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    2SB790 2SD969

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PANASONIC[Panasonic Semiconductor]
Part No. 2SB790 2SD969
OCR Text .../IB=10 600 VCE=-2V 320 fT -- I E VCB=-10V Ta=25C Base to emitter saturation voltage VBE(sat) (V) 500 Transition frequency fT (MHz) -1 -3 -10 -30 -10 -3 25C -1 75C Ta=-25C Forward current transfer ratio hFE 280 240 200...
Description Silicon PNP epitaxial planer type(Silicon PNP epitaxial planer type)

File Size 36.83K  /  2 Page

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    2SB792 2SB792A 2SD814 2SA1310 2SB0792A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB792 2SB792A 2SD814 2SA1310 2SB0792A
OCR Text ...ype Package Marking symbol : I(2SB792) 2F(2SB792A) s Electrical Characteristics Parameter Collector cutoff current Collector to emitt...type package, allowing downsizing of the equipment and automatic insertion through the tape packing ...
Description Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)

File Size 36.47K  /  2 Page

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    2SB819

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SB819
OCR Text .../IB=10 600 VCE=-5V 240 fT -- I E VCB=-5V Ta=25C Base to emitter saturation voltage VBE(sat) (V) 500 Transition frequency fT (MHz) -1 -3 -10 -30 -10 -3 25C -1 75C Ta=-25C Forward current transfer ratio hFE 200 400 ...
Description Silicon PNP epitaxial planer type(For low-frequency output amplification) 1500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR

File Size 46.30K  /  3 Page

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    2SB873 2SB0873

PANASONIC[Panasonic Semiconductor]
Part No. 2SB873 2SB0873
OCR Text ...VCE=-2V Ta=75C 500 25C fT -- I E VCB=-6V Ta=25C Forward current transfer ratio hFE Transition frequency fT (MHz) -1 -3 -10 200 400 160 300 -25C 120 - 0.3 - 0.1 - 0.03 200 80 100 40 - 0.01 - 0.0...
Description Silicon PNP epitaxial planer type(For low-frequency power amplification)

File Size 36.32K  /  2 Page

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    2SB956 2SD1280 2SB0956

PANASONIC[Panasonic Semiconductor]
Part No. 2SB956 2SD1280 2SB0956
OCR Text ...00 VCE=-2V 500 450 500 fT -- I E VCB=-6V Ta=25C Base to emitter saturation voltage VBE(sat) (V) 25C -1 Ta=-25C 75C Transition frequency fT (MHz) -1 -3 -10 -3 Forward current transfer ratio hFE 400 350 300 250 200 150 ...
Description Silicon PNP epitaxial planer type(For low-frequency power amplification)

File Size 37.76K  /  2 Page

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    2SB970 2SB0970

PANASONIC[Panasonic Semiconductor]
Part No. 2SB970 2SB0970
OCR Text ...C 200 VCE=-2V 180 500 fT -- I E VCB=-10V Ta=25C Forward current transfer ratio hFE Transition frequency fT (MHz) -1 -3 -10 160 140 120 100 80 60 40 20 400 Ta=75C 25C -25C 300 - 0.3 - 0.1 - 0.03 Ta=75C 25C -25C ...
Description Silicon PNP epitaxial planer type(For low-voltage output amplification)

File Size 36.21K  /  2 Page

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    2SB976

PANASONIC[Panasonic Semiconductor]
Part No. 2SB976
OCR Text ...hFE -- IC 240 VCE=-2V fT -- I E VCB=-6V Ta=25C Forward current transfer ratio hFE Transition frequency fT (MHz) -1 -3 -10 800 700 600 500 Ta=75C 400 300 200 100 0 - 0.01 - 0.03 - 0.1 - 0.3 25C -25C 200 160 120 - 0...
Description Silicon PNP epitaxial planer type(For low-frequency output amplification)

File Size 34.79K  /  2 Page

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    2SC1384 2SC1383

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SC1384 2SC1383
OCR Text ...1.2 VCE=10V Ta=25C 1.0 IC -- I B Collector power dissipation PC (W) 1.0 1.25 Collector current IC (A) 0.8 1.0 8mA 7mA 6mA 5mA 4mA Collector current IC (A) IB=10mA 9mA 0.8 0.6 0.75 0.6 0.4 0.5 ...
Description Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification) 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

File Size 46.40K  /  3 Page

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    2SC3931

PANASONIC[Panasonic Semiconductor]
Part No. 2SC3931
OCR Text ... VCE 12 VCE=6V Ta=25C IC -- I B Collector power dissipation PC (mW) Collector current IC (mA) 160 8 80A Collector current IC (mA) 18 8 60A 6 40A 120 6 80 4 4 20A 2 40 2 0 0 20 40 60 80...
Description Silicon NPN epitaxial planer type(For high-frequency amplification)

File Size 55.77K  /  3 Page

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    2SC5002

SANKEN[Sanken electric]
Part No. 2SC5002
OCR Text ... 6.5g a. Type No. b. Lot No. I C - VCE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at)( V) 7 1.5 A VCE(sat)-IC Characteristics (Typical) 3 (I C: I B= 5 :1) I C - VBE Temperature Characteristics (Typic...
Description Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output, Switching Regulator and General Purpose)
Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output/ Switching Regulator and General Purpose)

File Size 23.63K  /  1 Page

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