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IXYS
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| Part No. |
IXFX140N25T
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| OCR Text |
...m/lb.in. f c mounting force (plus247) 20..120 /4.5..27 n/lb. weight to-264 10 g plus247 6 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) ... |
| Description |
GigaMOS Power MOSFET
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| File Size |
158.26K /
5 Page |
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it Online |
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IXYS
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| Part No. |
IXGK35N120C IXGX35N120C
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| OCR Text |
...dard packages jedec to-264 and plus247 tm low switching losses, low v (sat) mos gate turn-on - drive simplicity applications ac motor speed control dc servo and robot drives dc choppers uninterruptible power supplies (ups) switched-... |
| Description |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
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| File Size |
1,842.72K /
2 Page |
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it Online |
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IXYS CORP
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| Part No. |
GX60N60C2D1
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| OCR Text |
...10 nm/lb.in. weight to-264 10 g plus247 6 g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s g = gate c = collector e = emitter tab = collector features ? very high frequency igbt and anti-parallel fre... |
| Description |
Fast SRAM > Late Write Synchronous SRAM; Organization (word): 512K; Organization (bit): x 36; Memory capacity (bit): 16M; Supply voltage (V): 150; Operating temperature (°C): 1.5; Package: BGA (119)
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| File Size |
615.83K /
5 Page |
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IXYS
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| Part No. |
IXFK50N50 IXFN50N50 IXFN55N50 IXFK55N50
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| OCR Text |
...ntrinsic rectifier advantages ? plus247 package for clip or spring bar mounting ? easy to mount ? space savings ? high power density g = gate d = drain s = source tab = drain either source terminal at minibloc can be used as main or kel... |
| Description |
Discrete MOSFETs: HiPerFET Power MOSFETS
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| File Size |
573.60K /
4 Page |
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it Online |
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Price and Availability
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