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For vec Found Datasheets File :: 1730    Search Time::4ms    
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    CM400DU-12H09

Mitsubishi Electric Semiconductor
Part No. CM400DU-12H09
OCR Text ...elay time tf Turn-off fall time vec(Note 2) Emitter-collector voltage trr (Note 2) Reverse recovery time Qrr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance (Note 5) Rth(j-c)R Rth(c-f) Contact thermal resistance Note 1. 2. ...
Description IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

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    CM200E3U-12H09

Mitsubishi Electric Semiconductor
Part No. CM200E3U-12H09
OCR Text ... Cres QG td (on) tr td (off) tf vec (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R VFM trr Qrr Rth(j-c) Rth(c-f) Note 1. 2. 3. 4. 5. 6. (Tj = 25C, unless otherwise specified) Item Collector cutoff current Gate-emitter thresho...
Description IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

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    CM100TU-24H09

Mitsubishi Electric Semiconductor
Part No. CM100TU-24H09
OCR Text ...elay time tf Turn-off fall time vec(Note 2) Emitter-collector voltage trr (Note 2) Reverse recovery time Qrr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance (Note 5) Rth(j-c)R Rth(c-f) Contact thermal resistance Min -- 4.5 ...
Description IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

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    CM100TU-12H09

Mitsubishi Electric Semiconductor
Part No. CM100TU-12H09
OCR Text ...elay time tf Turn-off fall time vec(Note 2) Emitter-collector voltage trr (Note 2) Reverse recovery time Qrr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance (Note 5) Rth(j-c)R Rth(c-f) Contact thermal resistance Min -- 4.5 ...
Description IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

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    CM100E3U-12H09 CM100E3U-12H

Mitsubishi Electric Semiconductor
Part No. CM100E3U-12H09 CM100E3U-12H
OCR Text ... Cres QG td (on) tr td (off) tf vec (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R VFM trr Qrr Rth(j-c) Rth(c-f) Note 1. 2. 3. 4. 5. 6. (Tj = 25C, unless otherwise specified) Item Collector cutoff current Gate-emitter thresho...
Description IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

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    CM200DX-24A

Mitsubishi Electric Semiconductor
Part No. CM200DX-24A
OCR Text .... 6) Tj = 25C Tj = 125C Chip vec(Note.3) Emitter-collector voltage Rlead Rth(j-c)Q Rth(j-c)R Rth(c-f) RGint RG IE = 200A, VGE = 0V Module lead resistance Main terminals-chip, per switch Thermal resistance per IGBT (Note. 1) per free w...
Description IGBT MODULES HIGH POWER SWITCHING USE

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    CM200DU-34KA

Mitsubishi Electric Semiconductor
Part No. CM200DU-34KA
OCR Text ... nF nC ns ns C V V C/W vec(Note 1) Emitter-collector voltage Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q Thermal resistance*1 Contact thermal resistance Thermal resistance Note 1. IE, vec, trr, Qrr, die/dt represent characteristics ...
Description HIGH POWER SWITCHING USE

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    CM200DU-34KA09

Mitsubishi Electric Semiconductor
Part No. CM200DU-34KA09
OCR Text ...f) tf trr (Note 1) Qrr (Note 1) vec(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacit...
Description IGBT MODULES HIGH POWER SWITCHING USE

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    CM200DU-12NFH

Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
Part No. CM200DU-12NFH
OCR Text ...f) tf trr (Note 1) Qrr (Note 1) vec(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q RG Parameter Collector cutoff current (Tj = 25C) Test conditions VCE = VCES, VGE = 0V IC = 20mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 200A, VG...
Description From old datasheet system
HIGH POWER SWITCHING USE 大功率开关使

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    CM200DU-12H09

Mitsubishi Electric Semiconductor
Part No. CM200DU-12H09
OCR Text ...elay time tf Turn-off fall time vec(Note 2) Emitter-collector voltage trr (Note 2) Reverse recovery time Qrr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance (Note 5) Rth(j-c)R Rth(c-f) Contact thermal resistance Min -- 4.5 ...
Description IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

File Size 95.35K  /  4 Page

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