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For vges Found Datasheets File :: 2571    Search Time::4.547ms    
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    FMG2G75US120

FAIRCHILD[Fairchild Semiconductor]
Part No. FMG2G75US120
OCR Text ...te Maximum Ratings Symbol VCES vges IC ICM (1) IF IFM PD TSC TJ TSTG VISO Mounting Torque TC = 25C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Con...
Description Molding Type Module

File Size 496.50K  /  7 Page

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    VII100-06P1 VIO100-06P1 VDI100-06P1 VID100-06P1 IXYSCORP-VIO100-06P1

IXYS[IXYS Corporation]
Part No. VII100-06P1 VIO100-06P1 VDI100-06P1 VID100-06P1 IXYSCORP-VIO100-06P1
OCR Text ...16 IK10 IGBTs Symbol VCES vges IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol TC = 25C TC = 80C VGE = 15 V; RG = 15 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 15 ; TVJ = 125C non-repetitive TC = 25C...
Description IGBT Modules: Boost Configurated IGBT Modules
2-WIRE FIELD PROGRAMMABLE W/TIN PLATING

File Size 93.93K  /  2 Page

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    HGTG11N120CND

FAIRCHILD[Fairchild Semiconductor]
Part No. HGTG11N120CND
OCR Text .... . . . . . . . . . . . . . . . vges Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . ....
Description 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 108.55K  /  8 Page

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    HGTG24N60D1D

INTERSIL[Intersil Corporation]
Part No. HGTG24N60D1D
OCR Text .... . . . . . . . . . . . . . . . vges Switching Safe Operating Area at TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA Diode Forward Current at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description 3.3V 36-mc CPLD
24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode
24A/ 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode

File Size 35.26K  /  5 Page

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    HGTG24N60D1

INTERSIL[Intersil Corporation]
Part No. HGTG24N60D1
OCR Text .... . . . . . . . . . . . . . . . vges Switching Safe Operating Area at TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description 24A/ 600V N-Channel IGBT
24A, 600V N-Channel IGBT

File Size 32.04K  /  4 Page

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    HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N120BNST

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N120BNST
OCR Text .... . . . . . . . . . . . . . . . vges Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . ....
Description 1200V, NPT Series N-Channel IGBT; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape &amp; Reel 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB
35A/ 1200V/ NPT Series N-Channel IGBT
35A, 1200V, NPT Series N-Channel IGBT
35 A, 1200 V, NPT N-Channel IGBT

File Size 175.79K  /  8 Page

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    HGTP10N40F1D HGTP10N50F1D

INTERSIL[Intersil Corporation]
Part No. HGTP10N40F1D HGTP10N50F1D
OCR Text .... . . . . . . . . . . . . . . . vges Diode Forward Current at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF25 at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF90 Power Dissipation Total...
Description 10A 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

File Size 33.70K  /  5 Page

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    HGTP12N60A4D HGT1S12N60A4DS HGTG12N60A4D HGTG12N60A4DNL HGTP12N60A4DNL

Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP12N60A4D HGT1S12N60A4DS HGTG12N60A4D HGTG12N60A4DNL HGTP12N60A4DNL
OCR Text .... . . . . . . . . . . . . . . . vges Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . ....
Description    600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 54 A, 600 V, N-CHANNEL IGBT, TO-247
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk

File Size 170.23K  /  8 Page

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    HGTP12N60A4 HGT1S12N60A4S9A HGTG12N60A4 FAIRCHILDSEMICONDUCTORCORP-HGTP12N60A4NL

Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP12N60A4 HGT1S12N60A4S9A HGTG12N60A4 FAIRCHILDSEMICONDUCTORCORP-HGTP12N60A4NL
OCR Text .... . . . . . . . . . . . . . . . vges Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . ...
Description 600V SMPS Series N-Channel IGBT
600V, SMPS Series N-Channel IGBTs 54 A, 600 V, N-CHANNEL IGBT, TO-247
600V/ SMPS Series N-Channel IGBTs
600 V, SMPS N-Channel IGBT

File Size 180.89K  /  8 Page

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    HGTP12N60B3D HGT1S12N60B3DS HGTG12N60B3D HGT1S12N60B3DS9A

Fairchild Semiconductor
Part No. HGTP12N60B3D HGT1S12N60B3DS HGTG12N60B3D HGT1S12N60B3DS9A
OCR Text .... . . . . . . . . . . . . . . . vges Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . ...
Description 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
27A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB

File Size 202.82K  /  7 Page

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