power Down Mode...
Description	HIGH PERFORMANCE 143/133/125 MHz 3.3 VOLT 8M X 8 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 8
File Size	449.79K / 54 Page	View it Online	Download Datasheet

				MOSEL[Mosel Vitelic, Corp]
Part No.	V54C365804VD
OCR Text	...gh. One DQM input is present in x4 and x8 DRAMs. Power and ground for the input buffers and the core logic. VCC, VSS Supply VCCQ VSSQ Sup...bank designated by BS0, BS1 signals. 4. Device state is Full Page Burst operation 5. Power Down Mode...
Description	HIGH PERFORMANCE 143/133/125 MHz 3.3 VOLT 8M X 8 SYNCHRONOUS DRAM 4 BANKS X 2Mbit X 8
File Size	552.94K / 54 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	M312L2920BG0 M312L2920BG0-A2 M312L2920BG0-B0 M312L2920BG0-CB3 M312L2923BG0-A2 M312L2923BG0-B0 M312L2923BG0-CB3 M312L5720BG0-CB3 M312L5720BG0-A2 M312L5720BG0-B0
OCR Text	x4, x8) with 1,200mil Height & 72-bit ECC Revision 1.1 August. 2003 Rev. 1.1 August. 2003 1GB, 2GB Registered DIMM Revision Histor...Bank Select Address Data input/output Data Strobe input/output Clock input Clock enable input Chip s...
Description	TVS UNIDIRECT 1500W 150V SMC TVS 1500W 15V UNIDIRECT SMC DDR SDRAM Registered Module DDR SDRAM的注册模
File Size	272.02K / 18 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	M312L2920BT M312L2920BTS-A2 M312L2920BTS-CAA M312L2923BTS-A2 M312L2923BTS-CAA M383L2920BTS-A2 M383L2920BTS-CAA M383L2923BTS-A2 M383L2923BTS-CAA M383L6523BTS-A2 M383L5628BT1-CAA M312L5628BT0-CAA M383L5628BT1-A2 M312L5628BT0-A2 M312L6523BTS-CAA M383L6523BTS-CAA M312L6523BTS-A2
OCR Text	...ered DIMM based on 512Mb B-die (x4, x8) Ordering Information Part Number M383L6523BTS-CAA/A2/B0/A0 M383L2923BTS-CAA/A2/B0/A0 M383L2920BTS-...Bank Select Address Data input/output Data Strobe input/output Clock input Clock enable input Chip s...
Description	DDR SDRAM Registered Module
File Size	257.60K / 23 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	M2V28S20ATP M2V28S20ATP-6 M2V28S20ATP-6L M2V28S20ATP-7 M2V28S20ATP-7L M2V28S20ATP-8 M2V28S20ATP-8L M2V28S30ATP M2V28S30ATP-6 M2V28S30ATP-6L M2V28S30ATP-7 M2V28S30ATP-7L M2V28S30ATP-8 M2V28S30ATP-8L M2V28S40ATP M2V28S40ATP-6 M2V28S40ATP-6L M2V28S40ATP-7 M2V28S40ATP-7L M2V28S40ATP-8 M2V28S40ATP-8L A99009
OCR Text	... 2nd. gen. 0 : Random Column 2: x4, 3: x8, 4: x16 Package Type Process Generation Function Organization Synchronous DRAM Density Interfac...BANK x 8,388,608-WORD x 4-BIT) (4-BANK x 4,194,304-WORD x 8-BIT) (4-BANK x 2,097,152-WORD x 16-BIT) ...
Description	128M Synchronous DRAM From old datasheet system
File Size	622.79K / 51 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	M2V28S20TP M2V28S20TP-6 M2V28S20TP-7 M2V28S20TP-8 M2V28S30TP M2V28S30TP-6 M2V28S30TP-7 M2V28S30TP-7L M2V28S30TP-8 M2V28S30TP-8L M2V28S40TP M2V28S40TP-6 M2V28S40TP-7 M2V28S40TP-7L M2V28S40TP-8 M2V28S40TP-8L A99003
OCR Text	...100<3-2-2> - PC133(-6) supports x4/x8 only. And does not support Low-Power (L) version. - Fully synchronous operation referenced to clock rising edge - 4-bank operation controlled by BA0,BA1(Bank Address) - /CAS latency- 2/3 (programmable) ...
Description	128M Synchronous DRAM From old datasheet system
File Size	635.64K / 52 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	M2V64S20BTP-6 M2V64S20TP M2V64S30BTP-6 M2V64S30TP M2V64S40BTP-6 M2V64S40TP A99002_B S40B
OCR Text	...64S20BTP is organized as 4-bank x4,194,304-word x 4-bit,and M2V64S30BTP is organized as 4-bank x 2097152-word x 8-bit ,and M2V64S40BTP is organized as 4-bank x 1048576-word x 16-bit Synchronous DRAM with LVTTL interface. All inputs and outp...
Description	From old datasheet system 4-BANK x 2097152-WORD x 8-BIT 64M bit Synchronous DRAM
File Size	651.79K / 52 Page	View it Online	Download Datasheet

For x4-bank Found Datasheets File :: 1304 Search Time::0.828ms
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