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  diode-24v Datasheet PDF File

For diode-24v Found Datasheets File :: 8273    Search Time::1.797ms    
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    VND1NV04 VNN1NV04 VNS1NV04 VNS1NV0413TR VND1NV0413TR VNN1NV0413TR VND1NV04-1

ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
http://
Part No. VND1NV04 VNN1NV04 VNS1NV04 VNS1NV0413TR VND1NV0413TR VNN1NV0413TR VND1NV04-1
OCR Text ... s s s s A/s nC SOURCE DRAIN DIODE Symbol VSD (*) trr Qrr IRRM Parameter Forward On Voltage Reverse Recovery Time Reverse Recovery Charg...24V VIN=5V; Rgen=RIN MIN=330; L=50mH (see figures 3 & 4) 15 20 (**) Pulsed: Pulse duration ...
Description "OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET
OMNIFET II FULLY AUTOPROTECTED POWER MOSFET
OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
“OMNIFET II? FULLY AUTOPROTECTED POWER MOSFET

File Size 390.95K  /  18 Page

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    VNS1NV04D VNS1NV04D13TR VNS1NV04D-E

http://
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. VNS1NV04D VNS1NV04D13TR VNS1NV04D-E
OCR Text ... s s s s A/s nC SOURCE DRAIN DIODE Symbol VSD (*) trr Qrr IRRM Parameter Forward On Voltage Reverse Recovery Time Reverse Recovery Charg...24V VIN=5V Rgen=RIN MINn=330; L=50mH (see figures 3 & 4) 15 20 (*) Pulsed: Pulse duration =...
Description “OMNIFET II? FULLY AUTOPROTECTED POWER MOSFET
OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
"OMNIFET II": FULLY AUTOPROTECTED POWER MOSFET

File Size 242.99K  /  14 Page

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    CA3273

INTERSIL[Intersil Corporation]
Part No. CA3273
OCR Text ...t, the use of an external zener diode of 35V or less between supply and load terminals may be required to prevent damage due to severe condi...24V Max. Positive Output Peak Pulse, VSW Open . . . . . . . . . .VCC +12V Max. Operating Output Load...
Description High-Side Driver

File Size 23.84K  /  4 Page

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    FAN5236QSC FAN5236QSCX FAN5236MTC FAN5236MTCX FAN5236

FAIRCHILD[Fairchild Semiconductor]
Part No. FAN5236QSC FAN5236QSCX FAN5236MTC FAN5236MTCX FAN5236
OCR Text ...stor 1.5K, 1% Resistor Schottky Diode 30V Inductor 6.4H, 6A, 8.64m Inductor 0.8H, 6A, 2.24m Dual MOSFET with Schottky DDR Controller Qty ...24V 14 VIN BOOT1 C1 D1 +5 C5 L1 6 C9 +5 C4 R2 VCC 28 Q1A 5 ILIM1 EN1 SS1 11 8 1...
Description Dual Mobile-Friendly DDR / Dual-output PWM Controller

File Size 196.28K  /  20 Page

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    IRF7389 IRF7389TR

IRF[International Rectifier]
Part No. IRF7389 IRF7389TR
OCR Text ...rent Continuous Source Current (Diode Conduction) TA = 25C Maximum Power Dissipation TA = 70C Single Pulse Avalanche Energy Avalanche Curre...24V, V GS = 0V VDS = -24V, VGS = 0V VDS = 24V, VGS = 0V, T J = 55C VDS = -24V, V GS = 0V, TJ = 55C V...
Description Generation v technology
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

File Size 210.72K  /  10 Page

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    IRF7403 IRF7403TRPBF

IRF[International Rectifier]
Part No. IRF7403 IRF7403TRPBF
OCR Text ...tor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. 9.7 8.5 5.4 34 2.5 0.02 20 5.0 -55 to ...24V, VGS = 0V A 25 VDS = 24V, VGS = 0V, TJ = 125C 100 V GS = 20V nA -100 VGS = -20V 57 ID = 4.0A 6.8...
Description Generation V Technology
Power MOSFET

File Size 112.84K  /  9 Page

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    ZXM61N03F ZXM61N03FTA ZXM61N03FTC

ZETEX[Zetex Semiconductors]
Part No. ZXM61N03F ZXM61N03FTA ZXM61N03FTC
OCR Text ...Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) Power Dissipation at T A=25C (a) Linear Derating Factor Power ...24V,V GS=10V, I D =0.91A (refer to test circuit) V DD =15V, I D=0.91A R G=6.2, R D=16 (refer to test...
Description N-channel MOSFET
30V N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 215.61K  /  7 Page

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    ZXM61P03 ZXM61P03F ZXM61P03FTA ZXM61P03FTC

ZETEX[Zetex Semiconductors]
Part No. ZXM61P03 ZXM61P03F ZXM61P03FTA ZXM61P03FTC
OCR Text ...Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T A=25C (a) Linear Derating Factor Powe...24V,V GS=-10V, I D =-0.6A (Refer to test circuit) V DD =-15V, I D=-0.6A R G=6.2, R D=25 (Refer to te...
Description P-channel MOSFET
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Circular Connector; No. of Contacts:23; Series:; Body Material:Aluminum; Connector Shell Size:16; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:16-99; MIL SPEC:MIL-C-26482 Series I RoHS Compliant: No

File Size 228.84K  /  7 Page

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    ZXM62N03E6 ZXM62N03E6TA ZXM62N03E6TC

ZETEX[Zetex Semiconductors]
Part No. ZXM62N03E6 ZXM62N03E6TA ZXM62N03E6TC
OCR Text ...Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) Power Dissipation at T A=25C (a) Linear Derating Factor Power ...24V,V GS=10V, I D =2.2A (refer to test circuit) V DD =15V, I D=2.2A R G=6.0, R D=6.7 (refer to test ...
Description N-channel MOSFET-Not recommended for new designs
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3122; No. of Contacts:11; Connector Shell Size:18; Connecting Termination:Crimp; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No

File Size 186.91K  /  7 Page

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    ZXM62P03E6 ZXM62P03E6TA ZXM62P03E6TC

ZETEX[Zetex Semiconductors]
Part No. ZXM62P03E6 ZXM62P03E6TA ZXM62P03E6TC
OCR Text ...Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T A=25C (a) Linear Derating Factor Powe...24V,V GS=-10V, I D =-1.6A (Refer to test circuit) V DD =-15V, I D=-1.6A R G=6.2, R D=25 (Refer to te...
Description P-channel MOSFET
30V P-CHANNEL ENHANCEMENT MODE MOSFET

File Size 204.43K  /  7 Page

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For diode-24v Found Datasheets File :: 8273    Search Time::1.797ms    
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