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  high power rf ldmos field effe Datasheet PDF File

For high power rf ldmos field effe Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    MAPLST2122-060CF

Tyco Electronics
Part No. MAPLST2122-060CF
Description rf power field effect Transistor ldmos, 2110 - 2170 MHz, 60W, 28V

File Size 168.31K  /  5 Page

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    NXP Semiconductors N.V.
Part No. BLF573S BLF573
Description HF / VHF power ldmos transistor
A 300 W ldmos rf power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.
HF - VHF power ldmos transistor

File Size 140.63K  /  16 Page

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    0809LD30

Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
Part No. 0809LD30
Description Compant high-Insulation power Relay, Polarized, 10A 30瓦,28V的,1 GHz的ldmos的场效应
30 Watt / 28V / 1 Ghz ldmos FET
30 WATT 28V 1 GHz ldmos FET
30 WATT, 28V, 1 GHz ldmos FET

File Size 16.67K  /  1 Page

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    MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MRF6S9045N MRF6S9045NBR1 MRF6S9045NR1 MRF9200LR306 MRF9200LSR3 MW5IC2030

FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
Part No. MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 Mrf6S9045N Mrf6S9045NBR1 Mrf6S9045NR1 Mrf9200LR306 Mrf9200LSR3 MW5IC2030MBR106 MW5IC2030NBR1065 MW6IC2015GNBR1 MW6IC2015NBR1 NE76184A-TI MJE3055T MJE2955T
Description    COMPLEMENTARY SILICON power TRANSISTORS
COMPLEMETARY SILICON power TRANSISTORS
SILICON NPN TRANSISTOR
high VOLTAGE PNP power TRANSISTOR
SILICON NPN power DARLINGTON TRANSISTOR
rf power field effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
rf ldmos Wideband Integrated power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, power TRANSISTOR, TO-220AB

File Size 57.87K  /  4 Page

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    PTF180101 PTF180101S

INFINEON[Infineon Technologies AG]
Part No. PTF180101 PTF180101S
Description ldmos rf power field effect Transistor 10 W 1805-1880 MHz 1930-1990 MHz 10 W 2110-2170 MHz
ldmos rf power field effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz
ldmos rf power field effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz

File Size 306.52K  /  10 Page

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    PTFA041501GL PTFA041501HL

Infineon Technologies AG
Part No. PTFA041501GL PTFA041501HL
Description Thermally-Enhanced high power rf ldmos FETs 150 W, 420 ??500 MHz
Thermally-Enhanced high power rf ldmos FETs 150 W, 420 ?500 MHz
UHF BAND, Si, N-CHANNEL, rf power, MOSFET

File Size 416.30K  /  11 Page

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    0809LD30P

Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
Part No. 0809LD30P
Description Compant high-Insulation power Relay, Polarized, 10A
30 Watt / 28V / 1 Ghz ldmos FET
30 WATT 28V 1 GHz ldmos FET
30 WATT, 28V, 1 GHz ldmos FET

File Size 15.67K  /  1 Page

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    0809LD60P

Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
Part No. 0809LD60P
Description Compant high-Insulation power Relay, Polarized, 10A 60瓦,28V的,1 GHz的ldmos的场效应
60 Watt / 28V / 1 Ghz ldmos FET
60 WATT, 28V, 1 GHz ldmos FET

File Size 15.64K  /  1 Page

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    BLF6G22-180RN BLF6G22LS-180RN

NXP Semiconductors N.V.
Part No. BLF6G22-180RN BLF6G22LS-180RN
Description 180 W ldmos power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
power ldmos transistor S BAND, Si, N-CHANNEL, rf power, MOSFET
power ldmos transistor BLF6G22-180RN<SOT502A (ldmosT)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
power ldmos transistor BLF6G22-180RN<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;

File Size 90.26K  /  11 Page

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    BLF4G20LS-110B

Philips Semiconductors
NXP Semiconductors N.V.
Part No. BLF4G20LS-110B
Description From old datasheet system
UHF power ldmos transistor 110 W ldmos power transistor for base station applications at frequencies

File Size 100.62K  /  12 Page

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