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  vf1.1v Datasheet PDF File

For vf1.1v Found Datasheets File :: 97    Search Time::0.875ms    
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    MAS3795

Micronas
Part No. MAS3795
OCR Text ... Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time Detection efficiency * Conditions VR = 30 V IF = 1 mA...1V Terminal capacitance Ct (pF) 103 2.0 102 1.5 10 1.0 1 0.5 10-1 -40 ...
Description SILICON EPITAXIAL PLANAR TYPE

File Size 75.25K  /  3 Page

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    MA3X704D MA3X704E

Panasonic Semiconductor
Part No. MA3X704D MA3X704E
OCR Text ... Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 M...1V 10 1 1 10-1 0 0 5 10 15 20 25 30 10-2 -40 0 40 80...
Description SILICON EPITAXIAL PLANAR TYPE

File Size 45.91K  /  2 Page

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    PANASONIC[Panasonic Semiconductor]
Part No. MA781 MA3S781
OCR Text ... Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time Detection efficiency * Conditions VR = 30 V IF = 1 mA...1V Terminal capacitance Ct (pF) 102 2.5 2.0 10 1.5 1 1.0 10-1 0.5 1...
Description Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
SILICON EPITAXIAL PLANAR TYPE

File Size 66.04K  /  3 Page

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    MBR0530 MBR0530-CA2-R MBR0530-CB2-R MBR0530L-CA2-R MBR0530L-CB2-R

UNISONIC TECHNOLOGIES CO LTD
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
Part No. MBR0530 MBR0530-CA2-R MBR0530-CB2-R MBR0530L-CA2-R MBR0530L-CB2-R
OCR Text ...everse Recovery Time SYMBOL BVR VF1 VF2 IR1 IR2 CT tRR TEST CONDITIONS IR=130A IF=0.1A IF=0.5A VR=15V VR=30V VR=1V, f=1MHz IF=IR=10mA, RL=100, recover to 0.1 x IR MIN 30 TYP MAX 0.375 0.430 20 130 170 4 UNIT V V A pF ns UNISONIC TECHNOLO...
Description SCHOTTKY RECTIFIER DIODE 0.5 A, 30 V, SILICON, SIGNAL DIODE

File Size 79.23K  /  3 Page

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    UNISONIC TECHNOLOGIES CO LTD
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
Part No. MBR0540-CA2-R MBR0540-CB2-R MBR0540L-CA2-R MBR0540 MBR0540L-CB2-R
OCR Text ...everse Recovery Time SYMBOL BVR VF1 VF2 IR1 IR2 CT tRR TEST CONDITIONS IR=20A IF=0.5A IF=1A VR=20V VR=40V VR=1V, f=1MHz IF=IR=10mA, RL=100, recover to 0.1 x IR MIN 40 TYP MAX 0.51 0.62 10 20 170 4 UNIT V V A pF ns UNISONIC TECHNOLOGIES C...
Description SCHOTTKY RECTIFIER DIODE 0.5 A, 40 V, SILICON, SIGNAL DIODE

File Size 79.84K  /  3 Page

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    PANASONIC[Panasonic Semiconductor]
Part No. MA198 MA3X198
OCR Text ...arameter Forward voltage Symbol VF1 VF2 Reverse current Terminal capacitance Reverse recovery time* IR Ct trr IF = 100 A IR = 100 mA VR = 40...1V 1.2 10 0.8 10 -1 1 0.4 10 -2 -40 0 0 40 80 120 160 200 0 10 20 ...
Description    Silicon epitaxial planar type

File Size 68.12K  /  3 Page

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    PANASONIC[Panasonic Semiconductor]
Part No. MA3X717D MA3X717E
OCR Text ... Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 M...1V 102 10 1 0 5 10 15 20 25 30 10-1 -40 0 40 80 120 ...
Description Silicon epitaxial planar type

File Size 45.93K  /  2 Page

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    Matsshita / Panasonic
Part No. MA198
OCR Text ... Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 40 V IF = 100 A IR = 100 mA VR = 6 V, f = 1 ...1V 1.2 10 0.8 10-1 1 0.4 10-2 -40 0 0 40 80 120 160 200 ...
Description Switching Diodes

File Size 68.97K  /  3 Page

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