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f-966-38 Datasheet PDF File

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				List of Unclassifed Manufacturers ETC
Part No.	THN6301U
OCR Text	... FEATURES o Low Noise Figure N.F = 1.1dB TYP. @ f=1GHz, VCE=8V, Ic=5mA o High Gain MAG = 17dB TYP. @ f=1GHz, VCE=8V, Ic=15mA o High Transit...966 0.493 / 147.402 0.509 / 142.995 0.521 / 138.933 0.531 / 135.199 0.558 / 130.314 0.562 / 124.563 ...
Description	NPN Planer RF TRANSISTOR
File Size	102.07K / 10 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	UPA811T-T1 UPA811 UPA811T PA811T
OCR Text	... * Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA 1 0.65 0.65 1.3 \|S21e\|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 ...966 2.779 2.640 2.532 2.504 2.427 2.350 2.305 2.210 2.152 2.101 2.034 1.987 S21 ANG 172.0 165.9 156....
Description	Low Noise, High Frequncy Amplifer NPN Transistor(楂??浣??澹版?澶у?NPN?朵?绠? HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD Low Noise, High Frequncy Amplifer NPN Transistor(高频低噪声放大器NPN晶体
File Size	47.81K / 6 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	UPA812T-T1 UPA812 UPA812T UPA812TGB-T1 PA812T
OCR Text	... * Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA 0.65 0.65 * High Gain 1.3 \|S21e\|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 ...966 0.947 0.878 0.866 0.833 0.809 0.767 0.704 0.659 0.630 0.609 0.582 0.562 0.547 0.549 0.548 0.536 ...
Description	Low Noise, High Frequncy Amplifer NPN Transistor(楂??浣??澹版?澶у?NPN?朵?绠? Low Noise, High Frequncy Amplifer NPN Transistor(高频低噪声放大器NPN晶体 HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD TRANSISTOR \| BJT \| PAIR \| NPN \| 10V V(BR)CEO \| 65MA I(C) \| SOT-363
File Size	48.72K / 6 Page	View it Online	Download Datasheet

				Duracell NEC Corp. NEC[NEC]
Part No.	NE722S01 NE722S01-T NE722S01-T1B1 NE722S01-T1
OCR Text	f = 12 GHz * OUTPUT POWER (at 1 dB compression): 15 dB TYP at f = 12 GHz * LOW NOISE/HIGH GAIN: NF = 0.9 dB TYP, Ga = 12 dB TYP at f = 4 GHz...966 0.893 0.839 0.777 0.714 0.676 0.624 S21 ANG 136.2 124.9 113.9 103.7 94.2 85.3 76.6 67.9 59.4 50....
Description	NECs C TO X BAND N-CHANNEL GaAs MES FET
File Size	126.38K / 6 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	1N964B 1N991B 1N957B 1N957B_04 1N958B 1N959B 1N960B 1N961B 1N962B 1N963B 1N965B 1N966B 1N967B 1N968B 1N969B 1N970B 1N971B 1N972B 1N973B 1N974B 1N975B 1N976B 1N977B 1N978B 1N979B 1N980B 1N981B 1N982B 1N983B 1N984B 1N985B 1N986B 1N987B 1N988B 1N989B 1N990B 1N958BTR 1N958BT50A 1N958BT50R 1N960BTR 1N960BT50A 1N960BT50R 1N957BT50A 1N957BT50R 1N966BTR 1N966BT50A 1N966BT50R 1N967BS62Z 1N967BT50A 1N967BT50R 1N969BT50R 1N969BT50A 1N963BT50A 1N963BT50R 1N961BTR 1N973BT50A 1N973BT50R 1N965BTR 1N965BT50A 1N965BT50R 1N957B04
OCR Text	...Mark Information (Continued) F 1st line: F - Fairchild Logo 2nd line: Device Name - 3rd to 5th characters of the device name. or 4th to 6th characters for BZXyy series 3rd line: Device Name - 6th to 7th characters of the device name. ...
Description	15V, 0.5W Zener Diode 33V, 0.5W Zener Diode 10V, 0.5W Zener Diode 12V, 0.5W Zener Diode 22V, 0.5W Zener Diode 18V, 0.5W Zener Diode 16V, 0.5W Zener Diode 6.8V, 0.5W Zener Diode 9.1V, 0.5W Zener Diode 7.5V, 0.5W Zener Diode Half Watt Zeners Zeners General Purpose Diodes
File Size	44.63K / 5 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	2SC5504
OCR Text	...es * Low noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). * High gain : S21e2=11dB typ (f=1GHz). * High cutoff frequency : fT=11GH...966 0.932 0.882 0.823 0.792 0.720 0.656 0.621 0.568 0.530 S11 -8.6 -16.3 -31.8 -47.5 -63.1 -74.7 -9...
Description	NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier Applications NPN Epitaxial Planar Silicon Transistors
File Size	43.83K / 6 Page	View it Online	Download Datasheet

				NEC
Part No.	UPC8181TB UPC8181TB-E3
OCR Text	...POWER GAIN: GP = 19.0 dB TYP at f = 0.9 GHz GP = 21.0 dB TYP at f = 1.9 GHz GP = 22.0 dB TYP at f = 2.4 GHz * MEDIUM OUTPUT POWER: PO(1dB) =...966 13.410 13.722 14.151 14.412 14.747 15.144 15.463 15.264 15.137 14.774 14.176 13.710 12.808 12.31...
Description	3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS
File Size	63.46K / 7 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	SD57060-01 TSD57060-01
OCR Text	...DS = 28 V VDS = 28 V VDS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 2.5 88 44 2.8 REF. 7145649B Min. 65 Typ . Max. Un it V A A V V mh...966 0.971 0.974 0.977 0.979 0.981 0.982 0.983 0.983 0.983 0.984 0.984 0.985 s22 ang -170.27 -170....
Description	RF POWER TRANSISTORS The LdmoSTFAMILY
File Size	70.65K / 8 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	SD57060 TSD57060
OCR Text	...DS = 28 V VDS = 28 V VDS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 2.5 88 44 1.7 REF. 7143417B Min. 65 Typ . Max. Un it V A A V V mh...966 0.971 0.974 0.977 0.979 0.981 0.982 0.983 0.983 0.983 0.984 0.984 0.985 s22 ang -170.27 -170....
Description	RF POWER TRANSISTORS The LdmoSTFAMILY
File Size	72.01K / 8 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC4703 2SC4703NE46234 2SC4703SH
OCR Text	...V, IC = 5 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 50 mA, f = 1 GHz VCE = 10 V, IC = 20 mA, f = 1 GHz VCE = 5 V, IC = 50 mA, f = 1 GH...966 1.788 1.721 1.620 1.669 1.491 S21 10V 100mA S12 ANG 125.5 108.0 97.2 88.0 83.6 79.1 75.7 68....
Description	MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MICROWAVE LOW NOISE LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MICROWAVE LOW NOISE/ LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits BJT
File Size	64.23K / 8 Page	View it Online	Download Datasheet

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