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				MAXIM - Dallas Semiconductor Dallas Semiconducotr
Part No.	DS1314
OCR Text	...ds precise voltage detection at extremely low battery consumption. 1 of 11 111999 DS1314 In addition to battery-backup support, the DS1314 performs the important function of monitoring the remaining capacity of the lithium battery and...
Description	3V Nonvolatile Controller with Lithium Battery Monitor
File Size	199.72K / 11 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDS6680S
OCR Text	...rformance trench technology for extremely low RDS(ON) and fast switching High power and current handling capability Applications * DC/DC converter * Motor drives * D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 A...
Description	30V N-Channel PowerTrench SyncFET⑩
File Size	220.76K / 9 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	HCPL-0710 HCPL-0710500
OCR Text	...ut The HCPL-0710 optocoupler is extremely easy to use. No external interface circuitry is required because the HCPL-0710 uses high-speed CMO...low to high (tPLH) is the amount of time required for an input signal to propagate to the output, ca...
Description	40 ns Prop. Delay, SO-8 Optocoupler
File Size	269.02K / 16 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	ICM7170 ICM7170AIBG ICM7170AIDG ICM7170AIPG ICM7170AMDG ICM7170IBG ICM7170IDG ICM7170IPG ICM7170MDG
OCR Text	...the onchip command register. An extremely stable oscillator frequency is achieved through the use of an on-chip regulated power supply. The ...low power consumption. Internal latches prevent clock roll-over during a read cycle. Counter data is...
Description	Microprocessor-Compatible, Real-Time Clock
File Size	77.04K / 13 Page	View it Online	Download Datasheet

				Integrated Device Technology, Inc. IDT[Integrated Device Technology]
Part No.	IDT71342SA20J IDT71342SA20PF IDT71342SA25J IDT71342SA25PF IDT71342SA35J IDT71342SA35PF IDT71342SA45J IDT71342SA45PF IDT71342SA55J IDT71342SA55PF IDT71342SA70J IDT71342SA70PF IDT71342LA70PF IDT71342SA IDT7134 IDT71342LA70J IDT71342LA55J IDT71342LA55PF IDT71342LA35J IDT71342LA35PF IDT71342 IDT71342LA IDT71342LA20J IDT71342LA20PF IDT71342LA25J IDT71342LA25PF IDT71342LA45J IDT71342LA45PF
OCR Text	...ESCRIPTION: The IDT71342 is an extremely high-speed 4K x 8 Dual-Port Static RAM with full on-chip hardware support of semaphore signalling ...low standby power mode (both CE and SEM High). Fabricated using IDT's CMOS high-performance technolo...
Description	HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM WITH SEMAPHORE 高K的8双端口静态RAM的信号量 HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM WITH SEMAPHORE 4K X 8 DUAL-PORT SRAM, 45 ns, PQFP64 350V N-Channel MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail 500V N-Channel MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail
File Size	144.80K / 13 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text	...rocessing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extr...
Description	60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?
File Size	122.02K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1010E
OCR Text	...rocessing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extr...
Description	Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?
File Size	143.91K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text	...rocessing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extr...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-262 package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?
File Size	144.82K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010N
OCR Text	...rocessing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extr...
Description	Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?) Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)
File Size	154.40K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010Z IRF1010ZL IRF1010ZS
OCR Text	...rocessing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combin...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET
File Size	298.51K / 12 Page	View it Online	Download Datasheet

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