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STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
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| Part No. |
M24C16-BN6TP M24C16-BN6TG M24C16-BN6TG_W M24C16-BN6T_G M24C16-BN6TP_G M24C16-BN3TP_G M24C16-BN6TG_G M24C16-BN6T_W M24C16-BN6TP_W M24C16-BN3TP_W M24C08-WMN6T M24C02-WMN3T M24C02-WMN3TG_W M24C02-WMN3TP_G M24C02-WMN3TP_W M24C08 M24C16-MB3T M24C16-MB3T_G M24C16-MB3T_W M24C16-MB3TG M24C16-MB3TG_G M24C16-MB3TG_W M24C16-MB3TP M24C16-MB3TP_G M24C16-MB3TP_W M24C16-MB6T M24C16-MB6T_G M24C16-MB6T_W M24C16-MB6TG M24C16-MB6TG_G M24C16-MB6TG_W M24C16-MB6TP M24C16-MB6TP_G M24C16-MB6TP_W M24C16-MN3T M24C16-MN3T_G M24C16-MN3T_W M24C16-MN3TG M24C16-MN3TG_G M24C16-MN3TG_W M24C16-MN3TP M24C16-MN3TP_G M24C16-MN3TP_W M24C16-MN6T M24C16-MN6T_G M24C16-MN6T_W M24C16-MN6TG M24C16-MN6TG_G M24C16-MN6TG_W M24C16-MN6TP M24C16-MN6TP_G M24C16-MN6TP_W M24C04-RMN3T M24C04-RMN3T_G M24C04-RMN3T_W M24C04-RMN3TG M24C04-RMN3TG_G M24C04-RMN3TG_W M24C04-RMN3TP M24C04-RMN3TP_G M24C04-RMN3TP_W M24C04-RMN6T M24C04-RMN6T_G M24C04-RMN6T_W M24C04-RMN6TG M24C04-RMN6TG_G M24C04-RMN6TG_W M24C04-RMN6TP M24C04-RMN6TP_G M24C04-RMN6TP_W M24C16-WMN6T M24C16-RMN6T M24C04-MN6T M24C04-MN6T_G M24C04-MN6T_W M24C04-MN6TG M24C04-MN6TG_G M24C04-MN6TG_W M24C04-MN6TP M24C04-MN6TP_G M24C04-MN6TP_W M24C16-WMN6T_G M24C16-WMN6T_W M24C16-WMN6TG M24C1
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| Description |
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM
45 V, 100 mA NPN general-purpose transistors
General purpose PIN diode
12-Bit, 2.5 us Dual DAC, Serial Input, Pgrmable Settling Time, Simultaneous Update, Low Power 8-CDIP -55 to 125
8-Bit Constant-Current LED Sink Driver 16-TSSOP -40 to 125
Removal Tool, Han D; RoHS Compliant:N/A RoHS Compliant: Yes
CRIMP SET 0.14 - 0.50MM ;
NPN 1 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; fT: 1 GHz; Frequency: 4.5 MHz; IC: 25 mA; Noise figure: 4.5@f1 dB; Ptot: 300 mW; Polarity: NPN ; VCEO max: 15 V
16-Channel LED Driver 100-HTQFP -20 to 85
8-Bit Constant-Current LED Sink Driver 16-SOIC -40 to 125
8-Bit, 10 us Quad DAC, Serial Input, Pgrmable for 1x or 2x Output, Simultaneous Update, Low Power 14-SOIC -40 to 85
Microprocessor Crystal; Frequency:20MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes
8-Bit, 10 us Quad DAC, Serial Input, Pgrmable for 1x or 2x Output, Simultaneous Update, Low Power 14-PDIP -40 to 85
ER 4C 4#4 PIN RECP WALL
8-Bit, 10 us Octal DAC, Serial Input, Pgrmable for 1x or 2x Output, Simultaneous Update, Low Power 16-SOIC 0 to 70
Power LDMOS transistor
Three quadrant triacs guaranteed commutation - IGT: 25 mA; IT (RMS): 16 A; VDRM: 600 V
18-Bit Registered Transceiver With 3-State Outputs 56-SSOP -40 to 85
45 V, 500 mA PNP general purpose transistors - fT min: 80 MHz; hFE max: 250 ; hFE min: 100 ; IC max: 500 mA; Polarity: PNP ; Ptot max: 625 mW; VCEO max: 45 V
ER 4C 4#4 SKT RECP WALL
Replaced by TLV5734 : 8-Bit, 20 MSPS ADC Triple Ch., Digital Clamp for YUV/NTSC/PAL, Output Data Format Mux, Low Power 64-LQFP -20 to 75
8-Bit, 10 us Octal DAC, Serial Input, Pgrmable for 1x or 2x Output, Simultaneous Update, Low Power 16-SOIC -40 to 85
NPN 1 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; fT: 1 GHz; Frequency: 4.5 MHz; IC: 25 mA; Noise figure: 4.5@f1 dB; Ptot: 300 mW; Polarity: NPN ; VCEO max: 15 V
Dual N-channel dual gate MOSFET - ID: 30 mA; IDSS: 100 (max) mA; VDSmax: 6 V
ER 23C 16 12 8 4 PIN RECP WALL
D87 - CONNECTOR ACCESSORY
ER 5C 3#12 2#0 SKT RECP WALL
Silicon planar diode - Cd max.: 1.0@VR=20V pF; IF max: 100 mA; RD @ IF=5 mA AND F=200 MHz max: 0.7 Ohm; RS max: 0.7 ; VR max: 35 V
Triple high-speed switching diodes - Cd max.: 1.5 pF; Configuration: triple isolated ; IF max: 200 mA; IFSM max: 4.5 A; IR max: 1000@VR=75V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V
NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; Noise figure: 3@f22@f1 dB; Ptot: 300 mW; Polarity: NPN ; Socket: IF ; System frequency: 9
P-channel enhancement mode vertical D-MOS transistor - Configuration: Single P-channel ; ID DC: 0.2 A; RDS(on): 12000@10V mOhm; VDSmax: 240 V
Removal Tool Han E Crimpcontacts in E Mo; RoHS Compliant:N/A
PNP 5 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 70 mA; fT: 5 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 100 mA; Ptot: 1000 mW; Polarity: PNP ; VCE: 10 V; VThree quadrant triacs guaranteed commutation - IGT: 25 mA; IT (RMS): 16 A; VDRM: 600 V
PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 0.7 A; Number of pins: 3 ; RDS(on): 0.2 mOhm; VDSmax: 50 V
Silicon RF switches - [S21(Off)]2 min: 30 ; [S21(On)]2 max: 3 ; ID: 10 mA; IGSS max: 100 nA; Mode: depl. ; RDS(on): 20 Ohm; S21(off): 30 dB; S21(on): 3 dB; VDSmax: 3 V; VSG max: 7 V
Schottky barrier double diodes - Cd max.: 60@VR=4V pF; Configuration: dual series ; IF: 1 A; IFSM max: 10 A; IR max: 0.35@VR=60V mA; VFmax: 650@IF=1A mV; VR: 60 V
High-speed double diode - Cd max.: 2.5 pF; Configuration: dual isolated ; IF max: 200 mA; IFSM max: 9 A; IR max: 100@VR=60V nA; IFRM: 600 mA; trr max: 6 ns; VFmax: 1@IF=200mA mV; VR max: 60 V
Schottky barrier double diodes - Cd max.: 60@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 0.35@VR=60V mA; VFmax: 650@IF=1A mV; VR: 60 V
High-speed diode - Cd max.: 1 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1000@VR=75V nA; IFRM: 500 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 75 V
NPN general purpose double transistor - Description: Current Mirror
ER 30C 24#16 6#12 SKT RECP WAL
45 V, 500 mA PNP general purpose transistors - fT min: 80 MHz; hFE max: 250 ; hFE min: 100 ; IC max: 500 mA; Polarity: PNP ; Ptot max: 625 mW; VCEO max: 45 V
ER 35C 28#16 7#12 SKT RECP WAL
ER 35C 28#16 7#12 PIN RECP WAL
Dual high-voltage switching diodes
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
PowerMOS transistor TOPFET high side switch 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
CONNECTOR ACCESSORY 连接器附
8-Bit, 10 us Quad DAC, Serial Input, Pgrmable for 1x or 2x Output, Simultaneous Update, Low Power 14-SOIC 0 to 70 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
Replaced by TLC5733A : 20 MSPS 3-Ch. ADC with Clamp 64-LQFP -20 to 75 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
TOPFET high side switch SMD version 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
Silicon Bi-directional Trigger Device 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
For Use With:Harting Han D Contacts; Crimp Tool:Service Crimping Tool with Locator; Wire Size (AWG):26-16; Leaded Process Compatible:Yes 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
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| File Size |
173.56K /
29 Page |
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it Online |
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意法半导
EEPROM
STMicroelectronics N.V.
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| Part No. |
M24C08-W M24C08-R M24C08-WMN6 M24C08-WMN6TP M24C04WMN1T M24C04WMN3T M24C04WMN6T M24C02-WMN3_S M24C02-WMN3G_S M24C02-WMN3P M24C02-WMN3P_S M24C02-WMN3T_S M24C02-WMN3TG_S M24C02-WMN6_W M24C04-WMN6 M24C04-LBN6T M24C04-LBN3T M24C02 M24C01 M24C08 M24C04-LMN3T M24C04-LMN6T M24C08-RBN6 M24C08-RBN3/W M24C08-RBN6/W M24C08-RBN6T M24C08-RBN3P M24C08-RBN3T M24C08-RBN6G M24C08-RBN6/S M24C08-RBN3/S M24C08-RBN3G M24C08-RBN6P M24C16-DW6T M24C16-DW3T M24C16-SDW6T M24C16-SDW3T M24C16-SDS3T M24C16-SDS6T M24C04-WBN6TP/W M24C08-MN6T M24C08-MN3T M24C02-WBN6T/W M24C04-RMN3T/W M24C04-RBN6TP/W M24C04-WBN6TP/S M24C08-WDS3 M24C08-WDS3G M24C08-WDS6 M24C08-WMN6TP/W M24C08-WDW6P M24C04-RMN6TP/S M24C08-WDS6G M24C08-WDS6P M24C08-WDW6G M24C08-WDW3 M24C08-RBN6T/W M24C08-WDW3P M24C08-WDS3/W M24C04-RMN3TP/S M24C08-WDW3G M24C08-WDS3/S M24C01-RBN6TP/W M24C08-WDS3P M24C01-WMN3TP/S M24C01-WDW6TP/S M24C01-WMN6TP/S M24C01-RBN3TP/S M24C04-RBN6T/W M24C04-RDS3G M24C04-WBN6T/W M24C04-RDS6P M24C04-RDW3 M24C04-RDW6 M24C04-WMN6TP/W M24C04-RDS6T M24C04-RDS3T M24C04-RDS6G M24C02-WMN3/S M24C02-WMN6/W M24C08-WBN3G/S M24C16-WBN3G/S M24C16-RBN3G/S M24C01-RBN3G/S M24C01-WBN3G/S M24C02-RBN3G/S M24C02-WBN3G/S M24C04-RBN3G/S M24C04-WBN3G/S
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| Description |
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM
Microprocessor Crystal; Frequency:22.1184MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes
Microprocessor Crystal; Frequency:48MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
CRYSTAL 9.84375MHZ 10PF SMD
UHF power transistor
NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; VCEO max: 8 V
CRYSTALS 20/0.035 -40 85 12.5P 32.768KHZ 3.2X1.5X0.8MM 2 PAD
MMIC variable gain amplifier
AB 3C 3#12 SKT RECP
Microprocessor Crystal; Frequency:8.192MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Microprocessor Crystal; Frequency:8MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz, with voltage regulator
Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
XTL, OSC, 50.000 MHZ, 100PPM
Microprocessor Crystal; Frequency:27MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes
Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
CONNECTOR ACCESSORY
PNP/PNP matched double transistors
IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,SIP
AB 17C 17#16 PIN RECP
45 V, 100 mA NPN general-purpose transistors
NPN/PNP general purpose transistor - Description: Matched Pair
IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,M:ML043MW015
CRYSTAL 4.897MHZ 20PF SMD
Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V
Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V
POT 200 OHM 3/4 RECT CERM MT
Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V
Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 600 V
Microprocessor Crystal; Frequency:50MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Microprocessor Crystal; Frequency:6MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Microprocessor Crystal; Frequency:5MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:50ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pins: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V
Solder Masking Agent; Dispensing Method:Jar; Features:For Lead-Free Applications; Used w/Tin/Lead Solders; Provides Short-Term High-Temp. Protection; Leaded Process Compatible:Yes; Volume:1gallon (US) RoHS Compliant: Yes
CRYSTAL 6.7458MHZ 20PF SMD
Microprocessor Crystal; Frequency:3.579545MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:180ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes
RES ARRAY 24 OHM 8TRM 4RES SMD
SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR - 15kV/us; Package: SOIC-W; No of Pins: 8; Container: Box
NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; @ IC: 14 mA; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; GUM @ f2: 8 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; Noise figure: 3@f22.1@f1 dB; Ptot: 300
High-speed switching diodes - Cd max.: 1.5 pF; Configuration: quad c.c./c.c. ; IF max: 250 mA; IFSM max: 4 A; IR max: 500@VR=80V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V
Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V
Low-leakage diode - Cd max.: 2 pF; Configuration: single ; IF max: 200 mA; IFSM max: 4 A; IR max: 5@VR=75V nA; IFRM: 500 mA; trr max: 3000 ns; VFmax: 1@IF=10mA mV; VR max: 75 V
Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V
NPN 7GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 100 mA; fT: 7 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 150 mA; Ptot: 1000 mW; Polarity: NPN ; VCE: 10 V; VThyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V
NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; VCEO max: 8 V
Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual series ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Thyristors logic level - IGT: 0.2 mA; IT (RMS): 8 A; VDRM: 500 V
Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V
Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
Schottky barrier diode - Cd max.: 90@VR=0V pF; Configuration: single ; IF: 0.5 A; IFSM max: 2 A; IR max: 0.1@VR=35V mA; VFmax: 550@IF=0.5A mV; VR: 40 V
AB 4C 4#12 PIN PLUG
Single 12 bits ADC, up to 40 MHz, 55 MHz or 70 MHz
Silicon PIN diode
NPN 14 GHz wideband transistor
PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pins: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V
HDWR PLATE SER 3 FRNT MNT BLK
OSCILLATORS 50PPM 0 70 3.3V 4 33.000MHZ TS 5X7MM 4PAD SMD
Thyristors; logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 1.0 A; VDRM: 600 V
Thyristor logic level - IGT: 0.05 mA; IT (RMS): 0.8 A; VDRM: 400 V; VRRM: 400 V
Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 200 V
Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 400 V
16KbitKbitKbitKbit1Kbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
8-Pin SOIC High Speed - 10 MBit/s Logic Gate Output Optocoupler 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOS
HDWR SPACER REAR MNT SER 3 BLK 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
AB 7C 7#12 PIN PLUG 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
RECTIFIER SBR DUAL 40A 40V 280A-ifsm 530mV-vf 0.5mA-ir ITO-220AB 50/TUBE 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
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| File Size |
144.80K /
25 Page |
View
it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
Sumida, Corp.
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| Part No. |
M38220M7MGP M38222MADHP M38220EADHP M38221M8XXXHP M38221M9DXXXGP M38221M8MXXXFP M38221M8HXXXGP M38221MCFP M38221MCDXXXHP M38225M6HP M38225M6HGP M38225M6HFP M38225M6HXXXFP M38225M6HXXXGP M38225M6HXXXHP M38225M6HHP M38225M6HXXXFS M38223EADHP M38223E1DHP M38224EADHP M38222EADHP M38223E8FP M38223E8FS M38221M5-HP M38225M5-HP M38225M6-FP M38227M5-GP M38221M7-FS M38224M5-GP M38225M7-FS M38222M6-FS M38222M5-GP M38223M5-HP M38221M6-FS M38226M5-HP M38221M7-FP M38220M6-FS M38221M5-GP M38226M6-FS M38225M7-FP M38220M5-GP M38222M7-FP M38224M7-FS M38220M7-FS M38226M7-FS M38225M6-FS M38227M7-FP M38223M7-FS M38220M5-HP M38226M7-FP M38224M6-FS M38223M7-FP M38221M6-FP M38225M5-GP M38224M6-FP M38223M6-FS M38222M6-FP M38226M5-GP M38222M5-HP M38220M7-FP M38222M7-FS M38227M7-FS M38227M6-FP M38226M6-FP M38224M5-HP M38227M6-FS M38224M7-FP M38220M6HFS M38220M6HXXXFP M38220M6HGP M38220M6HXXXGP M38220M6HFP M38220M6HHP M38220M6HP M38220M6HXXXFS M38220M6HXXXHP M38220E4-GP M38222M4-GP M38223M4-GP M38221E4-GP M38226M4-GP M38224M4-GP M38225M4-GP M38225E4-GP M38222E4-GP M38220M4-GP M38221M4-GP M38223E4-GP M38225M5FS M38223MBHP M38223MBFS M38223MBFP M38226M3-HP M38221E3-FS M38222M3-HP M38227M3-HP M38225M3-HP M38223M
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| Description |
SS49E Series Economical Linear Position Sensors; radial lead IC package
Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:25-24
: Low ; Serial interface: 2xUARTI2C2xSPI2xCAN ; Series: LPC2200 family ; Special features: 2x CANJTAG; ETM ; System frequency: 0~60 MHz; Timers: 4 x
: 16384 bytes; Reset active: Low ; Serial interface: 2xUARTI2C2xSPI2xCAN ; Series: LPC2200 family ; Special features: 2x CAN0 WS Exec. from int
: 16384 bytes; Reset active: Low ; Serial interface: 2xUARTI2C2xSPI ; Series: LPC2200 family ; Special features: 0 WS Exec. from int. FlashJTAG; ETM
; Reset active: Low ; Serial interface: 2xUARTI2C2xSPI ; Series: LPC2200 family ; Special features: JTAG; ETM ; System frequency: 0~60 MHz; Timers: 4 x
Circular Connector; No. of Contacts:37; Series:LJT06R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular
SOCKET, D, IDC, 37WAY; Connector type:D Sub; Gender:Socket; Ways, No. of:37; Mating cycles, No. of:250; Termination method:IDC; Material, contact
8-bit microcontroller with accelerated two-clock 80C51 core 8 kB/16 kB 3 V byte-erasable flash with 10-bit ADC
IAR KS2103-02 Kickstart Board with on-board j-link
MCB213x (Keil Evaluation Board)
GASKET, 4 WAY; For use with:Har-link Connectors; Series:Har-link RoHS Compliant: Yes
RES-ARRAY 22K-OHM 4-ELEMENT 5% 0.063W CONVEX THK-FILM SMD-1206 TR-7-PA
WLAN ADK Wireless LAN Application Development Kit (ADYA)
MCB2100-U (Keil Evaluation Board ULINK)
RES-ARRAY 220-OHM 4-ELEMENT 5% 0.063W CONVEX THK-FILM SMD-1206 TR-7-PA
BRACKET, 4 WAY; For use with:Har-link Connectors; Series:Har-link RoHS Compliant: Yes
Han 10 B Hood Top Entry M20 RoHS Compliant: NA
FlexRay bus ESD protection diode
8-bit I2C and SMBus I/O port with interrupt, 2-kbit EEPROM and 6 address pins - # of Addresses: 64 ; I2C-bus: 400 kHz; Interrupt: 0-1 ; Max Sink
8-bit I2C and SMBus I/O port with 2-kbit EEPROM - # of Addresses: 8 ; I2C-bus: 400 kHz; Max Sink Current per bit: 25 mA; Max Sink Current, per
CONN RJ45 JACK-JACK CAT5E
RES-ARRAY 33-OHM 4-ELEMENT 5% 0.063W CONVEX THK-FILM SMD-1206 TR-7-PA
RES-ARRAY 300-OHM 4-ELEMENT 5% 0.063W CONVEX THK-FILM SMD-1206 TR-7-PA
CONNECTOR 110 WAY SHIELDED AMP 352068-1
Aluminum Electrolytic Capacitor; Capacitor Type:Computer Grade; Voltage Rating:50VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:72000uF RoHS Compliant: Yes
Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:25-29
Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:25-29
1120KBITS BRAM 800000 SYSTEM GATES 556 I - NOT RECOMMENDED for NEW DESIGN
CONN RCPT 16POS .100 SGL STR PCB
BUSSMANN DIVISION / TCF15 15A CUBE FUS/FINGER SAFE
N-channel TrenchMOS (tm) transistor - Configuration: Single N-channel ; ID DC: 20 A; Qgd (typ): 22 nC; RDS(on): 130@10V mOhm; VDSmax: 200 V
4-bit GTL to GTL buffer - Application: Low voltage to low voltage buffer ; Function: Non-Latched GTL Buffer ; GTL Drive: 40 mA; Number of bits: 4
22-bit bi-directional low voltage translator - Application: Voltage Translation ; Function: Open Drain Voltage Translation ; Number of bits: 22 ; Operating temperature: -40~85 Cel; Voltage Translation Range: 1.0 to 5.0 ~ 1.0 to 5.0 V
NPN/NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm - hFE max:>30 ; hFE min: 30 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: 2x NPN ; Ptot max: 200 mW; Resistor ratio: 1 ; VCEO max: 50 V
NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = open
PNP/PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 4.7 kOhm
Global Limit Switches Series GLS: Top Roller Arm, 2NC 2NO DPDT Snap Action, PF1/2
SS94 Series General Purpose Ratiometric Linear Sensor; Vdc supply voltage
DELUXE TEST LEAD KIT RoHS Compliant: NA
RES 1M-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA
RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA
N-channel TrenchMOS (tm) transistor - Configuration: Single N-channel ; ID DC: 20 A; Qgd (typ): 22 nC; RDS(on): 130@10V mOhm; VDSmax: 200 V
Low capacitance 7-fold bi-directional ESD protection diode arrays - Cd max.: 10 pF; IRM max: 0.025A; Number of protected lines: 7 ; PPP max: 35 W; VBR typ.: 7.6 V; VRWM: 5 V
Low capacitance bidirectional ESD protection diodes - Cd max.: 45 pF; IRM max: 0.1A; Number of protected lines: 1 ; PPP max: 130 W; VBR typ.: 0 V; VRWM: 5 V
PNP general purpose double transistor - Complement: PEMX1 ; fT min: 100 MHz; hFE max:>120 ; hFE min: 120 ; IC max: 100 mA; Polarity: 2x PNP ; Ptot max: 200 mW; VCEO max: 40 V
NPN/PNP general purpose transistors - fT min: 100 MHz; hFE max:>120 ; hFE min: 120 ; IC max: 100 mA; Polarity: NPN / PNP ; Ptot max: 200 mW; VCEO max: 40 V
Fivefold ESD protection diode arrays - Cd max.: 90 pF; IRM max: 0.015A; Number of protected lines: 5 ; PPP max: 200 W; VBR typ.: 18 V; VRWM: 15 V
NPN general purpose double transistor - Complement: PEMT1 ; fT min: 100 MHz; hFE max:>120 ; hFE min: 120 ; IC max: 100 mA; Polarity: 2x NPN ; Ptot max: 200 mW; VCEO max: 40 V
Ultra low capacitance double rail-to-rail ESD protection diode in a SOT143B package - Cd max.: 0 pF; IRM max: 0.1A; Number of protected lines: 2 ; PPP max: 0 W; VBR typ.: 0 V; VRWM: 3 V
SR Series Rocker Boot
4-channel I2C-bus switch with interrupt logic and reset - # of Addresses: 4 ; I2C-bus: 400 kHz; Inputs: 1 ; Interrupt: 4-1 ; Operating temperature: -40~85 Cel; Operating voltage: 2.3~5.5 VDC; Outputs: 4 ; Reset input pin: yes
Remote 16-bit I/O expander for Fm I2C-bus with reset
Schottky barrier single diodes - Cd max.: 2@VR=1V pF; Configuration: single ; IF max: 120 mA; IFSM max: 200 A; IR max: 0.5@VR=30VA; VFmax: 370@IF=1mA mV; VR max: 40 V
MULTI-STUD RING (A-1006-MS)
Wideband variable gain amplifier - Dual: yes ; GBW product: 850 MHz; Input noise: 2.5 pA/sqrt(Hz); Operating temperature: -40~85 Cel; PSRR: 45 mV/V; Single supply: 4.5 to 7 VDC
Circular Connector; MIL SPEC:MIL-DTL-38999 Series I; Body Material:Metal; Series:LJT; No. of Contacts:128; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight RoHS Compliant: No
Thyristor; logic level - IGT: 0.05 mA; IT (RMS): 0.8 A; VDRM: 200 V
Triacs - IGT: 50 mA; IT (RMS): 25 A; VDRM: 400 V
9-bit odd/even parity generator/checker - Description: 9-Bit Odd/Even Parity Generator/Checker ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: -1/ 20 mA ; Propagation delay: 7 ns; Voltage: 4.5-5.5 V
Circular Connector; MIL SPEC:MIL-DTL-38999 Series I; Body Material:Metal; Series:LJT; No. of Contacts:61; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight RoHS Compliant: No
Circular Connector; MIL SPEC:MIL-DTL-38999 Series I; Body Material:Metal; Series:LJT; No. of Contacts:29; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight RoHS Compliant: No
Circular Connector; MIL SPEC:MIL-DTL-38999 Series I; Body Material:Metal; Series:LJT; No. of Contacts:19; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight RoHS Compliant: No
Circular Connector; MIL SPEC:MIL-DTL-38999 Series I; Body Material:Aluminum; Series:LJT; No. of Contacts:61; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight RoHS Compliant: No
RES 1.6 OHM 3W 5% METAL OXIDE
ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80%
NPN/PNP general purpose transistors - fT min: 100 MHz; hFE max:>200 ; hFE min: 200 ; IC max: 500 mA; Polarity: NPN / PNP ; Ptot max: 300 mW; VCEO max: 12 V
Single Supply RS232C Line Driver/Receiver(?????μ?o?RS232C ?o?????????¨???2???2??????)
Hot swappable I2C and SMBus bus buffer - I2C-bus: 400 kHz; Inputs: 1 ; Operating temperature: -40~85 Cel; Operating voltage: 2.7~5.5 VDC; Outputs: 1
RING NYLAKRIMP FUNNEL ENTRY (F-966-38)
DIN Audio Connector; No. of Contacts:6; Contact Termination:Solder; Mounting Type:Cable; Gender:Male; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
Trenchmos (tm) Standard level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 35 nC; RDS(on): 15@10V mOhm; VDSmax: 110 V
Silicon Diffused Power Transistor - IC (DC): 12 A; IC (SAT): 6 A; tf(max): 0.15s; VCESM: 700 V
Double ESD protection diodes for transient overvoltage suppression
SS500 Series Latching Hall-Effect Sensor; SOT-89B surface mount packaget; available in 1,000/tape and reel
XA 16-bit microcontroller family 64K FLASH/2K RAM, watchdog, 2 UARTs
JT 42C 42#22 SKT RECP
N-channel Trenchmos (tm) logic level FET
8-bit 80C51 low power 8 kB flash microcontroller with 256 B RAM, 192 B data EEPROM
40 V, 200 mA PNP/PNP general-purpose double transistor
POT 1.0M OHM 1/4 SQ CERM SL MT
UHF wideband transistor - @ f1: 1000 ; @ f2: 2000 ; fT: 8 GHz; GUM @ f1: 14 dB; GUM @ f2: 8 dB; IC: 100 mA; Noise figure: 2@f21.3@f1 dB; Ptot: 365 mW; Polarity: NPN ; VCEO max: 10 V
NPN switching transistor - fT min: 500 MHz; hFE max: 120 ; hFE min: 40 ; IC max: 200 mA; Polarity: NPN ; Ptot max: 250 mW; toff: 30 ns; VCEO max: 15 V
Wideband variable gain amplifier - Amplifier type: Wideband variable gain ; Application: General-purpose/Linear ICs ; Function: Amplifiers ; Maximum power dissipation: 1100 Mw; Number of pins: 16 ; Operating temperature: -40~85 Cel; Vdd(max.): 5
DC-to-DC converter power train - Input voltage: 16 VDC; Operating frequency: 1 MHz; Output current: 25 A; Output voltage: 6 V 单芯位CMOS微机
Single-chip 16/32-bit microcontrollers; 32/64/128/256/512 kB ISP/IAP flash with 10-bit ADC and DAC 16/32位单片微控制器；32/64/128/256/512kB 支持0AD/DA转化的ISP/IAP闪存
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
Dual N-channel enhancement mode TrenchMOS (tm) transistor - Configuration: Dual N-channel ; I<sub>D</sub> DC: 3.4 A; R<sub>DS(on)</sub>: 100@10V200@4.5V mOhm; V<sub>DS</sub>max: 30 V 单芯位CMOS微机
Advanced LinCMOS(TM) Rail-To-Rail Output Wide-Input-Voltage Dual Operational Amplifier 8-SOIC -40 to 85 单芯位CMOS微机
8-channel analog multiplexer/demultiplexer 单芯位CMOS微机
JT 41C 41#20 SKT RECP 单芯位CMOS微机
NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 47 kOhm NPN配电阻型晶体R1=2.2千欧姆，R2=47千欧
Nexperia media processor 单芯位CMOS微机
SD MPEG-2 SoC 单芯位CMOS微机
RF CONNECTOR; SMA FEMALE BULKHEAD, SOLDER ATTACHMENT FOR PE-034SR (.034" SEMI-RIGID) 单芯位CMOS微机
1-of-8 decoder/demultiplexer - Description: 3-to-8 Line Decoder/Demultiplexer; Inverting ; Logic switching levels: TTL ; Number of pins: 16 ; Output drive capability: -1/ 20 mA ; Propagation delay: 6.1 ns; Voltage: 4.5-5.5 V 单芯位CMOS微机
Circular Connector; No. of Contacts:128; Series:LJT06R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:25-35 单芯位CMOS微机
CONN RCPT 46POS .100 DL STR PCB 单芯位CMOS微机
Digital satellite tuner RF IC 单芯位CMOS微机
RF CONNECTOR; SMA MALE, RIGHT ANGLE, SOLDER ATTACHMENT FOR PE-034SR (.034" SEMI-RIGID) 单芯位CMOS微机
PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 22 kOhm PNP配电阻型晶体管；R1=47千欧姆，R2=22千欧
PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 47 kOhm PNP配电阻型晶体管；R1=47千欧姆，R2=47千欧
PNP/PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = open 单芯位CMOS微机
MIFARE DESFire contactless multi-application IC 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
Flashless 16-bit/32-bit micro; Ethernet, CAN, ISP/IAP, USB 2.0 device/host/OTG, external memory interface 单芯位CMOS微机
Octal inverting buffer (3-state) - Description: Octal Buffer/Line Driver; Inverting (3-State) ; Logic switching levels: TTL ; Number of pins: 20 ; Output drive capability: -15/ 64 mA ; Propagation delay: 4.5 ns; Voltage: 4.5-5.5 V 单芯位CMOS微机
MCB2100 (Keil Evaluation Board) 单芯位CMOS微机
KS2106 (IAR Kickstart Board for LPC2104/5/6) 单芯位CMOS微机
phyCORE-ARM7/LPC2220 RDK (LPC2220 Rapid Development Kit) 单芯8位CMOS微机
MOSFET driver MOSFET驱动
4-bit asynchronous bus arbiter - Description: 4-Bit Asynchronous Bus Arbiter ; Logic switching levels: TTL ; Number of pins: 16 ; Output drive capability: -1/ 24 mA ; Propagation delay: 4.5 ns; Voltage: 4.5-5.5 V 单芯位CMOS微机
CONN HEADER 200POS .8MM DUAL SMD 单芯位CMOS微机
CONNECTOR ACCESSORY 连接器附
Advanced LinCMOS(TM) Rail-To-Rail Output Wide-Input-Voltage Dual Operational Amplifier 8-TSSOP -40 to 85 单芯位CMOS微机
Quad 2-input NAND 30Ohm driver - Description: 2-Input 30 Ohm Line Driver; Non-Inverting ; Logic switching levels: TTL ; Number of pins: 16 ; Output drive capability: -67/ 160 mA ; Propagation delay: 2 ns; Voltage: 4.5-5.5 V 单芯位CMOS微机
8-BIT SINGLE CHIP MICROCONTROLLERS 8位单晶片微控制器
5-channel I2C hub - I2C-bus: 400 kHz; Inputs: 1 ; Operating temperature: -40~85 Cel; Operating voltage: 3.0~3.6 VDC; Outputs: 4 单芯位CMOS微机
Circular Connector; No. of Contacts:55; Series:MS27472; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:16; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No 单芯位CMOS微机
Hot swappable I2C-bus and SMBus bus buffer - I2C-bus: 400 kHz; Inputs: 1 ; Operating temperature: -40~85 Cel; Operating voltage: 2.7~5.5 VDC; Outputs: 1 单芯位CMOS微机
1 A very low VF MEGA Schottky barrier rectifier 1安很低正向压降MEGA肖特基势垒整流器
32-Bit System-on-Chip 单芯位CMOS微机
IC LOGIC 244 OCTAL BUFFERS AND LINE DRIVERS WITH 3-STATE OUTPUTS -40 85C QSOP-20 55/TUBE 单芯位CMOS微机
Silicon temperature sensors 单芯位CMOS微机
2-to-1 I²C-bus master selector with interrupt logic and reset 单芯位CMOS微机
ULPI Hi-Speed USB transceiver 单芯位CMOS微机
DisplayPort protection 单芯位CMOS微机
32 kHz watch circuits with EEPROM 单芯位CMOS微机
Dual 14 bits DAC, up to 160 MHz, 2 x interpolating 单芯位CMOS微机
Gen1 Hex Display Multiplexer - Bandwidth: 2.7 Gbps ; Number of channels: 6 ; Operating temperature: -10~ 85 Cel; Standby current: 10 uA; Supply current: 0.2 mA; Supply voltage: 3.0~3.6 V 单芯位CMOS微机
Trenchmos (tm) Standard level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 75 A; Q<sub>gd</sub> (typ): 35 nC; R<sub>DS(on)</sub>: 15@10V mOhm; V<sub>DS</sub>max: 110 V
PLUG, D, IDC, 25WAY; Connector type:D Sub; Gender:Plug; Ways, No. of:25; Mating cycles, No. of:250; Termination method:IDC; Material, contact:Beryllium Copper; Plating, contact:Gold over Nickel; Material:Steel; Colour:Yellow; RoHS Compliant: Yes
Insulation Displacement (IDC) Connector; Leaded Process Compatible:No; No. of Positions:25; Peak Reflow Compatible (260 C):No; Body Material:Steel; Body Plating:Zinc; Contact Plating:Gold Flash Over Nickel RoHS Compliant: No
RING TERM LB AWG-22-18 # 6
SOCKET, D, IDC, 15WAY; Connector type:D Sub; Gender:Socket; Ways, No. of:15; Mating cycles, No. of:250; Termination method:IDC; Material, contact:Beryllium Copper; Plating, contact:Gold over Nickel; Material:Steel; Colour:Yellow; RoHS Compliant: Yes
POT 200K OHM 1/2 SQ CERM SL MT
Electrolytic Capacitor, Radial
CAN transceiver for 24 V systems
EPM900 (Keil Emulator)
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