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InternationalRectifier
IRF[International Rectifier]
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| Part No. |
20ETS12STRR 20ETS08 20ETS08S 20ETS08STRL 20ETS08STRR 20ETS12 20ETS12S 20ETS12STRL 20ETS..SSERIES
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| OCR Text |
...RR M A p plie d Fo llo w ing Su rg e . Initial T J = 150 C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
250
200
200
150
150
100 2 0 E TS.. Se rie s 50 1 10 100
Nu m b er O f E qu a l Am p litu de H alf C y c le C u rre nt Pu lse s (... |
| Description |
INPUT RECTIFIER DIODE
1200V 20A Std. Recovery Diode in a D2-Pakpackage
1200V 20A Std. Recovery Diode in a TO-220AC (2-Pin)package
20ETS12/20ETS12S
800V 20A Std. Recovery Diode in a D2-Pakpackage
800V 20A Std. Recovery Diode in a TO-220AC (2-Pin)package
From old datasheet system
SURFACE MOUNTABLE INPUT RECTIFIER DIODE
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| File Size |
174.42K /
7 Page |
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FUJI[Fuji Electric]
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| Part No. |
2SK3679-01MR
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| OCR Text |
...vs. ID t=f(ID):Vcc=600V,VGS=10V,RG=10
700
Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=90V
IAS=4A
600 tf 500 10
2
td(off)
IAS=6A
EAS [mJ]
0 1
400
t [ns]
300
IAS=9A
td(on) 10
1
... |
| Description |
N-CHANNEL SILICON POWER MOSFET
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| File Size |
115.76K /
4 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT20M10JFLL
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| OCR Text |
...ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W ID = ID [Cont.] @ 25C MIN TYP
2
ns
MAX
UNIT Amps Volts V/ns ns
185 740 1.3 5 250 500
(VGS = 0V, IS = -ID [Cont.])
Tj = 25C Tj = 25C
Tj = 125C
0.9 2.5 12 20
Tj = 125C Tj =... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
53.46K /
2 Page |
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it Online |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM100TF-12H
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| OCR Text |
..., IC = 100A, VGE1 = VGE2 = 15V, RG = 6.3 VGE = 0V, VCE = 10V, f = 1MHz Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 0.27 Max....316
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100TF-1... |
| Description |
Six-IGBT IGBTMOD 100 Amperes/600 Volts
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| File Size |
65.51K /
4 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDA79N15
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| OCR Text |
...acteristics VDD = 75V, ID = 79A RG = 25
(Note 4, 5)
------(Note 4, 5)
VDS = 120V, ID = 79A VGS = 10V
--
Drain-Source Diode Char...316 1.4 ---
A A V ns C
1. Repetitive Rating: Pulse width limited by maximum junction temperatu... |
| Description |
150V N-Channel MOSFET
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| File Size |
840.90K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
GB25RF120K
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| OCR Text |
...IC = 25A, VCC = 600V VGE = 15V, RG = 10, L = 400H TJ = 25C
CT4 7 CT1
e
IC = 25A, VCC = 600V VGE = 15V, RG = 10, L = 400H TJ = 125C
9,11 CT4 WF1,2 10,12 CT4 WF1 WF2
e
IC = 25A, VCC = 600V VGE = 15V, RG = 10, L = 400H TJ = 125... |
| Description |
IGBT PIM MODULE
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| File Size |
777.55K /
13 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRGB4064DPBF
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| OCR Text |
...IC = 10A, VCC = 400V, VGE = 15V RG = 22, L = 1.0mH, TJ = 25C
Energy losses include tail & diode reverse recovery CT4
IC = 10A, VCC = 400V, VGE = 15V RG = 22, L = 1.0mH, TJ = 25C
CT4
IC = 10A, VCC = 400V, VGE = 15V RG=22, L=1.0mH, TJ... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
367.91K /
10 Page |
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it Online |
Download Datasheet |
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